Murata Manufacturing Co., Ltd.

Takashi Hase

Hiroaki Kaida

Toshio Nishimura

Keiichi Umeda

Takehiko Kishi

Shigeaki Sugimura

Takeshi Kamada

Toru Kidu

Keisuke Takeyama

Hiroshi Yamada

Hitoshi Sakaguchi

Jiro Inoue

Masanaga Nishikawa

Mitsuhiro Yamada

Hiroshi Kumano

Kaiza Makino

Taiki Goto

A quartz vibration element that includes: a quartz plate having first and second principal surfaces; first and second driving electrodes on the first and second principal surfaces, respectively, wherein when an X-axis, a Y-axis, and a Z-axis are defined as crystallographic axes of a quartz crystal of the quartz plate, an X'-axis and a Y′-axis are obtained by rotating the X-axis and the Y-axis about the Z-axis by a rotation angle φ, and a Y″-axis and a Z′-axis are obtained by rotating the Y′-axis and the Z-axis about the X′-axis by a rotation angle θ, the first and second principal surfaces are perpendicular to the Y″-axis, and when one of the first or second principal surfaces is viewed in plan and an angle ψ is between the X-axis and a long side of the quartz plate, the quartz plate satisfies both Ψ=α×φ×θ and −0.0165−0.016≤α≤−0.0165+0.016 or +0.0165−0.016≤α≤+0.0165+0.016.

Quartz vibration element and manufacturing method of quartz vibration element

A crystal vibration element that includes a crystal piece that has a prescribed crystal orientation, and a first direction and a second direction in a plan view thereof; and excitation electrodes that are respectively provided on front and rear surfaces of the crystal piece in order to excite a thickness shear vibration in the crystal piece upon application of an alternating electric field. A vibration distribution of the crystal piece has a vibration region that extends in a band-like shape in the second direction of the crystal piece and non-vibration regions that are adjacent to opposed sides of the vibration region in the first direction of the crystal piece.

Crystal vibration element, and crystal vibrator equipped with crystal vibration element

A vibration device that includes a vibration portion, a support portion connected to the vibration portion, a bending-vibrating portion connected to the support portion, and a frame-shaped base portion connected to the bending-vibration portion and disposed so as to surround the vibration portion. The base portion defines a slit that extends in a first direction crossing a second direction in which the support portion extends from the vibration portion, the slit defining first and second fixed ends of the bending-vibrating portion and which are continuous with the base portion. A length between a portion of the bending-vibrating portion connected to the support portion to one of the first and second fixed ends of the bending-vibrating portion is in a range of &#x3bb;/8 to 3&#x3bb;/8, where &#x3bb; denotes a wavelength of a bending vibration corresponding to a frequency of a characteristic vibration of the vibration portion.

Vibration device

A vibrating device that is in the form of a rectangular plate having opposed long sides and opposed short sides, and that utilizes an expanding and contracting vibration mode in a direction of the short sides. The vibrating device includes a Si layer made of a degenerate semiconductor, a silicon oxide layer, a piezoelectric layer, and first and second electrodes through which a voltage is applied to the piezoelectric layer. When a total thickness of the Si layer is denoted by T, a total thickness of the silicon oxide layer is denoted by T, and the TCF in the vibrating device when the silicon oxide layeris not provided is denoted by x(ppm/K), T/(T+T) is within a range of (&#x2212;0.0003x&#x2212;0.0256x+0.0008)&#xb1;0.05.

Vibrating device

A vibrating device having tuning fork arms extending in a first direction that are joined to a base portion and are arranged side by side in an second direction. Each of the tuning fork arms has a structure that a silicon oxide layer is laminated on a Si layer made of a degenerate semiconductor, and that an excitation portion is provided on the silicon oxide layer. When a total thickness of the Si layer is denoted by T, a total thickness of the silicon oxide layer is denoted by T, and the temperature coefficient of resonant frequency (TCF) when the silicon oxide layer is not provided on the Si layer is denoted by x, a thickness ratio T/(T+T) is within a range of (&#x2212;0.0002x&#x2212;0.0136x+0.0014)&#xb1;0.05.

A vibrating device having a number 2N (N is an integer equal to 2 or larger) of tuning fork arms extending in a first direction are arranged side by side in a second direction. Phases of flexural vibrations of the number N of tuning fork arms positioned at a first side of an imaginary line A, which passes a center of a region in the second direction where the number 2N of tuning fork arms are disposed and which extends in the first direction, are symmetric to phases of flexural vibrations of the number N of tuning fork arms positioned at a second side of the imaginary line opposite the first side.

A vibrating device having vibrating arms connected to a supporter. The vibrating arms have an n-type Si layer which is a degenerated semiconductor and an exciter provided on the n-type Si layer. The exciter has a piezoelectric thin film and a first and second electrodes with the piezoelectric thin film interposed therebetween.

Vibrating device and manufacturing method therfor

An electromechanical transducer that includes an elongating/contracting member and a driving member. The elongating/contracting member elongates and contracts in response to application of a voltage thereto. The elongating/contracting member has a side surface that is parallel to an elongation/contraction direction. The driving member is provided on the side surface of the elongating/contracting member. The driving member is displaced with elongation and contraction of the elongating/contracting member.

Electromechanical transducer and actuator

An energy trap piezoelectric resonator makes use of a harmonic wave in a thickness longitudinal vibration mode and can effectively suppress a spurious fundamental wave in a thickness longitudinal vibration mode without significantly suppressing the harmonic wave that is used for the resonator. The energy trap piezoelectric resonator has a first excitation electrode disposed at an upper surface of a piezoelectric substrate polarized in a thickness direction and a second excitation electrode disposed at a lower surface, and a floating electrode disposed at at least one of the upper surface and/or the lower surface of the piezoelectric substrate so as to extend towards and away from the first excitation electrode with respect to a node of an electric potential distribution based on electric charges generated by the fundamental wave that is propagated when an energy trap vibration portion where the excitation electrodes oppose each other is excited.

Energy trap piezoelectric resonator

An energy-trapping-type thickness extensional piezoelectric resonator using a thickness extensional vibration mode having first and second resonance electrodes formed on portions of the top surface and the bottom surface of a piezoelectric substrate that is polarized in the thickness direction thereof, respectively, in which a portion where the first and second resonance electrodes oppose each other is formed as an energy-trapping-type vibration section, wherein, in order to suppress frequency changes of the thickness extensional vibration mode due to temperature, which is a main response using resonance characteristics, a suppression response having a frequency-temperature-change tendency for suppressing frequency changes of the main response due to temperature is brought into close proximity with the main response.

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Nagaokakyo, Japan

Takashi Hase