Mitsubishi Electric Corporation

Renesas Electronics Corporation

Mitsubishi Denki Kabushiki Kaisha

Pioneer Electronic Corporation

Renesas Technology Corp.

Adv Antest Corporation

Fuji Jukogyo Kabushiki Kaisha

Pioneer Corporation

Subaru Corporation

Mitsubishi Petrochemical Company Limited

Oki Electric Industry Co., Ltd.

Ngk Spark Plug Company, Limited

Schneider Electric Industries Sas

Hitachi, Ltd.

Ricoh Company, Ltd.

Takashi Hashimoto

Hiroyuki Takahashi

Takashi Shiraishi

Akihiko Iwata

Toshikazu Matsui

Tatsushi Sato

Takashi Yuzawa

Shinichiro Abe

Takahiro Inoue

Takahiro Urakabe

Takayuki Nakagawa

Yasutaka Inanaga

Akihiro Suzuki

Kazuo Kuroda

Yoshiaki Moriyama

Digh Hisamoto

Hiraku Chakihara

Akihiro Goto

Tetsuo Watanabe

Yasuhiro Takahashi

Takeshi Ogawa

Yoshiyuki Kawashima

Yasushi Ishii

Takeshi Morimoto

Jun Someya

Takashi Takahashi

Yutaka Sato

Minoru Hashimoto

Koji Wada

Koichi Kudo

Hiromichi Matsuda

Katsuaki Miyawaki

Shoji Yoshida

Kozo Watanabe

Kozo Katayama

Kimihiko Tanaya

Yuichi Yamada

Jun Yamane

Masashi Sahara

Hiroyuki Kameda

Takashi Nozaki

Yoshiaki Okuno

Junichi Shibata

Fumihito Masubuchi

Koichi Toba

Taichiro Tamida

Yoshikazu Ukai

Satoru Machida

Kentaro Saito

Takayoshi Nagai

Yasuo Onodera

Hideaki Yamakoshi

Hisashi Yamada

Yoshikazu Tsunoda

Munekatsu Nakagawa

Tomokazu Sakashita

Tsuyoshi Yamashita

Kosuke Okuyama

Atsushi Taneda

Hiroshi Iwane

Shigeki Harada

Masatoshi Yanagidaira

Hidetaka Miyake

Sadayuki Matsumoto

Akira Nakagawa

Noboru Wada

Shingo Tsuda

Yuto Sasaki

Makoto Takeda

Masamichi Fujito

Kenji Ban

Tomoya Saito

Hideaki Hayashi

Kiyohiro Obara

Shigeru Matsuno

Shinichi Masuda

Toshiyuki Yamamoto

Hiroaki Takeuchi

Takahiko Kobayashi

Hideyuki Takayama

Yuzuru Iwai

Takeo Saikatsu

Jean-Pierre Nereau

Masaaki Tanizaki

Kurato Maeno

Nobuyuki Sumi

Yoshiki Ono

Satoshi Hattori

Shinji Tanabe

Masakazu Takabayashi

Natsumi Matsue

Shinsuke Yura

Junichiro Hoshizaki

Takayuki Akiyama

Koichi Ando

Takuya Ohira

Shuhei Koyama

Kiichi Yoshiara

Ryota Asakura

An electronic component handling apparatus pressing the DUT against a socket electrically connected to a tester, includes: a first receiver that receives, from the tester, a first signal indicating a detection value of a temperature detection circuit; a calculator that calculates a temperature of the DUT based on the first signal; a calibrator that calibrates the calculated temperature; a second receiver that receives, from the tester, a second signal that causes the calibrator to start a first calibration; and a temperature adjuster that adjusts the temperature of the DUT. The second receiver receives the second signal before the tester turns on the DUT, once the second signal is received, the calibrator calculates a first calibrated temperature by executing the first calibration with respect to the calculated temperature, and the temperature adjuster adjusts the temperature of the DUT based on the first calibrated temperature.

Electronic component handling apparatus, electronic component testing apparatus, electronic component testing method

A vehicle rear-side structure is configured to ease an impact applied onto a battery pack of a vehicle upon an occurrence of a collision. The vehicle rear-side structure includes side frames and a rear-end-collision impact reducer. The side frames extend in a front-rear direction of the vehicle and are disposed at positions at which the side frames sandwich the battery pack therebetween in a widthwise direction of the vehicle. The rear-end-collision impact reducer is disposed between and above the side frames at a rear side of the battery pack. The rear-end-collision impact reducer is configured to allow air, which is to be sent to a battery stack included in the battery pack, to flow through the rear-end-collision impact reducer.

Vehicle rear-side structure

A battery pack includes a battery, a storage box, and a high voltage component. The storage box stores the battery, and includes a load transmitter. Here, the load transmitter is a component that transmits a load from a rear position to a front position in order to move the high voltage component forward at the time of a collision, the load being an impact energy generated upon a collision. The high voltage component is configured to be electrically coupled to the battery, structurally coupled to the load transmitter, and disposed forwardly of the battery within the storage box.

Battery pack

A semiconductor device has a split-gate type MONOS structure using a FinFET, and it includes a source and a drain each formed of an n-type impurity diffusion layer, a first channel forming layer which is formed under a control gate and is formed of a semiconductor layer doped with a p-type impurity, and a second channel forming layer which is formed under a memory gate and is formed of a semiconductor layer doped with an n-type impurity. Further, the semiconductor device includes a p-type semiconductor layer which is formed under the second channel forming layer and has an impurity concentration higher than an impurity concentration of a semiconductor substrate.

Semiconductor device

An additive manufacturing apparatus includes a laser oscillator that is a beam source that outputs a beam, and a rotary motor that is a driving unit that changes the relative positions of a material fed from a wire spool that is a supply source of a wire that is the material and an object to be machined. The driving unit is capable of performing first driving for feeding the material from the supply source toward the object to be machined and second driving for pulling back the fed material to the supply source, and switches from the first driving to the second driving on the basis of a machining program.

Additive manufacturing apparatus and numerical control device

A semiconductor device includes a memory cell which is configured of a FinFET having a split-gate type MONOS structure, the FinFET has a plurality of source regions formed in a plurality of fins, and the plurality of source regions are commonly connected by a source line contact. Further, the FinFET has a plurality of drain regions formed in the plurality of fins, the plurality of drain regions are commonly connected by a bit line contact, and the FinFET constitutes a memory cell of 1 bit.

An automatic vending machine includes: a belt conveyor constituting a part of a column configured to store a product, the belt conveyor being able to convey the stored product along the column, and a controller configured to control an operation of the belt conveyor. The controller acquires an amount of movement of a belt of the belt conveyor moving to convey the product. The controller calculates the number of products stored in the column, based on the acquired amount of movement of the belt.

Automatic vending machine

In a semiconductor device including a nonvolatile memory, information of a memory transistor of an unselected bit is accidentally erased during information write operation. A well region is provided in a memory region of a bulk region defined in a SOI substrate. A memory transistor having an LDD region and a diffusion layer is provided in the well region. A raised epitaxial layer is provided on the surface of the well region. The LDD region is provided from a portion of the well region located directly below a sidewall surface of a gate electrode to a portion of the well region located directly below the raised epitaxial layer. The diffusion layer is provided in the raised epitaxial layer.

Semiconductor device and method of manufacturing the same

A MONOS transistor as a first transistor can have improved reliability and a change in channel-width dependence of the property of a second transistor can be suppressed. The semiconductor device according to one embodiment includes a semiconductor substrate having first and second regions on the first main surface, an insulating film on the second region, a semiconductor layer on the insulating film, a memory transistor region in the first region, a first transistor region in the second main surface of the semiconductor layer, a first element isolation film surrounding the memory transistor region, and a second element isolation film surrounding the first transistor region. A first recess depth between the bottom of the first recess and the first main surface in the memory transistor region is larger than a second recess depth between the bottom of a second recess and the second main surface in the first transistor region.

Semiconductor device with recess and method of manufacturing the same

A differential electrical protection device D including N&#x2212;1 phase conductors, each phase conductor including, between an input, or upper, connection land and an output, or lower, connection land, a portion able to pass through a torus and a portion able to pass through a current measurement and supply sensor, the input connection lands being situated in a first plane P, and the output connection lands extending in a second plane P, in that the supply and measurement sensors of the N&#x2212;1 phase conductors are each positioned in the space situated between the two planes P,P, and wherein it includes an additional phase conductor including an input connection land and an output connection land, a portion able to pass through the torus and a portion able to pass through an additional measurement sensor only measuring the current, this additional measurement sensor being of small size and being positioned directly above the torus in such a way that the assembly formed by the torus and the additional sensor is situated substantially in the space between the two planes P,P

Differential electrical protection device that measures a differential current over a plurality of phase conductors

This invention is to improve a performance of a semiconductor device. The semiconductor device includes a semiconductor substrate, a p-type well region formed in the semiconductor substrate, a first insulating layer formed over the p-type well region, a semiconductor layer formed over the first insulating layer, a second insulating layer formed over the semiconductor layer, and a conductor layer formed over the second insulating layer. A first capacitive element is comprised of the semiconductor layer, the second insulating layer, and the conductor layer, while a second capacitive element is comprised of the p-type well region, the first insulating layer, and the semiconductor layer, in which each of the semiconductor substrate and the semiconductor layer includes a single crystal silicon layer.

Semiconductor device and manufacturing method thereof

A load board to which a socket is mounted is electrically connected to a tester. The load board includes a first optical communication unit capable of transmitting and/or receiving signals by optical wireless communication with an electronic component handling apparatus that presses a DUT against the socket.

Load board and electronic component testing apparatus

An ignition device according to the present invention includes: an ignition plug, which includes a first electrode, a second electrode, and a dielectric body arranged between the electrodes; an AC power supply configured to generate an AC voltage to be applied between the electrodes; a thermal plasma detection portion configured to output a thermal plasma occurrence signal when thermal plasma has occurred between the electrodes; and an application time period determination portion configured to determine an application time period for the AC voltage during one cycle of the internal combustion engine in advance before the application, and when the thermal plasma occurrence signal is received while the AC voltage is being applied based on the application time period, change the application time period so as to shorten the application time period.

Ignition device

Provided is an electrostatic capacitance detection device including: an electrode pair including a pair of electrodes, the electrode pair being arranged inside a compressor configured to compress refrigerant; a capacitor being connected in series to the electrode pair; an inverter having one of power lines connected to one end of series-connected electrode pair and capacitor, and is configured to drive the compressor, the power lines being used for driving the compressor; and a voltage detecting unit configured to measure a voltage between the pair of electrodes of the electrode pair.

Electrostatic capacitance detection device and power conversion apparatus

The manufacturing method of the semiconductor device includes a step of forming the gate dielectric film GIand the polysilicon layer PSon the main surface SUBa of the semiconductor substrate SUB, a step of forming the isolation trench TR in the semiconductor substrate SUB through the polysilicon layer PSand the gate dielectric film GIa step of filling the isolation trench TR with the dielectric film, and then a step of polishing the dielectric film to form the element isolation film STI in the isolation trench TR. Further, a method for manufacturing a semiconductor device comprises etching the element isolation film STI to retract the upper surface STIa of the element isolation film STI, then further depositing a polysilicon layer on the polysilicon layer PSto form a gate electrode using an anisotropic dry etching method.

Method for manufacturing a semiconductor device

Growing community of inventors

Tokyo, Japan

Takashi Hashimoto