Alps Electric Co., Ltd.

Other

Nagano Japan Radio Co., Ltd.

Takashi Hatanai

Akihiro Makino

Keishi Nakashima

Koichi Mukasa

Yutaka Yamamoto

Akihisa Inoue

Akinori Kojima

Yoshito Sasaki

Akira Takahashi

Eiji Umetsu

Yasuo Hayakawa

Yutaka Shimada

Yutaka Naito

Seiji Kikuchi

Ichirou Tokunaga

Makoto Nakazawa

Naoya Hasegawa

Kiyoshi Sato

Toshinori Watanabe

Fumihito Koike

Yoshihiro Kanada

Kazumasa Onishi

Nobuhiro Hayashi

Kiyohito Yamasawa

Teruo Bitoh

Junichi Murakami

Kiyoshi Kobayashi

Tsuyoshi Masumoto

Manabu Tamura

Junichi Ouchi

Takao Mizushima

Hirofumi Fukui

Shinji Murata

Munemitsu Abe

Hiroshi Sato

Koichi Takahashi

Toshitaka Minamisawa

Hiromitsu Sasaki

Teruyoshi Kubokawa

Kazuhiro Soejima

Shinichi Sasaqawa

Yutaka Naitoh

Magnetoresistive effect elements are provided with an element unit having an elongated shape in which an element length Lis formed to be longer than an element width W. The element unit has a fixed magnetic layer and a free magnetic layer laminated via a non-magnetic layer on the fixed magnetic layer. A magnetism direction of the fixed magnetic layer faces an element width direction (Y direction) of a sensitivity axis direction. First soft magnetic bodies formed to have a width size Wand a length size Lare arranged in a non-contact manner on both lateral sides of the magnetoresistive effect element. The length size Lis longer than the element length L, and the first soft magnetic body has an extension part extending in an element length direction from both sides in the element length direction of the element unit.

Magnetic sensor and magnetic sensor module

A glass substrate has a pair of main surfaces opposite to each other. Two island-shaped portions made of silicon are buried in the glass substrate. The two island-shaped portions are exposed from the two main surfaces of the glass substrate, respectively. An electrode is formed on one main surface of the glass substrate so as to be electrically connected to one exposed portion of one island-shaped portion, and another electrode is formed thereon so as to be electrically connected to one exposed portion of the other island-shaped portion. Still another electrode is formed on the other main surface of the glass substrate so as to be electrically connected to the other exposed portion of the one island-shaped portion. A silicon substrate having a pressure sensing diaphragm is bonded to the other main surface of the glass substrate.

Glass substrate and capacitance-type pressure sensor using the same

A hard magnetic alloy in accordance with the present invention is composed of at least element T selected from the group consisting of Fe, Co and Ni, at least one rare earth element R, and boron (B). The hard magnetic alloy has an absolute value of the temperature coefficient of magnetization of 0.15%/&deg; C. or less and a coercive force of 1 kOe, when being used in a shape causing a permeance factor of 2 or more. A hard magnetic alloy compact in accordance with the present invention has a texture, in which at least a part or all of the texture comprises an amorphous phase or fine crystalline phase having an average crystal grain size of 100 nm or less, is subjected to crystallization or grain growth under stress, such that a mixed phase composed of a soft magnetic or semi-hard magnetic phase and a hard magnetic phase is formed in the texture, and anisotropy is imparted to the crystal axis of the hard magnetic phase.

Hard magnetic alloy, hard magnetic alloy compact and method for producing the same

A tunneling magnetoresistive device comprises an insulating barrier layer, and at least two ferromagnetic layers provided on the same plane of the layer. The insulating barrier layer can be initially formed, so that when a metal layer is oxidized to form the insulating barrier layer, it is unnecessary to pay care to the influence of oxidation on the ferromagnetic layers. The insulating barrier layer can be formed in large thickness, thereby suppressing defects, such as pinholes, from occurring. Thus, a tunneling magnetoresistive device having good characteristics can be manufactured.

Tunneling magnetoresistive device

The encoder of the present invention includes at least a pair of giant magnetoresistive effect elements, in which the giant magnetoresistive effect elements to be paired are formed on a substrate in a state that the elements are connected mutually electrically with the orientations of magnetization axes of the pinned magnetic layers each facing the same direction in parallel, a magnetic coding member is rotatably supported to face the giant magnetoresistive effect elements on the substrate, and the magnetic coding member has a plurality of magnetic poles formed along the direction of rotation of itself.

Encoder provided with giant magnetoresistive effect elements

An apparatus for producing a metallic ribbon includes a cooling roll, a melt nozzle, and an air-cutoff unit provided to cover at least a portion of the periphery of the cooling roll and at least the melt blowout end of the melt nozzle, for preventing an inflow of air due to rotation of the cooing roll. The air-cutoff unit has a roll top air-cutoff plate provided above the cooling roll to extent from the front side to the rear side in the rotation direction of the cooling roll in such a manner that it approaches the cooling surface in the direction opposite to the rotation direction of the cooling roll. The melt blowout end of the melt nozzle is arranged to pass through a nozzle mounting hole provided in the roll top air-cutoff plate and face the cooling surface of the cooling roll.

Apparatus and method for producing metallic ribbon

A thin magnetic element comprising a coil pattern formed on at least one side of a substrate and a thin magnetic film formed on the coil pattern, wherein, assuming that the thickness and width of a coil conductor constituting the coil pattern are t and a, respectively, an aspect ratio t/a of the coil conductor satisfies the relationship 0.035&lE;t/a&lE;0.35, and the thin magnetic film has a resistivity of 400 &mgr;&OHgr;cm or more.

Thin magnetic element and transformer

A thin film magnetic head includes an upper core layer and a lower core layer which are made of an Fe&mdash;M&mdash;O alloy, an Fe&mdash;M&mdash;T&mdash;O alloy or an NI&mdash;Fe&mdash;X alloy so that the upper core layer has a high saturation magnetic flux density, low coercive force and high resistivity, and the lower core layer has a lower saturation magnetic flux density than the upper core layer, low coercive force, high resistivity, and a low magnetostriction constant. Also the lower core layer is formed so that the thickness gradually decreases toward both side ends, and a gap layer can be formed on the lower core layer to have a uniform thickness. Since the lower core layer is formed by sputtering, a material having excellent soft magnetic material can be used, thereby enabling recording at high frequency.

Combination magnetoresistive/inductive thin film magnetic head and its manufacturing method

The present invention is characterized in that a first giant magnetoresistive effect element and a second giant magnetoresistive effect element are provided along a first straight line with the magnetization of the pinned magnetic layer c oriented in a fixed direction, and that a third giant magnetoresistive effect element and a fourth giant magnetoresistive effect element are provided along a second straight line, which is parallel to the first straight line, with the magnetization of the pinned magnetic layer oriented 180&deg; opposite to the directions of magnetization of the pinned magnetic layers in the first and second giant magnetoresistive effect elements.

Magnetic field sensor having giant magnetoresistive effect elements, manufacturing method and apparatus therefor

A magnetostrictive material is produced by annealing an alloy consisting essentially of an amorphous phase and comprising Fe, Dy, and Tb as primary components, at least one element selected from the group consisting of Ta, Nb, Zr, Hf, V, W, Mo, Si and B and/or at least one element selected from the group consisting of Cr, Al, Ga, Ge, Cu, Au, Ag, Pt, Pd, Os, Ir, and Rh.

Magnetostrictive material

A magnet layer or antiferromagnetic thin film layer composed of a thin film serving as a bias magnetic field applying member is provided at both ends of a magnetic thin film having a magneto-impedance effect so that a bias magnetic field Hbi is applied to the magnetic thin film layer in parallel with the direction of application of an external magnetic field Hex to the magnetic thin film layer. As the magnetic thin film layer, a soft magnetic material having the composition Co,Ta,Hf,, Fe,R,O,, (Co,T,),M,O,X,, T,X,M,Z,Q,or T,Si,Al,M,Z,Q,is used.

Mageto-impedance effect element

A hard magnetic material contains Co as a main component, at least one element Q of P, C, Si and B, and Sm, and an amorphous phase and a fine crystalline phase. The texture of the hard magnetic material contains 50% by volume or more of fine crystalline phase having an average crystal grain size of 100 nm or less, and has a mixed phase state containing a soft magnetic phase and a hard magnetic phase. Further, anisotropy is imparted to the crystal axis of the hard magnetic phase.

Hard magnetic material

A magneto-impedance element comprises an alloy composed of at least one of Fe, Co and Ni. The alloy has a mixed texture of an amorphous phase and a fine crystalline phase having an average crystal grain size of 50 nm or less. The magneto-impedance element shows a change in impedance in response to an external magnetic field by applying an alternating current. The magneto-impedance element is applied to an azimuth sensor, an autocanceler, or a magnetic head.

Magneto-impedance element, and azimuth sensor, autocanceler and magnetic head using the same

The potentiometer of the present invention includes at least a pair of giant magnetoresistive effect elements, in which the giant magnetoresistive effect elements to be paired are formed on a substrate in a state that the elements are connected mutually electrically with the orientations of magnetization axes of the pinned magnetic layers facing 180&deg; opposite each other, and a magnetic coding member is rotatably provided to face the giant magnetoresistive effect elements on the substrate, the magnetic coding member is disposed in such a manner that the center of rotation of the magnetic coding member passes through an intermediate position of the giant magnetoresistive effect elements to be paired, and the magnetic coding member has at least two magnetic poles formed along the direction of rotation of itself.

Potentiometer provided with giant magnetoresistive effect elements

Hard magnetic alloy, hard magnetic alloy compact, and method for producing the same

Growing community of inventors

Niigata-ken, Japan

Takashi Hatanai