Hitachi, Ltd.

Hitachi Haramachi Electronics Co., Ltd.

Other

Takashi Haramaki

Takao Funamoto

Akira Tanaka

Ryuichi Saito

Kazuji Yamada

Kazuhiro Suzuki

Nobuya Koike

Masahiro Koizumi

Jin Onuki

Yoshihiko Koike

Isao Kobayashi

Yasutoshi Kurihara

Mamoru Sawahata

Satoshi Kokura

Yutaka Higashimura

Tadao Kushima

Shigeki Sekine

Takashi Hosokawa

Hideo Shimizu

Hideya Kokubun

Yoshitaka Kojima

Masahisa Inagaki

Katsuyoshi Terakado

Masahiko Sakamoto

Teruhiro Takizawa

Kousei Nagayama

Toshimi Sasaki

Mitsuo Nakamura

Katsuhiko Shiota

Mituo Nakamura

Akira Tomita

Izumi Sakurai

Takeshi Yamagiwa

Ryutaro Jimbou

A semiconductor device in which electrodes of a plurality of semiconductor elements are bonded onto at least one of a plurality of electrode patterns on an insulator substrate, the other surface of the insulator substrate being bonded to a heat dissipating base. The upper surface of the heat dissipating base is covered with a member for cutting off the semiconductor elements from the outer environment. Terminals electrically connect the electrodes on said insulator substrate and the electrode placed outside the cutoff member. The material of the heat dissipating base has a linear expanding coefficient larger than that of the semiconductor element and smaller than three times that of the semiconductor element, and a thermal conductivity larger than 100 W/mK. The semiconductor elements are arranged on at least one electrode surface and in at least two regions divided by the other electrode surface on the insulator substrate.

Circuit board

Multi-core conductive wire and a method of manufacturing the same

A semiconductor device in which a plurality of semiconductor elements are bonded onto at least one electrode pattern on an insulator substrate formed a plurality of electrode patterns on the main surface, each of the electrodes of the semiconductor element being electrically connected to the electrode pattern, the other surface of the insulator substrate being bonded to a heat dissipating base, the upper surface of the heat dissipating base being covered with a member for cutting off the semiconductor elements from the outer environment, terminals electrically connecting the electrodes on said insulator substrate and the electrode placed outside the cutoff member being provided, wherein the material of the heat dissipating base has a linear expanding coefficient larger than the linear expansion coefficient of the semiconductor element and smaller than three times of the linear expansion coefficient of the semiconductor element, and a thermal conductivity larger than 100 W/mK, the semiconductor elements being arranged on at least one electrode surface and in at least two regions divided by the other electrode surface on the insulator substrate.

Semiconductor device

Semiconductor device having power semiconductor elements

A superconducting magnetic field generating apparatus, and coil, a superconducting wire, a method of producing a coil and a method of connecting a superconducting wire which are suitable for such a superconducting magnetic field generating apparatus are disclosed. The superconducting magnetic field generating apparatus has a coil of a wound superconducting wire which is composed of superconducting wires with the end portions thereof connected with each other. Each of the superconducting wires is composed of a plurality of superconducting material wires embedded in a stabilizing member. The group of superconducting material wires is embedded at the connecting portion in a state in which the superconducting material wires are densely gathered to the central portion of the stabilizing member and the superconducting material wires are directly in contact with each other. The stabilizing member exists in the central portion of the assembly of the superconducting material wires and the stabilizing members are closely bonded to the superconducting material wires.

Superconducting magnetic field generating apparatus and method of

A high heat resisting wire (5) is made of amide-imide-coated wire, and a conductive terminal (4) is made of Cu or Cu alloy such as brass P-containing solder, BAg-1, BAg-2 are used as joining assistant (4). A high heat resisting wire (5) is made of an amide-imide-coated wire and a conductive terminal (3) is made of soft steel or SUS steel, a silver-solder is used as joining assistant (4). A metallic joining conductive layer (8) is formed between a Cu core wire (7) of the insulated wire (5) and the conductive terminal (3 ) with the joining assistant (4). The insulated wire (5) is joined to the conductive terminal (3) and a joined body having high joining strength can be obtained.

Method of joining an insulated wire to a conductive terminal

Disclosed is a diffusion bonding method which can be applied to superalloys and comprises forming in advance an alloy layer containing an additional element or elements having a higher diffusion speed than that of the principal constituent element of a base metal and a lower melting point than that of the base metal on the joint surface of the base metal consisting of a heat-resistant superalloy based on Co, Ni, Fe, Ti or the like, and bringing the joint surfaces into contact so as to diffuse B.

Diffusion bonding method using a high energy beam

A heat exchanger and a method of manufacturing a heat exchanger by brazing metal members mainly made of Al or Al alloy is disclosed. The heat exchanger has a plurality of brazed metal members, at least one of the brazed metal members being made of brazing sheet clad with a brazing material. The brazed portions of the metal members or the whole surface of the heat exchanger are coated with a corrosion-resistant fluoride flux consisting essentially of 25-40% KF, 38-54% AlF3 and 3-30% ZnF2 by weight which forms a corrosion-inhibiting metallic film.

Method of brazing an aluminum heat exchanger

Growing community of inventors

Tokai-mura, Japan

Takashi Haramaki