Sharp Kabushiki Kaisha Corporation

Sharp Kabushiki

Other

Gunze Limited

Takashi Hayakawa

Shiro Narikawa

Kunio Ohashi

Katsumi Adachi

Yoshimi Kojima

Shaw Ehara

Toshiro Matsuyama

Eiji Imada

Hideo Nojima

Yuhi Yui

Yoshiharu Tsujimoto

Yukihito Nishio

Shoichi Nagata

Kenji Tani

Kazuki Wakita

Hideo Yamagishi

Eiichi Kido

Akitsugu Hatano

Masataka Kondo

Takasumi Wada

Yoshiyuki Nasuno

Kazuhito Nishimura

Kouichi Irihara

Toyokazu Mori

Koichi Moriyama

Yoshimi Watabe

Akihisa Matsuda

Atsushi Okada

Yoshikazu Fujiwara

Hirofumi Yanagizawa

Noriyoshi Kohama

Takumi Sakamoto

Masahiko Muramoto

Yoshikazy Fujiwara

Shiro Narukawa

A substratefor a photoelectric conversion device includes a first transparent conductive layerformed on at least a part of the surface region of a transparent substrate, the first transparent conductive layerhaving at least an opening portionexposing the substrate

Substrate for photoelectric conversion device, photoelectric conversion device, and stacked photoelectric conversion device

A multi-junction solar cell comprising: a support substrate having a first electrode layer, a plurality of photoelectric conversion devices and a second electrode layer stacked thereon, and an intermediate layer having an uneven surface being sandwiched between any two of the photoelectric conversion devices stacked adjacent each other.

Multi-junction solar cell

A substrate is disposed in a reactor kept to be a vacuum state, a material gas is supplied into a space in front of the substrate, high-frequency electric power is supplied to the material gas to generate plasma based on electric discharge excitation in the front space of the substrate, and an amorphous silicon thin film is deposited on the substrate by chemical vapour deposition. Further, an electrode section comprising tubular electrodes supplying the material gas through a plurality of gas discharge openings, and tubular electrode sucking and evacuating gases to the outside through a plurality of gas suction openings. Thereby, a higher silane gas and the like generated during the film deposition can be removed from a reactive region immediately, and a thin film is deposited on the substrate surface with the same condition of the film deposition at any spot of the substrate surface. Consequently, the amorphous silicon thin film with film quality may be deposited on the large-area substrate.

Plasma CVD apparatus suitable for manufacturing solar cell and the like

An image forming apparatus includes: an image support medium; a charging member for charging the surface of the image support medium in contact with the surface of it; an exposure device for irradiating with light the surface of the image support medium charged by the charging member to form a static latent image; a developing device for supplying developer to the static latent image formed on the image support medium to develop the latent image and for removing the leftover developer on the image support medium; a transfer device for transferring the developer image, which has been developed on the image support medium by the developing device, to a member to be transferred; and a scraping member for scraping foreign matter such as dust and paper particles on the image support medium. The image forming apparatus is constructed such that the charging member causes the developer to adhere to the scraped foreign matter, and then the foreign matter is collected by the developing device through the image support medium. The scraping member is held by a holder which has an opening for allowing the foreign matter to pass through into the charging member housing.

Imaging forming apparatus with enhanced cleaning of residual matter

In an image forming apparatus, when a transferred material exists in a transfer position between a photoreceptor drum and a transfer unit during an image forming operation, a transfer voltage, which has opposite polarity to that of a voltage applied to a brush charger and is used for transferring a developer image on the photoreceptor drum onto the transferred material is applied to the transfer unit. Meanwhile, when a transferred material does not exist in the transfer position during the image forming operation, a non-transfer voltage, which is lower than the transfer voltage, is applied to the transfer unit. As a result, defects on an image due to returning of a developer from the brush charger to the photoreceptor drum can be prevented from being generated.

Contact charging image forming apparatus having improved image transfer

An image forming apparatus adopting a cleaningless process using contact-type charging means, includes developer scattering means which is located between the charging means and an exposure position in contact with the surface of an image carrier. For example, the developer scattering means is a conducting brush which scatters, catches and temporarily holds the residual toner on the image carrier. With this structure, even in an image forming apparatus adopting the cleaningless process using the contact-type charging means, the residual toner on the image carrier is scattered and caught by developer catching means before the residual toner reaches the exposure position. Thus, a lowering of the image quality which is caused if the residual toner is patterned by the charging means is prevented, thereby improving the image quality. Consequently, it is possible to provide a small-sized superior image forming apparatus with high maintainability which is capable of recycling the developer and producing an image with high image quality.

Image forming apparatus

A photoconductor coupled liquid crystal light valve comprising at least a pair of transparent electrode, a liquid crystal layer and a photoconductive layer showing blocking properties both sandwiched between said transparent electrodes, wherein said photoconductive layer includes a light absorbing layer and a blocking layer having a band gap wider than said light absorbing layer, both said light absorbing layer and said blocking layer being formed of non-alloy a-Si; and a method for manufacturing said photoconductor coupled light valve wherein said photoconductive layer is prepared with electron cyclotron resonance method.

Liquid crystal light valve with photoconductor including light absorbing

A charging device for use in an image forming apparatus is disclosed which charges an object to be charged by contacting a conductive charging member with the surface of the object and then applying a voltage across the charging member and the object,

Charging device

An image-forming apparatus including a cleaning means for selectively removing foreign matters other than developer remaining on the surface of a photoconductor drum therefrom after a transferring process. The cleaning means is provided with a foreign-matter removing roller which comes into contact with the surface of the photoconductor drum. Foreign matters, which are charged by a transferring device to have a polarity reversed to that of the charged electric potential of toner through an electric field that is exerted between the surfaces of the roller and the photoconductor drum, are allowed to adhere to the surface of the foreign-matter removing roller. As for the surface of the foreign-matter removing roller, the surface electric potential of the foreign-matter removing roller is biased farther toward the polarity of the charged toner than the surface electric potential of the photoconductor drum at the contact portion between the photoconductor drum and the foreign-matter removing roller. Thus, it becomes possible to provide an image forming apparatus which is capable of supplying images with good picture quality for a long time, by using a cleaning operation of this cleaning means.

Image-forming apparatus

In an image forming apparatus including a charging element, a charged element, a developing element, and a cleaning element the dimensions of those elements satisfy either or both of the following relations:

Image forming apparatus for preventing damage to conductive fibers on a

A charging member comprised of a conductive shaft and conductive fibers planted thereon is brought into contact with a charged member with a photoconductor provided on the surface thereof. The conductive shaft is applied with a combined voltage of d.c. voltage and a.c. voltage having a peak-peak value lower than two times the discharge starting threshold voltage that is determined by the surrounding atmosphere around the charged member. While the charging member and the charged member rotate at different surface velocity, the charged member is charged through the contact area in which impedance is low due to the influence of a.c. voltage, so that a stable surface potential close to the d.c. voltage may be charged onto the charged member. Further, it is effective that the frequency f of the a.c. voltage will be so set up as to suffice a relation: f&gt;Vp/2R, where f is a frequency of the applied a.c. voltage, Vp(mm/s) is a moving velocity of the charged member, and R(mm) is a particle size of a developer used. Moreover, it is effective that another charging member is provided on the downstream side of the aforementioned charging member.

Method of charging a built-in electrophotographic charge member

The invention is directed to an apparatus for an electrophotographic process, equipped with a charging device of a contact type using a conductive roller or brush, and the charging device used therefor. The apparatus is characterized in the following constructions: roll-shaped fiber aggregation that is rotated in contact with the photoconductive surface through a spacing member; use as applied voltage to the fiber aggregation of periodically oscillating voltage having a lower limit exceeding the surface potential of the photoconductor in the aforementioned device; a brush-type charger that is vibrated while contacted with the photoconductor surface and regulated as required; a fiber roll-type charger wherein ventilation holes are disposed on the roller substrate surface; the fiber roll-type charger with holes further including a closed container with exhausting means enclosing the charger; set-up of a product of planting fiber intervals on a fiber roller and a peripheral velocity ratio of the photoconductor to the roller such that the product is smaller the average particle size of the developer used; changing application voltage to a charger roller depending transfer-treated portion or portions otherwise on the photoconductor surface; and provision of dirt preventer, aligned with the longitudinal direction to the charging roller with conductive fiber, and shiftable between contact and spaced position.

Electrophotographic copier and charging means used therefor

A photoconductor coupled liquid crystal light valve which comprises a pair of substrates opposite to each other, transparent electrodes arranged on each of the substrates, either one having a photoconductive layer and a carrier trapping layer formed over the transparent electrodes, a liquid crystal layer injected between the substrates and a voltage application means between the transparent electrodes.

Photoconductor coupled liquid crystal light valve

A method for fabricating a photoconductor coupled liquid crystal valve comprising the step of; deposing a transparent electrode on a transparent substrate; forming on said transparent electrode a photoconductive layer formed of amorphous silicon by the ECR; forming on said photoconductive layer an optical shielding layer formed of amorphous silicon by the ECR; forming on said optical shielding layer an optical reflection layer; forming an orientation film on said optical reflection layer; laminating on said orientation film a transparent substrate having a transparent electrode and another orientation film stoked thereon by the above method in such a manner that the two orientation films face each other with a spacer interposed therebetween; and disposing liquid crystals into said spacer.

Method of fabricating photoconductor coupled liquid crystal light valve

A photoconductor coupled liquid crystal light valve comprising a photoconductor layer, a liquid crystal layer and electrodes for applying voltage to the layers. The photoconductive layer is made of amorphous silicon containing hydrogen and/or halogen at more than 40 at%. The photoconductive layer preferably has a resistivity of between 10.sup.11 and 10.sup.12 ohm-cm and a photonconductivity of 10.sup.-8 and 10.sup.-6 cm.sup.2 /V. The photoconductive layer is preferably formed by electron cyclotron resonance.

Growing community of inventors

Nara, Japan

Takashi Hayakawa