Panasonic Corporation

Panasonic Intellectual Property Management Co., Ltd.

Matsushita Electric Industrial Co., Ltd.

Takashi Ichiryu

Seiichi Nakatani

Koichi Hirano

Seiji Karashima

Yoshihisa Yamashita

Yoshihiro Tomita

Yusuke Kinoshita

Masanori Nomura

Hidetoshi Ishida

Toshio Fujii

Takashi Kitae

Koji Kawakita

Toshiyuki Asahi

Satoru Tomekawa

Hiroki Yabe

Yasuhiro Yamada

Shingo Komatsu

Tousaku Nishiyama

Takeshi Nakayama

Osamu Shibata

Yoshiyuki Saito

Takeshi Suzuki

Tatsuo Ogawa

Susumu Sawada

Ryusuke Kanomata

Yasuhiro Sugaya

Hidekazu Umeda

A gate drive circuit includes: an input terminal; a first circuit path inserted into a line connecting the input terminal and a gate of a power transistor; a second circuit path connected in parallel to the first circuit path; and a third circuit path connected in parallel to the second circuit path. The first circuit path includes a gate resistor (Rgon). The second circuit path includes a first capacitor and a first resistor connected in series. The third circuit path includes a second capacitor and a second resistor connected in series. The second capacitor has a capacitance value greater than a capacitance value of the first capacitor. The second resistor has a resistance value greater than a resistance value of the first resistor. The gate resistor (Rgon) has a resistance value greater than the resistance value of the second resistor.

Gate drive circuit, and semiconductor breaker

A bidirectional switch module includes a plurality of bidirectional switches and a mount board. Each of the plurality of bidirectional switches includes a first source electrode, a first gate electrode, a second gate electrode, and a second source electrode. On the mount board, the plurality of bidirectional switches are mounted. In the bidirectional switch module, the plurality of bidirectional switches are connected in parallel.

Bidirectional switch module and bidirectional switch

A GaN layer is formed over the substrate. An AlGaN layer is formed on the GaN layer. A first source electrode, a first gate electrode, a second gate electrode, and a second source electrode are formed on or over the AlGaN layer. A first p-type AlGaN layer where 0≤x1<1 is interposed between the first gate electrode and the AlGaN layer. A second p-type AlGaN layer where 0≤x2<1 is interposed between the second gate electrode and the AlGaN layer. The substrate is electrically insulated from all of the first source electrode, the second source electrode, the first gate electrode, and the second gate electrode. The bidirectional switch further includes a terminal used to connect the substrate to a fixed potential node. The terminal is connected to the substrate.

Bidirectional switch, electrical device, and multi-level inverter

A speed-up circuit is configured to be provided between a power supply terminal and a gate of a semiconductor switching element. An impedance element is configured to be provided between a signal input terminal and a node, the node being between the speed-up circuit and the gate of the semiconductor switching element. In the speed-up circuit, a second field effect transistor is connected in series to a first field effect transistor and is configured to be connected to the gate of the semiconductor switching element. The impedance element has an impedance higher than an impedance of the speed-up circuit when both the first field effect transistor and the second field effect transistor are in an ON state.

Driver circuit and switch system

A semiconductor device includes a supporting substrate, a semiconductor chip, a resin member, and a heat-dissipating metal layer. The supporting substrate has a first surface and a second surface located opposite from each other in a thickness direction defined for the supporting substrate. The semiconductor chip includes a plurality of electrodes. The semiconductor chip is bonded to the supporting substrate on one side thereof with the first surface. The resin member has a first surface and a second surface located opposite from each other in a thickness direction defined for the resin member. The resin member covers at least a side surface of the supporting substrate and a side surface of the semiconductor chip. The heat-dissipating metal layer is arranged in contact with the supporting substrate and the resin member to cover the second surface of the supporting substrate and the second surface of the resin member at least partially.

Semiconductor device including heat-dissipating metal multilayer having different thermal conductivity, and method for manufacturing same

A bidirectional switch includes: a first lateral transistor including a first semiconductor layer on the surface of a first conductive layer; a second lateral transistor including a second semiconductor layer on the surface of a second conductive layer; a connection member; a first conductor member; and a second conductor member. The connection member connects the first lateral transistor and the second lateral transistor together in anti-series. The first conductor member electrically connects the first source electrode of the first lateral transistor to the first conductive layer. The second conductor member electrically connects the second source electrode of the second lateral transistor to the second conductive layer.

Bidirectional switch and bidirectional switch device including the switch

A flexible touch sensor comprises: a first sheet material that has a first major surface, and that has a cushioning property; a second sheet material that includes a conductive material, and that is disposed on the first major surface of the first sheet material; and a conductive wire that is disposed on the first major surface of the first sheet material, and that is sunk into the first sheet material.

Flexible touch sensor and method of manufacturing the same

An electronic component package includes: a sealing resin layer; a metal member buried therein and including a die bond portion and a terminal electrode portion located outside the die bond portion; a ceramic substrate buried in the sealing resin layer; and an electronic component disposed on the die bond portion. When viewed in plan, the die bond portion and the ceramic substrate are partially overlapped to be in contact with each other, and the terminal electrode portion and the ceramic substrate are partially overlapped to be in contact with each other. The electronic component is electrically connected to the terminal electrode portion. The metal member includes a first plating layer and a second plating layer, and the average crystal grain diameter of the first plating layer is smaller than the average crystal grain diameter of the second plating layer.

Electronic component package including sealing resin layer, metal member, ceramic substrate, and electronic component and method for manufacturing the same

A stretchable flexible substrate according to one aspect of the present disclosure includes: an electronic component; a first insulating layer located around the electronic component and having first and second main surfaces facing each other; a first metal layer that is in contact with the first main surface; a second metal layer that is in contact with the second main surface and electrically connected to the electronic component; and a second insulating layer that seals the electronic component, first insulating layer, and second metal layer, in plan view, a curved wiring portion extending from a central portion made up of at least the electronic component, portions of the first insulating layer and first and second metal layers, the curved wiring portion being made up of at least other portions of the first insulating layer, first and second metal layers, and the curved wiring portion being curved at least partially.

Stretchable flexible substrate including first insulating layer, second insulating layer, first metal layer, and second metal layer

A flexible substrate is provided with: a stretchable sheet; a member located on the sheet; and a stretchable strip connected to the member, and located on the sheet. When the amount of extension of the sheet is equal to or less than a predetermined value, the sheet has a first elastic modulus, and when the amount of extension of the sheet exceeds the predetermined value, the sheet has a second elastic modulus that is greater than the first elastic modulus and greater than the elastic modulus of the strip.

Flexible substrate including stretchable sheet

An electronic component package according to one aspect of the present disclosure includes a metal pattern layer having a first principal surface and a second principal surface, an electronic component disposed on the first principal surface and electrically connected to the metal pattern layer, at least one metal member disposed on the first principal surface and electrically connected to the metal pattern layer, a sealing resin layer disposed on the first principal surface, the electronic component and the at least one metal member, and an insulating layer disposed on the second principal surface. The at least one metal member is thicker than the electronic component. In plan view, the at least one metal member is disposed on an area of the first principal surface, the area including an end of the first principal surface. The at least a part of the metal pattern layer is exposed from the insulating layer.

Electronic component package including electronic component, metal member, and sealing resin

There is provided a transparent electrode comprising a supporting substrate, a first transparent electrically-conductive film provided on the supporting substrate, a transparent insulating film provided on the first transparent electrically-conductive film, and a second transparent electrically-conductive film provided on the transparent insulating film. In the transparent electrode of the present invention, all of the first transparent electrically-conductive film, the second transparent electrically-conductive film and the transparent insulating film provided therebetween comprise a metal compound, and the first transparent electrically-conductive film and the second transparent electrically-conductive film have a crystalline structure, whereas the transparent insulating film has an amorphous structure.

Transparent electrode and method for manufacturing the same

[Means for Solving Problem] A semiconductor chiphaving a plurality of electrode terminalsis held to oppose a circuit boardhaving a plurality of connection terminalswith a given gap provided therebetween, and the semiconductor chipand the circuit boardin this state are dipped in a dipping bathcontaining a melted resinincluding melted solder particles for a given period of time. In this dipping process, the melted solder particles self-assemble between the connection terminalsof the circuit boardand the electrode terminalsof the semiconductor chip, so as to form connectorsbetween these terminals. Thereafter, the semiconductor chipand the circuit boardare taken out of the dipping bath, and the melted resinhaving permeated into the gap between the semiconductor chipand the circuit boardis cured, so as to complete a flip-chip mounting body.

Growing community of inventors

Osaka, Japan

Takashi Ichiryu