Matsushita Electric Industrial Co., Ltd.

Takashi Iguchi

Gen Itakura

Masakazu Tanahashi

Emiko Igaki

Hideyuki Okinaka

Keiichi Nakao

Takayuki Kuroda

Hideki Kuramitsu

Yasutaka Horibe

Akira Ohmi

Hikoji Okuyama

Yoshiyuki Miura

Masahiro Katoh

Yoichi Okinaka

Kaneomi Nagase

The invention relates to a method of laminating ceramic greenware sheets with electrodes embedded therein ( ) which is formed on a support by pressure-adhering a ceramic greenware sheet with an electrode embedded therein onto a second ceramic greenware sheet or other electrodes ( ), then peeling off the support alone and transferring the ceramic greenware sheet with the embedded electrodes onto the second ceramic greenware sheet or the other electrodes. This manufacturing method enables it to laminate ceramic greenware sheets each the thickness of which is as thin as 20 micrometers or less, while maintaining their mechanical strength and embedded electrodes in the ceramic greenware sheets, thereby enabling it to prevent a occurrence of surface irregularities due to the thickness of the electrodes even when laminating to a high degree.

Method for manufacturing laminated-ceramic electronic components

A method of manufacturing a ceramic electronic part includes the steps of: firing Pd electrodes or alloy electrodes containing Pd as a primary metal along with ceramics in the atmosphere in which Pd cannot be oxidized within the range (I) of oxidizing temperature of Pd in air; and firing the Pd electrodes or alloy electrodes along with the ceramics in air within the range (II) of deoxidizing temperature of PdO in air. The method can manufacture a ceramic electronic part, such as a multilayer ceramic capacitor, including Pd electrodes or alloy electrodes which contain Pd as a primary metal without forming internal defects inside the ceramic electronic part and reducing its properties.

Method of manufacturing a ceramic electronic part

Ceramic high dielectric composition

A composition consisting of 5 to 95 mol% of bismuth oxide (Bi.sub.2 O.sub.3) and 95 to 5 mol% of copper oxide (Cu.sub.2 O), or a composition consisting of 50 to 95 mol% of copper oxide (Cu.sub.2 O) and 50 to 5 mol% of manganese dioxide (MnO.sub.2), or a composition consisting of 5 to 95 mol% of bismuth oxide (Bi.sub.2 O.sub.3) and 95 to 5 mol% of manganese dioxide (MnO.sub.2), is thermally diffused in the grain boundaries of semiconductor ceramics composed mainly of strontium titanate (SrTiO.sub.3) to form highly insulating layers in the grain boundaries to thereby provide semiconductive ceramics wherein the rate of change of dielectric constant with temperature as well as the dielectric loss (tan .delta.) are smaller than in the conventional barium titanate type semiconductor products. Further, the insulation resistance is higher than in the conventional product.

Semiconductive ceramics

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Chitose, Japan

Takashi Iguchi