Renesas Electronics Corporation

Hitachi Astemo Ltd.

Kabushiki Kaisha Toshiba

Hitachi, Ltd.

Hitachi Automotive Systems, Ltd.

Takashi Hirao

Takayuki Hashimoto

Noboru Akiyama

Takeshi Tokuyama

Mitsunori Tadokoro

Hirokuni Yano

Nobutake Tsuyuno

Akira Matsushita

Akihiro Namba

Hiroki Matsudaira

Nobuyoshi Matsuura

Masaki Shiraishi

Noriyuki Maekawa

Koji Tateno

Shintaro Tanaka

Hideo Ishii

Masami Oonishi

Aurelien Nam Phong Tran

Hironori Nagasaki

Mutsuhiro Mori

Toshiya Satoh

Kazuhiro Suzuki

Kan Yasui

Kenji Tanaka

Toshiaki Ishii

Ryoichi Kato

Masahiro Hori

Eiichi Ide

Atsuo Nishihara

Junpei Kusukawa

Hiromi Shimazu

Shinji Yonezawa

Takaki Itaya

Takuya Ishigaki

Takahiro Araki

Akira Sawaoka

Toru Kato

Masahito Mochizuki

Tatsuya Sumiyoshi

Yoshimi Niisato

Hiroshi Houzouji

Haruka Shimizu

A power module includes a power semiconductor element converting DC power into AC power and outputting the AC power to a motor; a conductor electrically connected to the power semiconductor element; a substrate having a substrate wiring connected to the conductor on a surface; and a resin sealing material sealing the power semiconductor element, the conductor, and the substrate. The substrate has, at a position in contact with an end portion of the resin sealing material, a concave portion formed by a surface of the substrate wiring becoming concave in a continuously curved surface shape.

Power module and power conversion device using the same

An object of the present invention is to provide an inverter integrated motor that achieves both improvement in cooling performance of a current sensor and downsizing of an entire device. An inverter integrated motor includes: a power module that converts a direct current into an alternating current; a flow path forming body that is formed so as to flow and cover a refrigerant in the power module; an inverter that installs the power module and the flow path forming body inside; a current sensor that detects the alternating current; and a motor that houses a stator and a rotor, wherein the power module is disposed at a position facing a rotation shaft of the motor via the stator and the rotor, and the current sensoris disposed between the flow path forming body and a coil end of the stator when viewed from a direction perpendicular to the rotation shaft, and at least a part of the current sensor is housed in a motor housing.

Inverter integrated motor

A power conversion device can be miniaturized. A power conversion device includes a power module that performs switching operation, a smoothing capacitor that smooths a voltage ripple caused by the switching operation, a circuit board that controls driving of the power module, a housing that accommodates the power module and the smoothing capacitor, a first fixing member for fixing the power module to the housing, and a second fixing member for fixing the smoothing capacitor to the housing. The circuit board straddles between the power module and the smoothing capacitor, and is fixed by the first fixing member and the second fixing member.

Power conversion device

No consideration is given to heat transferred from a semiconductor module to a capacitor via a bus bar module. The heat generated by a semiconductor module () is transferred to a bus bar module () via a DC terminal (A) of the semiconductor module (). As illustrated in FIG.(B), the heat transferred to the bus bar moduleis then transferred to the pressing membervia the annular conductorand the boltA. Since the pressing memberis in close contact with the second coolerB, the heat transferred to the pressing memberis cooled by the second coolerB. On the other hand, the heat transferred to the convex portionA of the housingis transferred to the first coolerA via the housingand cooled. As a result, in the configuration in which a capacitor () is connected to the semiconductor module () via the bus bar module (), the heat transferred from the semiconductor module () to the capacitor () can be suppressed.

Power conversion device and motor-integrated power conversion device

A power semiconductor device includes a first submodule including a first power semiconductor element, a second submodule including a second power semiconductor element, a positive electrode side conductor portion and a negative electrode side conductor portion, an intermediate substrate that forms a negative electrode side facing portion facing the negative electrode side conductor portion with the first submodule sandwiched between them and a positive electrode side facing portion facing the positive electrode side conductor portion with the second submodule sandwiched between them, and a plurality of signal terminals that transmit a signal for controlling the first power semiconductor element or the second power semiconductor element. The second submodule is disposed such that directions of an electrode surface of the second power semiconductor element and an electrode surface of the first power semiconductor element are inverted, a signal relay conductor portion is disposed in a space sandwiched between a part of the second submodule and the intermediate substrate in a height direction of the second submodule, and the intermediate substrate has a wire connected to the signal relay conductor portion and electrically connected to the signal terminal. In this manner, productivity of the power semiconductor device is improved while an increase in main circuit inductance is suppressed.

Power semiconductor device

A power semiconductor apparatus includes a power semiconductor element having low and high potential side electrodes and a sense electrode, high and low potential side conductors electrically connected with the high potential side electrodes, respectively, a sense wiring electrically connected with the sense electrode, and a first metal portion facing the low potential side conductor or the low potential side conductor across the sense wiring. When viewed from an array direction of the sense wiring and the first metal portion, the sense wiring has a facing portion facing the high or low potential side conductor, the first metal portion forms a recess in a part overlapping the facing portion, and a depth of the recess is formed such that a distance between a bottom of the recess and the sense wiring is larger than a distance between the sense wiring and the high or low potential side conductor.

Power semiconductor apparatus

Detection accuracy of a collector sense in detecting a voltage is improved. A power modulehas a first conductorand a second conductorto which a plurality of active elementsandconfiguring upper and lower arm circuits are connected. In addition, the power modulehas an AC side terminalB protruding from one side, a positive electrode side terminalB and a negative electrode side terminalB which protrude from the other side, an intermediate electrode portionthat connects the first conductorand the second conductorto each other, and a collector sense wiringin which a collector electrode of an active elementand the first conductorare connected to each other via a sense connection portion. The intermediate electrode portionis disposed close to the active elementwhich is closest to the AC side terminalB, and the sense connection portionis disposed close to the active elementwhich is farthest from the AC side terminalB.

Power module with active elements and intermediate electrode that connects conductors

An object of the present invention is to improve assemblability of a power semiconductor device. A power semiconductor device includes a plurality of submodules that includes a semiconductor element interposed between a source conductor and a drain conductor, a sense wiring that transmits a sense signal of the semiconductor element, and an insulating portion at which the sense wiring and the sense conductor are arranged, and a source outer conductor that is formed to surround the source conductor and is joined to the source conductor in each of the plurality of submodules. Each source conductor included in the plurality of submodules includes protrusion portions that are formed toward the sensor wiring from the source conductor, are connected to the sense wiring, and define a distance between the sense wiring and the source outer conductor.

A power semiconductor device includes a circuit body, first and second insulations, first and second bases, a case, and a distance regulation portion. The circuit body incudes a semiconductor element and a conductive portion. The first insulation and the second insulation oppose each other. The first base and second base also oppose each other. The case has a first opening portion covered with the first base and a second opening portion covered with the second base. The distance regulation portion has a first end that contacts the first base and a second end, that is opposite to the first end, and that contacts the second base. The distance regulation portion regulates a distance between the first base and the second base.

Power semiconductor device having a distance regulation portion and power conversion apparatus including the same

A power conversion device includes first and second power semiconductor elements, and a circuit for transferring a drive signal of the first and second power semiconductor elements. The circuit board includes a first emitter wire which is formed along an arranging direction of the first power semiconductor element and the second power semiconductor element, a first gate wire which is disposed between the first power semiconductor element and the first emitter wire, a second gate wire which is disposed between the second power semiconductor element and the emitter wire, a third gate wire which is disposed to face the first gate wire and the second gate wire with the emitter wire interposed between the third gate wire and the first gate wire and the second gate wire, and a first gate resistor which connects the first gate wire and the third gate wire over the first emitter wire.

Power conversion device for reducing an inductance difference between control signal wires of a power semiconductor and suppressing a current unbalancing of the control signals

To improve yield and reliability at the time when a plurality of semiconductor elements used for a semiconductor device is arranged in parallel. A semiconductor device according to the present invention includes a first submodule which includes a first semiconductor element sandwiched between a first conductor and a second conductor and a first lead wire which transmits a control signal of the first semiconductor element, a second submodule which includes a second semiconductor element sandwiched between a third conductor and a fourth conductor and a second lead wire which transmits a control signal of the second semiconductor element, a fifth conductor which is formed to cover the first conductor and the third conductor and is bonded to the first conductor and the third conductor, and a sixth conductor which is formed to cover the second conductor and the fourth conductor and is bonded to the second conductor and the fourth conductor, in which the first conductor is formed so as not to overlap with a part of the first lead wire facing a first connection portion to be connected to the second lead wire.

Semiconductor device

In an object of the present invention, an object is to provide a technique for achieving higher accuracy in current detection of a radio frequency current, in a current detection device. The current detection device of the present invention includes two or more conductors through which a current shunted from a same conductor flows; conductors through which the shunted current flows have portions opposed to each other; currents flow in opposite directions in opposing portions of the conductors; and a magnetic field detecting element is provided between the opposing portions of the conductors.

Current detection device

In order to improve productivity of a semiconductor device, while improving stability of the blocking voltage of the semiconductor device, this semiconductor device is characterized by having a semiconductor element, and a laminated structure having three resin layers, said laminated structure being in a peripheral section surrounding a main electrode on one surface of the semiconductor element. The semiconductor device is also characterized in that the laminated structure has, on the center section side of the semiconductor element, a region where a lower resin layer is in contact with an intermediate resin layer, and a region where the lower resin layer is in contact with an upper resin layer.

Semiconductor device and power conversion device using same

A semiconductor device is provided that can prevent a current from being concentrated into a specific chip, and can reduce loss as well as noise. The semiconductor device according to the present invention includes: a switching element; a main diode that is connected in parallel to the switching element; and an auxiliary diode that is connected in parallel to the switching element and has a different structure from that of the main diode, wherein in a conductive state a current flowing through the auxiliary diode is smaller than that through the main diode, and in a transition period from the conductive state to a non-conductive state a current flowing through the auxiliary diode is larger than that through the main diode.

Semiconductor device and power converter using the same

According to one embodiment, a memory system includes non-volatile memory, a block management table that stores whether data in the non-volatile memory is valid or invalid in a unit of cluster, and a controller configured to execute compaction. In the block management table, first information related to likelihood that valid data within the block is invalidated is registered for each of the blocks. The controller is configured to select a block to be a target of the compaction based on the first information and use the selected block to execute the compaction.

Memory system, controller and control method of memory

Growing community of inventors

Tokyo, Japan

Takashi Hirao