Sanyo Electric Co., Ltd.

Takashi Goto

Hideki Mizuhara

Naoteru Matsubara

Yoshiyuki Ishizuka

Hiroaki Furukawa

Shingo Terakado

Mitsuaki Harada

Yoshinari Ichihashi

Tatsuro Gueshi

Satoru Ogasahara

A semiconductor device capable of compatibly suppressing a microloading effect (irregular etching) and over-etching also in formation of a fine contact hole requiring a high aspect ratio is obtained. This semiconductor device comprises a first conductive part, an insulator film having an opening formed on the first conductive part and a second conductive part electrically connected with the first conductive part through the opening. The insulator film includes an upper insulator film and a lower insulator film, stacked/formed at least around a connection part between the first conductive part and the second conductive part, consisting of different materials. Thus, when employing a material having a higher etching selection ratio than the upper insulator film for the lower insulator film, the first conductive part is prevented from over-etching also when etching is performed through a high-concentration plasma device with which a high etching selection ratio of the first conductive part is hard to attain for suppressing a microloading effect (irregular etching).

Semiconductor device having opening and method of fabricating the same

A semiconductor device capable of inhibiting a conductive plug from increase of resistance or disconnection resulting from moisture discharged from a first insulator film while reducing the capacitance between adjacent first interconnection layers is obtained. This semiconductor device comprises a plurality of first interconnection layers formed on a semiconductor substrate at a prescribed interval, a first insulator film, formed to fill up the clearance between the plurality of first interconnection layers, having an opening reaching the first interconnection layers and a conductive plug charged in the opening of the first insulator film and formed to be in contact with the first interconnection layers. An impurity is selectively introduced into a first region of the first insulator film in the vicinity of contact surfaces between the first interconnection layers and the conductive plug, thereby selectively modifying the first region of the first insulator film.

Semiconductor device comprising an interconnect structure with a modified low dielectric insulation layer

A gate insulating layer and a first lower electrode are formed on a channel region of a silicon substrate, and an interlayer insulating film is formed on the silicon substrate so as to cover the first lower electrode and the gate insulating film. A buffer layer is formed on the interlayer insulating film, and a contact hole is formed in the interlayer insulating film and the buffer layer on the first lower electrode. A connecting layer and a second lower electrode are formed in the contact hole. A ferroelectric thin film and an upper electrode are formed in this order on the buffer layer so as to be brought into contact with the upper surface of the second lower electrode.

Dielectric device, dielectric memory and method of fabricating the same

A stencil mask for use in a photochemical reaction process includes a path extending between the rear and front surfaces thereof. The path is used with a window for passing photons so as to supply a reactive medium and discharge an exhaust medium containing reaction products. Further, the path also serves as a space for separating an object from a pattern on a mask substrate. The path has a depth which is smaller than a minimum value attained by a semiconductor manufacturing process.

Stencil mask

A method for manufacturing a stencil mask in provided, in which precise patterning and a sufficient thickness of the absorber film are ensured, and manufacturing steps are simplified. Temporary holes 1h are formed on the substrate 1 based on the precise mask pattern of the intermediate film 2. The absorber film 3 is formed on the intermediate film 2, while an extra portion of the absorber film is deposited and stored in the temporary holes 1h. The absorber film 3 is made sufficiently thick while maintaining the precise patterning of the intermediate film 2. A window 6 is formed from the rear surface of the substrate penetrating through the substrate, through which beams pass. The temporary holes 1h and the extra portion of the absorber film are naturally removed during the forming of the window 6.

Growing community of inventors

Ogaki, Japan

Takashi Goto