Semiconductor Energy Laboratory Co., Ltd.

Sharp Kabushiki Kaisha Corporation

Takashi Ienaga

Hidekazu Miyairi

Tetsuhiro Tanaka

Yasuhiro Jinbo

Ryota Tajima

Yoshitaka Yamamoto

Masao Moriguchi

Ryu Komatsu

Kanta Abe

Yosuke Kanzaki

Erika Kato

Provided is a method for manufacturing a semiconductor device, in which a degradation of characteristics of a thin film transistor can be suppressed by performing plasma oxidation treatment on a gate insulating film containing nitrogen. An embodiment of the present invention is a method for manufacturing a semiconductor device comprising a thin film transistor including a gate electrode, a gate insulating film containing nitrogen, and a channel region in microcrystalline semiconductor films. The method includes the steps of performing plasma treatment on the gate insulating film in an oxidizing gas atmosphere containing hydrogen and an oxidizing gas containing an oxygen atom, and forming the microcrystalline semiconductor film over the gate insulating film. Formula (1), a/b&#x2267;2, and Formula (2), b&#x3e;0, are satisfied, where the amount of hydrogen and the amount of the oxidizing gas in the oxidizing gas atmosphere are a and b, respectively.

Method for manufacturing semiconductor device and plasma oxidation treatment method

An embodiment of the present invention is a microcrystalline semiconductor film having a thickness of more than or equal to 70 nm and less than or equal to 100 nm and including a crystal grain partly projecting from a surface of the microcrystalline semiconductor film. The crystal grain has an orientation plane and includes a crystallite having a size of 13 nm or more. Further, the film density of the microcrystalline semiconductor film is higher than or equal to 2.25 g/cmand lower than or equal to 2.35 g/cm, preferably higher than or equal to 2.30 g/cmand lower than or equal to 2.33 g/cm.

Microcrystalline semiconductor film, method for manufacturing the same, and method for manufacturing semiconductor device

An object is to provide a manufacturing method of a microcrystalline silicon film with improved adhesion between an insulating film and the microcrystalline silicon film. The microcrystalline silicon film is formed in the following manner. Over an insulating film, a microcrystalline silicon grain having a height that allows the microcrystalline silicon grain to be completely oxidized by later plasma oxidation (e.g., a height greater than 0 nm and less than or equal to 5 nm), or a microcrystalline silicon film or an amorphous silicon film having a thickness that allows the microcrystalline silicon film or the amorphous silicon film to be completely oxidized by later plasma oxidation (e.g., a thickness greater than 0 nm and less than or equal to 5 nm) is formed. Plasma treatment in an atmosphere including oxygen or plasma oxidation is performed on the microcrystalline silicon grain, the microcrystalline silicon film, or the amorphous silicon film, so that a silicon oxide grain or a silicon oxide film is formed over the insulating film. A microcrystalline silicon film is formed over the silicon oxide grain or the silicon oxide film.

Manufacturing method of microcrystalline silicon film and manufacturing method of thin film transistor

Growing community of inventors

Oume, Japan

Takashi Ienaga