Kabushiki Kaisha Toshiba

Canon Kabushiki Kaisha

Toshiba Memory Corporation

Other

Kioxia Corporation

Takashi Imoto

Chiaki Takubo

Yuusuke Takano

Takeshi Watanabe

Ryuji Hosokawa

Soichi Homma

Katsunori Shibuya

Takao Sato

Tetsuya Kurosawa

Yoshihisa Imori

Mika Kiritani

Hideto Furuyama

Takashi Yamazaki

Hiroshi Hamasaki

Yoshiaki Goto

Hideo Numata

Mitsuyoshi Endo

Katsuhiko Oyama

Jun Tanaka

Tsutomu Takahashi

Masao Maeda

Tetsuya Kawanabe

Naohisa Okumura

Kazuya Sakamoto

Hideki Honda

Nobuo Onuma

Kazuhisa Ebuchi

Takayuki Fujita

Akira Tanimoto

Katsuhiro Ishida

Mikio Shiga

Mikio Matsui

Nobuhiro Saito

Naoto Takebe

Shunichi Kunihiro

Hiroshi Maruoka

Yoriyasu Ando

Yuichi Sano

Yusuke Akada

Masaji Iwamoto

Yasushi Kumagai

Hiroshi Shimoe

Naoki Iwamasa

Koichi Miyashita

Masatoshi Kawato

Yusuke Dohmae

Tomomi Honda

Yuji Karakane

Yoshinori Okayama

Akihiko Yanagida

Masashi Noda

According to one embodiment, a semiconductor device includes a wiring board that has a first surface and a second surface opposed to the first surface, a semiconductor chip provided on the first surface, external connection terminals provided on the second surface, a sealing resin layer provided on the first surface, and a conductive shield layer that covers at least a portion of a side surface of the wiring board and the sealing resin layer. The wiring board includes a first ground wire that is electrically connected to the conductive shield layer, and a second ground wire that is electrically connected to the conductive shield layer and is electrically insulated from the first ground wire.

Semiconductor device and method of inspecting the same

According to one embodiment, a method of manufacturing a semiconductor device includes forming a sealing resin layer containing an inorganic filler so as to seal a semiconductor chip, removing a portion of the surface of the sealing resin layer by dry etching such that a portion of the inorganic filler is exposed, and forming a shield layer so as to cover at least the sealing resin layer.

Method of manufacturing semiconductor device and semiconductor device

A semiconductor manufacturing device has an upper cover configured to be arranged above top surface of unshielded semiconductor device which are mounted on a tray placed on a carrier to go through electromagnetic shielding, and a displacement detector configured to detect an abnormality when the upper cover is raised by at least one of the semiconductor device which is brought into contact with a bottom surface of the upper cover.

Semiconductor manufacturing device and semiconductor manufacturing method

A semiconductor manufacturing device has a conveyor configured to convey a tray having an unshielded semiconductor device mounted thereon to go through electromagnetic shielding, and a controller configured to control the conveyor. The controller performs control to take out the tray from a tray supply storage storing trays each having an unshielded semiconductor device mounted thereon to go through the electromagnetic shielding, place the tray on a carrier, and convey this carrier to a sputtering device which coats the unshielded semiconductor device with a sputtering material for the electromagnetic shielding, and the controller performs control to take out, from the sputtering device, the carrier having the tray placed thereon with an electromagnetically shielded semiconductor device being mounted on the tray, convey the tray, pick up the tray having the electromagnetically shielded semiconductor device mounted thereon from the carrier, and store the tray in the tray supply storage.

A semiconductor device includes a conductive shield layer that has a first portion covering a surface of a sealing resin layer and a second portion covering side surfaces of the sealing resin layer and side surfaces of the substrate. Portions of wiring layers, including a grounding wire, on or in the substrate have cut planes which are exposed to the side surfaces of the substrate and spread out in a thickness direction of the substrate. A cut plane of the grounding wire is electrically connected to the shield layer. An area of the cut plane of the grounding wire is larger than an area of a cross section of the grounding wire parallel to, and inward of the substrate from, the cut plane of the grounding wire.

Semiconductor device and method of manufacturing semiconductor device

An information processing apparatus and method includes determining whether print data is limited in a number of times of printing, determining whether a setting of storing the print data in the information processing apparatus is valid, and stopping transmission of the print data in a case where it is determined that the print data is limited in the number of times of printing and it is determined that the setting is valid.

Information processing apparatus, information processing method, and storage medium

In a manufacturing method of a semiconductor device according to an embodiment, a plurality of semiconductor packages each including a semiconductor chip mounted on a wiring board and a sealing resin layer as objects to be processed, and a tray including a plurality of housing parts are prepared. A depressed portion having a non-penetrating shape or a penetrating shape is formed in the housing part. The semiconductor packages are disposed in the plural housing parts respectively. By sputtering a metal material on the semiconductor package housed in the tray, a conductive shield layer is formed.

Manufacturing method of a conductive shield layer in semiconductor device

In one embodiment, a semiconductor device includes a first semiconductor chip disposed on a circuit board, an adhesive layer fixing the first semiconductor chip to the circuit board, and a second semiconductor chip having an outer shape smaller than that of the first semiconductor chip. At least a part of the second semiconductor chip is embedded in the adhesive layer. The adhesive layer has a thickness in a range of 95 to 150 &#x3bc;m. The adhesive layer includes a cured product of a thermosetting resin whose thermal time viscosity at a time that the second semiconductor chip is embedded is in a range of 500 to 5000 Pa&#xb7;s.

Semiconductor device and method for manufacturing the same

According to one embodiment, a semiconductor device includes a first semiconductor element, a first electrode, a ball part, a second electrode, and a wire. The first electrode is electrically connected to the first semiconductor element. The ball part is provided on the first electrode. The wire connects the ball part and the second electrode. A thickness of a turned-back portion at an end of the wire on a side opposite to the second electrode is smaller than a diameter of the wire.

Semiconductor device, method for manufacturing semiconductor device, and manufacturing apparatus for semiconductor device

There is disclosed a semiconductor device comprising at least one semiconductor element, one chip mounting base being provided at least one first interconnection on one major surface thereof and at least one second interconnection on the other major surface thereof, and the semiconductor element being electrically connected to at least the one first interconnection and mounted on the one major surface, a sealing member being provided on the one major surface of the chip mounting base and covering the semiconductor element and the first interconnection, at least one third interconnection being provided on a surface of the sealing member, and at least one fourth interconnection being provided in the sealing member and the chip mounting base, and electrically connected to the first interconnection, the second interconnection, and the third interconnection.

Semiconductor device and manufacturing method therefor

A semiconductor device is disclosed, which comprises a semiconductor element in which a laminated film composed of a plurality of layers including an insulating film is formed on a surface of a semiconductor substrate, and a portion of the laminated film is removed from the surface of the semiconductor substrate so that the semiconductor substrate is exposed at the portion, a mounting substrate on which the semiconductor element is mounted, and a resin layer which seals at least a surface side of the semiconductor element with resin.

Semiconductor device package having a semiconductor element with a roughened surface

Information related to ink mounted to a printer that performs printing is acquired, and information for designating a type of ink that has been set to be used in printing by the printer is acquired. Based on the set type of ink and acquired information, it is determined whether or not the printer can print with a type of ink other than the set type of ink to be used. If it is determined that the printing is possible, displaying is executed to have a user confirm the set type of ink.

Print control apparatus, print control method thereof, control program, printer driver, printer, and computer readable storage medium

A mechanism for executing an optimum cancelling method from among a plurality of cancelling methods for many various print environments in a user's environment. The mechanism obtains limitation information of the cancellation and determines a the optimum cancelling method among the plurality of cancelling methods. The mechanism then executes the determined optimum cancelling method.

Information processing apparatus, job processing method and program, and computer-readable memory medium

Method of fabricating a semiconductor device package having a semiconductor element with a roughened surface

Growing community of inventors

Yokohama, Japan

Takashi Imoto