Toyoda Gosei Co., Ltd.

Showa Denko K.k.

Takashi Hodota

Takehiko Okabe

Hiroshi Osawa

Kyosuke Masuya

Hironao Shinohara

Koji Kamei

Yoshiki Saito

Daisuke Shinoda

Remi Ohba

Shinichi Matsui

Yasuhiro Takenaka

A method of manufacturing a light emitting element includes forming an n-type semiconductor layer that includes an n-type clad layer and AlGaN (0.1&#x2264;x&#x2264;1) as a main component, forming an n-side contact electrode that includes a laminate structure including a Ti layer and a Ru layer, the Ti layer being in contact with the n-type semiconductor layer, and forming an ohmic contact of the n-type semiconductor layer and the Ti layer by a heat treatment.

Light emitting element including contact electrode with laminate structure, and method of manufacturing the same

A semiconductor light-emitting element includes: a laminated semiconductor layer in which an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer are laminated; a transparent conductive layer laminated on the p-type semiconductor layer of the laminated semiconductor layer and composed of a metal oxide having optical transparency to light emitted from the light-emitting layer; an insulating reflation layer laminated on the transparent conductive layer in which plural opening portions are provided to expose part of the transparent conductive layer; a metal reflection layer formed on the insulating reflection layer and inside the opening portions and composed of a metal containing aluminum; and a metal contact layer provided between the part of the transparent conductive layer exposed at the opening portion and the part of the metal reflection layer formed inside the opening portion, which contains an element selected from Group VIA and Group VIII of a periodic table.

Semiconductor light-emitting element comprising an insulating reflection layer including plural opening portions

A semiconductor light emitting element includes: a laminated semiconductor layer in which an n-type semiconductor layer, a light emitting layer and a p-type semiconductor layer are laminated; plural n-side electrodes that are laminated on the n-type semiconductor layer, electrically connected to the n-type semiconductor layer and arranged to surround at least a partial region of the light emitting layer and the p-type semiconductor layer as viewed from a lamination direction; and a p-side electrode that is provided on the p-type semiconductor layer, provided with a reflective property to light outputted from the light emitting layer and electrically connected to the p-type semiconductor layer, the p-side electrode including a connecting portion, which is used for electrical connection with an outside, at a region surrounded by the plural n-side electrodes as viewed from the lamination direction.

Semiconductor light emitting element

A semiconductor light-emitting element () including: an n-type semiconductor layer (); a light-emitting layer (); a p-type semiconductor layer (); a transparent conductive layer () laminated on the p-type semiconductor layer; a reflective film () which is composed of a material having optical transparency to light emitted from the light-emitting layer and an insulating property and is laminated on the transparent conductive layer; a p-conductive body () which penetrates the reflective film and is electrically connected to the transparent conductive layer; an n-electrode () electrically connected to the n-type semiconductor layer; and a p-electrode () having a p-adhesion layer () which is laminated on the reflective film, is electrically connected to the other end of the p-conductive body, and is composed of the same material as that for the transparent conductive layer and a p-metal reflective layer () which is laminated on the p-adhesion layer.

Semiconductor light-emitting element

A semiconductor light emitting element () including of a substrate () composed of sapphire; a laminated semiconductor layer () composed of an n-type semiconductor layer (), a light emitting layer () and a p-type semiconductor layer () provided on the substrate (); a first electrode () formed in the p-type semiconductor layer (); and a second electrode () formed in the n-type semiconductor layer (). Further, the first electrode () includes a first conductive layer () composed of an oxide transparent conductive material laminated on the p-type semiconductor layer (); a reflection layer () which contains silver laminated on the first conductive layer (); a second conductive layer () composed of an oxide conductive material laminated on the reflection layer (); and a coating layer () provided so as to cover the first conductive layer (), the reflection layer () and the second conductive layer ().

Semiconductor light emitting element and method for producing semiconductor light emitting element

A semiconductor light emission element () includes: a substrate (); multi-layered semiconductor layers () including a light emission layer () and layered on the substrate (); a transparent electrode () including an indium oxide and layered on the multi-layered semiconductor layers (); a first junction layer () including tantalum as a valve action metal and layered on the transparent electrode () in such a manner that a side of the first junction layer () being in contact with the transparent electrode () is a tantalum nitride layer or a tantalum oxide layer; and a first bonding pad electrode () layered on the first junction layer () and used for electrical connection with outside. This improves a bonding property of the transparent electrode or the semiconductor layer with the connection electrode and reliability of the electrodes.

Semiconductor light emission element

Disclosed is a semiconductor light-emitting element including a substrate; a laminated semiconductor layer in which an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer are laminated on the substrate in this order; one electrode joined with the p-type semiconductor layer; and another electrode joined with the n-type semiconductor layer, wherein one or both of the one and other electrodes has a structure such that an ohmic contact layer, a metal reflection layer, a first anti-diffusion layer and a first adhesion layer are laminated in this order, and the first adhesion layer has an outer peripheral portion which extends so as to be in contact with the laminated semiconductor layer, so as to completely cover the first anti-diffusion layer.

Semiconductor light-emitting element, method for producing the same, lamp, lighting device, electronic equipment, mechanical device and electrode

Disclosed is a semiconductor light emitting element (), which includes: an n-type semiconductor layer (); a light emitting layer (), which is laminated on one surface of the n-type semiconductor layer () such that a part of the surface is exposed, and which emits light when a current is carried therein; a p-type semiconductor layer () laminated on the light emitting layer (); a multilayer reflection film (), which is configured by alternately laminating low refractive index layers () and high refractive index layers () that have a refractive index higher than that of the low refractive index layers () and also have transparency with respect to light emitted from the light emitting layer (), and which is laminated on the exposed portion of the n-type semiconductor layer (), the exposed portion being on one side of the n-type semiconductor layer; an n-conductor portion (), which is formed by penetrating the multilayer reflection film (), and which has one end thereof connected to the exposed portion of the n-type semiconductor layer (); and an n-electrode (), which is laminated on the multilayer reflection film (), and which has the other end of the n-conductor portion () connected thereto. Thus, light extraction efficiency is improved in the semiconductor light emitting element mounted by flip-chip bonding.

Semiconductor light emitting element, light emitting device using semiconductor light emitting element, and electronic apparatus

Disclosed is a semiconductor light emitting element () which includes: plural n-side columnar conductor portions (), each of which is provided by penetrating a p-type semiconductor layer () and a light emitting layer (), and is electrically connected to an n-type semiconductor layer (); an n-side layer-like conductor portion (), which is disposed on the rear surface side of the p-type semiconductor layer () to face the surface of the light emitting layer () when viewed from the light emitting layer (), and is electrically connected to the n-side columnar conductor portions (); plural p-side columnar conductor portions (), each of which is electrically connected to the p-type semiconductor layer (); and a p-side layer-like conductor portion (), which is disposed on the rear surface side of the p-type semiconductor layer () to face the light emitting layer () when viewed from the light emitting layer (), and is electrically connected to the p-side columnar conductor portions (). Thus, nonuniformity of the quantity of light outputted from the light emitting layer of the semiconductor light emitting element is suppressed, and reduction of the area of the light emitting layer in the semiconductor light emitting element is suppressed.

Semiconductor light emitting element, electronic apparatus, and light emitting device

In a FC-mounted semiconductor light-emitting element, rise of a forward voltage is suppressed and light emission output is increased. A semiconductor light-emitting element includes: a laminated semiconductor layer including a first semiconductor layer having a first conduction type, a light-emitting layer and a second semiconductor layer having a second conduction type opposite to the first conduction type; a first electrode connected to the first semiconductor layer; and a second electrode provided on the second semiconductor layer, the second electrode including: a transparent conductive layer having thick portions and transparent to light from the light-emitting layer; an insulation layer laminated on the transparent conductive layer with a lower refractive index than the transparent conductive layer; a conductive metal reflecting layer laminated on the insulation layer; and a conductor portion provided through the insulation layer, which is electrically connected to one of the thick portions and the metal reflecting layer.

Semiconductor light-emitting element and semiconductor light-emitting device

The present invention provides a method for producing a light-emitting diode, the method comprising a lamination step of forming a laminated semiconductor layer by sequentially laminating an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer onto a substrate, as well as forming a plurality of reflective p-type electrodes on top of the p-type semiconductor layer, a plating step of forming a seed layer that covers the reflective p-type electrodes and the p-type semiconductor layer, and fowling a plating layer on top of the seed layer, a removal step of removing the substrate from the n-type semiconductor layer, thereby exposing a light extraction surface of the n-type semiconductor layer, and an electrode formation step of performing dry etching of the light extraction surface of the n-type semiconductor layer using an etching gas containing the same element as a dopant element within the n-type semiconductor layer, and subsequently forming an n-type electrode on the light extraction surface.

Method for producing light-emitting diode

Disclosed is a semiconductor device which is improved in output power efficiency since reflection by the substrate is reduced. This semiconductor device is also excellent in strength characteristics of a supporting substrate. Also disclosed is a method for producing such a semiconductor device. Specifically disclosed is a nitride semiconductor device wherein at least an n-type semiconductor layer, a light-emitting layer, a p-type semiconductor layer, a metal film layer and a plated metal plate are sequentially stacked in this order on a substrate. This nitride semiconductor device is characterized in that the metal film layer and the plated metal plate are partially formed on the p-type semiconductor layer. Also disclosed is a nitride semiconductor device having a structure wherein at least an n-type semiconductor layer, a light-emitting layer, a p-type semiconductor layer, a metal film layer and a plated metal plate are sequentially stacked in this order, the device characterized in that the metal film layer and the plated metal plate are partially formed on the p-type semiconductor layer and a light-transmitting material layer is formed on the p-type semiconductor layer in a region where the metal film layer and the plated metal plate are not formed.

Nitride semiconductor light-emitting device and production method thereof

The present invention provides a production method for a nitride semiconductor light emitting device, which warps less after removing the substrate, and which can emit light from the side thereof; specifically, the present invention provides a production method for a nitride semiconductor light emitting device comprising: forming stacked layers by stacking at least an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer on a substrate in this order; forming grooves which divide the stacked layers so as to correspond to nitride semiconductor light emitting devices to be produced; filling the grooves with a sacrifice layer; and forming a plate layer on the p-type semiconductor layer and the sacrifice layer by plating.

Production method for nitride semiconductor light emitting device

A GaN-based semiconductor light-emitting deviceincludes a stacked bodyA having the component layersthat include an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer each formed of a GaN-based semiconductor, sequentially stacked and provided as an uppermost layer with a first bonding layermade of metal and a second bonding layerformed on an electroconductive substrate, adapted to have bonded to the first bonding layerthe surface thereof lying opposite the side on which the electroconductive substrateis formed, made of a metal of the same crystal structure as the first bonding layer, and allowed to exhibit an identical crystal orientation in the perpendicular direction of the bonding surface and the in-plane direction of the bonding surface.

GaN-based semiconductor light-emitting device and method for the fabrication thereof

The present invention provides a nitride semiconductor light emitting device, which comprises positive and negative electrodes with high adhesion, can output high power, and does not generate heat; specifically, the present invention provides a nitride semiconductor light emitting device comprising at least an ohmic contact layer, a p-type nitride semiconductor layer, a nitride semiconductor light emitting layer, and an n-type nitride semiconductor layer, which are laminated on a plate layer, wherein a plate adhesion layer is formed between the ohmic contact layer and the plate layer, and the plate adhesion layer is made of an alloy comprising 50% by mass or greater of a same component as a main component of an alloy contained in the plate layer.

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Ichihara, Japan

Takashi Hodota