Honda Giken Kogyo Kabushiki Kaisha

Takashi Hosoi

Mizuho Doi

Nariaki Kuriyama

Tomoyuki Nishio

Satoshi Hiyama

Atsushi Inaba

Hiroshi Yamakawa

Nobuhiro Fueki

Sukeyuju Shinotuka

Sukeyuki Shinotuka

A very small and economical acceleration sensor which can detect acting acceleration with high sensitivity and high accuracy by precisely processing a semiconductor substrate and the like by using the photoengraving technique in a semiconductor manufacturing process to accurately form the elements themselves such as a sensor case, a cavity, a heater, a temperature-sensing resistor element, and a heat-type temperature-sensing resistor element, and the relative placement of each element. One embodiment of the acceleration sensor can detect acceleration acting from any of the three-dimensional directions.

Acceleration sensor with temperature resistor elements

Acceleration sensor

A gas rate sensor comprising a sensor body, a pump control device and a resistive bridge circuit. Semiconductor substrates are accurately photoengraved by semiconductor fabrication techniques to integrally form a pair of heat-generating and heat-sensitive resistive elements, a gas passageway, a pump casing, and other components in the sensor body. The pump control device controls a piezoelectric pump for creating a gas flow. The resistive bridge circuit is composed of the aforementioned resistive elements and a pair of reference resistors. The pump control device sets the gas flow rate to a given value to detect only the angular velocity acting in the direction of yaw. The angular velocity can be detected accurately with high sensitivity.

Gas rate sensor for detecting horizontal angular velocity

A gas flow type sensor with heat-wire bridge having an excellent performance which is attained by optimizing a sputtering process and a heat treatment process for forming a three-layer film (SiN-Pt-SiN) on a semiconductor substrate and improving interfacial adhesion of the three layers and, at the same time, effectively reducing any interfacial stress produced therein. The process comprises a film forming process for sequentially depositing by sputtering SiN, Pt and SiN in three layers on a semiconductor substrate and a heat treatment process for heat treatment of the coated films at a temperature up to 600.degree. C.

Method of manufacturing a gas flow type sensor

A semiconductor type gas rate sensor which is capable of accurately sensing with a sufficient sensitivity an angular velocity acting on its body made of semiconductor substrates having a nozzle port and a gas path etched therein with a pair of heat wires (heat-sensitive resistance elements) provided in the gas path, wherein an optimal flow of gas injected into the gas path through the nozzle port is ensured by designing the nozzle port of 300 to 1000 microns in width and of not less than 2 mm in length and providing the gas path at its downstream end with an outlet allowing the gas to flow straight out from the gas path therethrough.

Semiconductor type gas rate sensor

A gas flow type angular velocity sensor comprising two semiconductor substrates wherein only the first semiconductor substrate is provided with a groove etched thereon constituting the gas path and the second semiconductor substrate is provided with paired heat wires formed thereon. The two semiconductor substrates are coupled and bonded to each other to form the sensor body.

Growing community of inventors

Wako, Japan

Takashi Hosoi