Hitachi-high-technologies Corporation

Murata Manufacturing Co., Ltd.

Mitsubishi Electric Corporation

Renesas Electronics Corporation

Takashi Ichimura

Shinichi Kato

Atsushi Sakai

Hisaya Murakoshi

Takeshi Ogashiwa

Hiroyuki Ito

Kenji Aoki

Takuya Aoyagi

Tadashi Fujieda

Toshihide Agemura

Tatsuya Miyake

Kenji Tanimoto

Takashi Naitou

Takahiro Azuma

Takanobu Naruse

Yasuko Aoki

Noriko Shimizu

Hiroshi Nitoh

Chiaki Fujii

Hisao Nitta

Boklae Cho

Lei Li

Nobuyuki Sonobe

Naoki Kawamura

A first slave device () is connected between a master device () retaining a reference time and a second slave device () and executes time synchronization with the master device () in accordance with the PTP, together with the second slave device (). A first synchronization information transmitter () transmits Sync and Follow_Up messages to the second slave device (), a first request information receiver () receives a Delay_Req message from the second slave device (), and a first response information transmitter () transmits a Delay_Resp message to the second slave device (). A first time corrector () executes time correction based on a propagation delay time relative to the master device (), calculated from times identified through transmission and reception of messages to and from the master device (), during a period different from the period from transmission of the Sync message until reception of the Delay_Req message.

Time synchronization device, time synchronization system, and recording medium

The purpose of the present invention is to provide a charged particle beam device that exhibits high performance due to the use of vanadium glass coatings, and to provide a method of manufacturing a component for a charged particle beam device. Specifically provided is a charged particle beam device using a vacuum component characterized by comprising a metal container, the interior space of which is evacuated to form a high vacuum, and coating layers formed on the surface on the interior space-side of the metal container, wherein the coating layers are vanadium-containing glass, which is to say an amorphous substance. Coating vanadium glass onto walls of a space where it is desirable to form a high vacuum, for example walls in the vicinity of an electron source, reduces gas discharge in the vicinity of the electron source, and the getter effect of the coating layer induces localized evacuation and enables the formation of an extremely high vacuum, even in spaces having a complex structure, without providing a large high-vacuum pump.

Charged particle beam device, and method of manufacturing component for charged particle beam device

A conventional method to process a tip fails to designate the dimension of the shape of the end of the tip, and so fails to obtain a tip having any desired diameter. Impurities may be attached to the tip. Based on a correlation between the voltage applied or the time during processing of the end of the tip and the diameter of the tip end, the applied voltage is controlled so as to obtain a desired diameter of the tip end for processing of the tip. This allows a sharpened tip made of a tungsten monocrystal thin wire to be manufactured to have any desired diameter in the range of 0.1 &#x3bc;m or more and 2.0 &#x3bc;m or less.

Method for manufacturing electron source

A detector of a magnetic field probe includes a first wiring pattern formed on a first surface of a multilayer substrate and having a predetermined inclination with respect to an axial line direction of the magnetic field probe, a second wiring pattern formed on a second surface and having the predetermined inclination with respect to the axial line direction, and a first penetrating via penetrating through the multilayer substrate in the thickness direction and connecting a front end portion of the first wiring pattern and a front end portion of the second wiring pattern. A rear end portion of the first wiring pattern is connected to a conductor pattern configuring a strip line and a rear end portion of the second wiring pattern is connected to ground patterns configuring the strip line.

Magnetic field probe

In a wiring substrate, a double data rate (DDR) memory and a memory controller controlling the DDR memory are mounted. Further, in the wiring substrate, plural equal-length wires connecting the DDR memory and the memory controller are formed. The plural equal-length wires include a differential transmission line, such as a clock wire transmitting a clock signal, which is connected via a common mode choke coil. The differential transmission line may have a wire length shorter than a wire length of another equal-length wire, by a wire length corresponding to delay time of a transmission signal due to the common mode choke coil.

Wiring substrate in which equal-length wires are formed

The present invention provides a charged particle beam device in which signal electrons () are generated from a sample when the sample () is irradiated with a primary charged particle beam (), and then enter different positions of a position-sensitive signal detector () in accordance with energy of the signal electrons (), whereby an energy distribution image of the signal electrons generated from the sample is acquired. Accordingly, it becomes possible to discriminate and select signal electrons having arbitrary energy to thereby obtain an image to which information specific to the arbitrary energy is reflected, and to acquire various characteristic information of the sample.

Charged particle beam device

An electron beam device includes an electron gun section having an internal space kept at an ultrahigh vacuum level for generating a primary electron beam, a mirror section having an internal space kept at a vacuum level lower than that of the electron gun section for scanning a specimen with an electron probe of the primary electron beam generated in the electron gun section and focused on the specimen, a differential exhaust diaphragm for providing communication in internal space between the electron gun section and the mirror section and passing the primary electron beam, and a control section for controlling respective constituent elements in the electron beam device. A diaphragm mechanism having a plurality of different diaphragm aperture diameters is provided between a second anode and a first condenser lens.

Electron beam device and its control method

Growing community of inventors

Tokyo, Japan

Takashi Ichimura