Kyocera Corporation

Toshiba Materials Co., Ltd.

Kabushiki Kaisha Toshiba

Hitachi Software Engineering Company, Ltd.

Shibaura Institute of Technology

Other

Hitachi, Ltd.

Takashi Hino

Shuichi Saito

Kazuhiro Ishikawa

Tetsuo Inoue

Michio Sato

Masashi Nakatani

Kazuaki Iwamura

Fuminobu Komura

Atsushi Yumoto

Takatoshi Kodaira

Haomin Jin

Takayuki Naba

Hiroshi Komorita

Naruto Takasaki

Tadashi Tanaka

Takashi Rokutanda

Nobuhiro Ishimaru

Mari Shimizu

Kouji Ueda

Tomohiro Sugano

Yoshiaki Kagawa

Koichi Moriguchi

A member for use in a plasma processing device of the disclosure includes a base material and a film containing yttrium oxide as a main component on the base material. An area occupancy of closed pores of the film is 0.2 area % or less, and a full width at half maximum of a diffraction peak on a (222) plane of yttrium oxide obtained by X-ray diffraction of the film is 0.25° or less. A plasma processing device according to the disclosure includes the member for use in a plasma processing device.

Member for use in plasma processing device, and plasma processing device provided therewith

A member for use in a plasma processing device of the disclosure includes a base material, and a film of an oxide of a rare earth element on at least a part of the base material. A coefficient of variation of thickness of the film is 0.04 or less. A plasma processing device of the disclosure includes the member for use in a plasma processing device. In the member for use in a plasma processing device according to the disclosure, variation in film thickness is small.

A component for a plasma processing apparatus includes a substrate and a film on at least a part of the substrate. The film includes an oxide, a fluoride, an oxyfluoride, or a nitride of a rare earth element. A ratio σof a compressive stress σto occur across a surface of the film to be exposed to plasma and a compressive stress σto occur across the surface in a direction perpendicular to the compressive stress σis 5 or less. A plasma processing apparatus includes the above component.

Component for plasma processing apparatus and plasma processing apparatus including component

Provided are a member for plasma processing device which has an excellent plasma resistance and improved adhesion strength of a film to a base material, and a plasma processing device provided with the same. A member for plasma processing device includes: a base material containing a first element which is a metal element or a metalloid element; a film containing a rare-earth element oxide, or a rare-earth element fluoride, or a rare-earth element oxyfluoride as a major constituent, the film being located on the base material; and an amorphous portion containing the first element, a rare earth element, and at least one of oxygen and fluorine, the amorphous portion being interposed between the base material and the film.

Member for plasma processing device and plasma processing device provided with same

A component for a plasma processing apparatus, and a plasma processing apparatus are highly resistant to plasma and are highly durable. The component includes a substrate containing a first element that is a metal element or a semimetal element, and a film located on the substrate and containing yttrium oxide as a main constituent. The film contains yttrium oxide crystal grains oriented with a deviation angle of ±10° from a {111} direction of a crystal lattice plane of yttrium oxide. The yttrium oxide crystal grains oriented with the deviation angle have an area ratio of 45% or greater.

Component for plasma processing apparatus and plasma processing apparatus

A component comprises a film containing yttrium oxide. A cross section of the film has a first portion, a second portion, and a third portion, and the first to third portions are separated from each other by 0.5 mm or more. A Vickers hardness B1 measured in the first portion, a Vickers hardness B2 measured in the second portion, a Vickers hardness B3 measured in the third portion, and an average value A of the Vickers hardnesses B1 to B3 are numbers satisfying 0.8A≤B1≤1.2A, 0.8A≤B2≤1.2A, and 0.8A≤B3≤1.2A.

Component and apparatus of manufacturing semiconductor

A plasma processing device member according to the disclosure includes a base material and a film formed of an oxide, or fluoride, or oxyfluoride, or nitride of a rare-earth element, the film being disposed on at least part of the base material, the film including a surface to be exposed to plasma, the surface having an area occupancy of open pores of 8% by area or more, and an average diameter of open pores of 8 &#x3bc;m or less.

Plasma processing device member, plasma processing device comprising said plasma processing device member, and method for manufacturing plasma processing device member

An aluminum nitride film includes a polycrystalline aluminum nitride. A withstand voltage of the aluminum nitride film is 100 kV/mm or more.

Aluminum nitride film, method of manufacturing aluminum nitride film, and high withstand voltage component

A plasma processing device member according to the disclosure includes a base material and a film formed of a rare-earth element oxide, or a rare-earth element fluoride, or a rare-earth element oxyfluoride, or a rare-earth element nitride, the film being disposed on at least part of the base material. The film includes a surface to be exposed to plasma, the surface having an arithmetic mean roughness Ra of 0.01 &#x3bc;m or more and 0.1 &#x3bc;m or less, the surface being provided with a plurality of pores, and a value obtained by subtracting an average equivalent circle diameter of the pores from an average distance between centroids of adjacent pores is 28 &#x3bc;m or more and 48 &#x3bc;m or less. A plasma processing device according to the disclosure includes the plasma processing device member described above.

Plasma processing device member and plasma processing device provided with same

A component includes a film containing polycrystalline yttrium oxide. In an X-ray diffraction pattern of the film, a ratio I/Iof a maximum intensity Iof a peak attributed to monoclinic yttrium oxide to a maximum intensity Iof a peak attributed to cubic yttrium oxide satisfies an expression: 0&#x2264;I/I&#x2264;0.002.

Component and semiconductor manufacturing device

A base material is composed of a metal or ceramics, and an aluminum nitride coating is formed on an outermost surface thereof. The aluminum nitride coating is formed by impact sintering and contains fine particles having a particle diameter of 1 &#x3bc;m or less. A thickness of the aluminum nitride coating is no less than 10 &#x3bc;m. A film density of the aluminum nitride coating is no less than 90% An area ratio of aluminum nitride particles whose particle boundaries are recognizable existing in a 20 &#x3bc;m&#xd7;20 &#x3bc;m unit area of the aluminum nitride coating is 0% to 90% while an area ratio of aluminum nitride particles whose particle boundaries are unrecognizable is 10% to 100%. Such a component for a plasma apparatus having the aluminum nitride coating can provide a strong resistance to plasma attack and radical attack.

Component for plasma apparatus and method of manufacturing the same

The present invention provides a component for a plasma processing apparatus, the component comprising: a base material; an underlayer covering a surface of the base material; and an yttrium oxide film covering a surface of the underlayer, wherein the underlayer comprises a metal oxide film having a thermal conductivity of 35 W/m&#xb7;K or less, the yttrium oxide film contains at least either particulate portions made of yttrium oxide or non-particulate portions made of yttrium oxide, the particulate portions being portions where a grain boundary demarcating an outer portion of the grain boundary is observed under a microscope, and the non-particulate portions being portions where the grain boundary is not observed under a microscope, the yttrium oxide film has a film thickness of 10 &#x3bc;m or more and a film density of 96% or more, and when a surface of the yttrium oxide film is observed under a microscope, an area coverage ratio of the particulate portions is 0 to 20% in an observation range of 20 &#x3bc;m&#xd7;20 &#x3bc;m and an area coverage ratio of the non-particulate portions is 80 to 100% in the observation range.

Component for plasma processing apparatus and method for manufacturing component for plasma processing apparatus

The present invention provides a plasma etching apparatus componentincludes a base materialand an yttrium oxide coatingformed by an impact sintering process and configured to cover a surface of the base material. The yttrium oxide coatingcontains at least one of particulate portions and non-particulate portions. The yttrium oxide coatinghas a film thickness of 10 &#x3bc;m or above and a film density of 90% or above. The particulate portions have an area coverage ratio of 0 to 80% and the non-particulate portions have an area coverage ratio of 20 to 100%.

Plasma etching apparatus component and manufacturing method for the same

The present invention can extract a change not only from an orthorectified image but also from a plurality of images captured at different camera positions, under different lighting conditions, at different angles, and at different scaling factors. Foot-print information is extracted from each of images to be compared, and a change is detected by comparing the foot-print information.

Change detection equipment and method of image recognition

To provide a map generation device according to the present invention which extracts a polygon shape of a building having a complex upper portion structure from a wide area image. The map generation device includes an image appointment unit that receives appointment of at least one position in a building existing within an aerial photograph, a polygon extraction unit that extracts a building region based on a result of discriminating a color around the appointed position and extracts a polygon line of the building region, and a vector generation unit that generates a vector of the polygon line of the building region.

Growing community of inventors

Yokohama, Japan

Takashi Hino