Sanyo Electric Co., Ltd.

Takashi Hiroshima

Hideaki Fujiwara

Shoji Sudo

Hideharu Nagasawa

Kazutomo Goshima

The invention is directed to a semiconductor device having a diode element which prevents a leakage current due to a vertical parasitic bipolar transistor and enhances current efficiency. An element isolation insulation film is provided on an N well layer, and a first Player and a second Player are formed on the N well layer surrounded by the element isolation insulation film, the second Player being formed at a distance from the first Player. An electrode layer is formed on the N well layer between the first Player and the second Player. An Nlayer for a contact is formed on the N well layer between the element isolation insulation film and other element isolation insulation film. The first Player is connected with an anode wiring, and the electrode layer, the second Player, and the Nlayer are connected with a cathode wiring. A diode element utilizing a lateral PNP bipolar transistor is thus formed on the semiconductor substrate.

Semiconductor diode device with lateral transistor

A semiconductor memory capable of attaining a long life, a low voltage, a high-speed operation, low power consumption and high integration is provided. The semiconductor memory comprises a control gate electrode, a floating gate electrode, a semiconductor region, a first insulator film formed on one surface of the semiconductor region and a second insulator film formed on another surface of the semiconductor region. A prescribed voltage is applied to the control gate electrode or a drain region thereby injecting carriers from the control gate electrode or the drain region into the floating gate electrode through the first insulator film, the semiconductor region and the second insulator film.

Growing community of inventors

Gunma, Japan

Takashi Hiroshima