Semiconductor Energy Laboratory Co., Ltd.

Takashi Inuzima

Shunpei Yamazaki

Mitsunori Sakama

Takeshi Fukada

Naoya Sakamoto

Nobumitsu Amachi

Hisato Shinohara

Toru Takayama

Shigenori Hayashi

Naoki Hirose

Seiichi Odaka

An improved image sensor is described. The sensor includes a photosensitive semiconductor device comprises a glass substrate, a light blocking electrode formed on the glass substrate, a photosensitive semiconductor film formed on the electrode, a transparent electrode. A light window is opened through the semiconductor device. On the light path including the light window, an uneven interface is formed in order that light rays incident on the sensor is modified and reachs the photosensitive semiconductor after reflection on an original.

Contact image sensor having light-receiving windows

Photosensitive semiconductor contact image sensor

An improved CVD apparatus for depositing a uniform film is shown. The apparatus comprises a reaction chamber, a substrate holder and a plurality of light source for photo CVD or a pair of electrode for plasma CVD. The substrate holder is a cylindrical cart which is encircled by the light sources, and which is rotated around its axis by a driving device. With this configuration, the substrates mounted on the cart and the surroundings can be energized by light or plasma evenly throughout the surfaces to be coated.

Method of depositing films using photo-CVD with chamber plasma cleaning

Growing community of inventors

Atsugi, Japan

Takashi Inuzima