Fujifilm Corporation

The University of Tokyo

Ricoh Company, Ltd.

Takashi Goto

Tetsuya Watanabe

Hideyuki Suzuki

Eiji Fukuzaki

Yoshihisa Usami

Junichi Takeya

Nobuo Suzuki

Hiroo Takizawa

Yoshiki Maehara

Toshihiro Okamoto

Hiroaki Tsuyama

Masashi Koyanagi

Toshihiro Nakatani

Shigeru Nakamura

Tetsu Kitamura

Naoki Shimizu

Susumu Fujioka

Yosuke Yamamoto

Daigo Sawaki

Yuta Shigenoi

Takeshi Senga

Tomohito Kajiwara

Fumiko Tamakuni

Takashi Komiyama

Takehiro Kasahara

Kiyohiko Tsutsumi

Kyohei Ogawa

Provided are an organic semiconductor film, an organic semiconductor transistor formed of the organic semiconductor film, and a method of manufacturing the organic semiconductor transistor. In the organic semiconductor film, the formation or propagation of cracks can be effectively suppressed even in a case where the organic semiconductor film is patterned or is exposed to high heat. Provided are an organic semiconductor film, an organic semiconductor transistor formed of the organic semiconductor film, and a method of manufacturing the organic semiconductor transistor. The microcrystalline organic semiconductor film includes a compound represented by the following Formula (1) that has a molecular weight of 3000 or lower and in which a crystal domain size is 1 nm to 100 nm.  X, Y, and Z each independently represent a specific ring-constituting atom. Rand Reach independently represent a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, an aryl group, or a heteroaryl group. Rand Reach independently represent a halogen atom, an alkyl group, an alkenyl group, an alkynyl group, an aryl group, or a heteroaryl group. m and n each independently represent an integer of 0 to 2.

Microcrystalline organic semiconductor film, organic semiconductor transistor, and method of manufacturing organic semiconductor transistor

A compound which, when used for organic semiconductor films in organic thin-film transistors, makes the organic thin-film transistors exhibit a high carrier mobility, a material for an organic thin-film transistor for which the compound is used, a composition for an organic thin-film transistor, an organic thin-film transistor and a method for manufacturing the same, and an organic semiconductor film. The organic thin-film transistor contains a compound represented by General Formula (1) in an organic semiconductor film (organic semiconductor layer) thereof. 

Organic thin-film transistor and method for manufacturing the same, material for organic thin-film transistor, composition for organic thin-film transistor, compound, and organic semiconductor film

An object of the present invention is to provide an organic thin-film transistor which has an organic semiconductor film produced using a compound having an excellent solubility in organic solvents and has an excellent carrier mobility, a compound, a material for an organic thin-film transistor for which the compound is used, a composition for an organic thin-film transistor, a method for manufacturing an organic thin-film transistor, and an organic semiconductor film. An organic thin-film transistor of the present invention contains a compound which is represented by General Formula (1) or General Formula (2) in an organic semiconductor film (organic semiconductor layer) thereof and has a molecular weight of 3,000 or less.  In General Formula (1) and General Formula (2), at least one of R, . . . , or Ris a group other than a hydrogen atom.

Objects of the present invention are to provide an organic semiconductor element in which carrier mobility is high, variation of mobility is suppressed, and temporal stability under high temperature and high humidity is excellent, and a manufacturing method thereof, to provide a novel compound suitable for an organic semiconductor, and to provide an organic semiconductor film in which mobility is high, variation of mobility is suppressed, and temporal stability under high temperature and high humidity is excellent, a manufacturing method thereof, and an organic semiconductor composition that can suitably form the organic semiconductor film. The organic semiconductor element according to the present invention is an organic semiconductor layer containing a compound having a constitutional repeating unit represented by Formula 1 and having a molecular weight of 2,000 or greater.D-A&#x2003;&#x2003;(1)

Organic semiconductor element, manufacturing method thereof, compound, organic semiconductor composition, organic semiconductor film, and manufacturing method thereof

An object of the present invention is to provide a compound which, when used for organic semiconductor films in organic thin-film transistors, makes the organic thin-film transistors exhibit a high carrier mobility, a material for an organic thin-film transistor for which the compound is used, a composition for an organic thin-film transistor, an organic thin-film transistor and a method for manufacturing the same, and an organic semiconductor film. An organic thin-film transistor of the present invention contains a compound represented by General Formula (1) in an organic semiconductor film (organic semiconductor layer) thereof. 

A system including a first output apparatus and a second output apparatus that are connected to an information processing apparatus via a network and includes a job generating unit that generates a plurality of jobs that instruct the execution of processing to exchange a first age output to the first output apparatus for a second image output to the second output apparatus based on an image exchange instruction received on a screen that receives user operations and a job execution instructing unit that instructs the first output apparatus and the second output apparatus to execute the processing to exchange the first image for the second image based on the jobs.

System to control output of images to multiple devices in a network

The invention is directed to a solid-state imaging device in which pixels each including a photoelectric conversion portion formed above a semiconductor substrate and an MOS type signal reading circuit as defined herein are arranged in an array form, wherein: the photoelectric conversion portion includes a pixel electrode, a counter electrode and a photoelectric conversion layer as defined herein; a bias voltage is applied to the counter electrode as defined herein; the signal reading circuit includes a charge storage portion, an output transistor and a protection circuit as defined herein; the protection circuit has an impurity region as defined herein; the output transistor has an impurity region as defined herein; and the impurity regions of the protection circuits and the impurity regions of the output transistors are used in common to every adjacent two of the pixels as defined herein.

Solid-state imaging device and imaging apparatus

The invention is directed to a solid-state imaging device in which pixels each including a photoelectric conversion portion formed above a semiconductor substrate and an MOS type signal reading circuit formed at the semiconductor substrate and provided for reading out a signal corresponding to electric charges generated in the photoelectric conversion portion are disposed in an array form, wherein: the photoelectric conversion portion includes a pixel electrode, a counter electrode and a photoelectric conversion layer as defined herein; a bias voltage is applied to the counter electrode as defined herein; the signal reading circuit includes a charge storage portion, an output transistor and a reset transistor as defined herein; the charge storage portion includes a first charge storage region, a second charge storage region and a separation/connection region as defined herein; and the output transistor outputs a signal corresponding to the potential of the second charge storage region.

A solid-state image pickup device includes a plurality of effective pixels each including a photoelectric conversion element and an OB pixel that is provided outside of an area where the effective pixels are formed and obtains the same output with a dark output of the effective pixel. Each of the effective pixels includes a first signal read-out circuit formed on a semiconductor substrate. The OB pixel includes a second signal read-out circuit formed on the semiconductor substrate and a capacitor connected to an input node of the second signal read-out circuit. The second signal read-out circuit has the same configuration as the first signal read-out circuit. A capacitance value of the capacitor is a value that renders the capacitance value at the input node of the first signal read-out circuit and the capacitance value at the input node of the second signal read-out circuit to be substantially equal to each other.

Solid-state image pickup device and image pickup apparatus

A solid-state imaging device includes a photoelectric conversion layer, a MOS transistor circuit. The photoelectric conversion layer is formed over a semiconductor substrate. The MOS transistor circuit reads out a signal corresponding to charges generated in the photoelectric conversion layer and then collected, and that is formed in the semiconductor substrate, the charges having a given polarity. The MOS transistor circuit includes a charge accumulation portion, a reset transistor, and an output transistor. The charge accumulation portion is electrically connected with the photoelectric conversion layer. The reset transistor resets a potential of the charge accumulation portion to a reset potential. The output transistor outputs a signal corresponding to the potential of the charge accumulation portion. The reset transistor and the output transistor have carriers whose polarity is opposite to the given polarity. In the MOS transistor circuit, following formula (1) is satisfied: GND&#x3c;Vs&#x3c;GND+&#x394;V2+(Vdd/5) . . . (1).

A solid-state imaging device includes an array of pixels, each pixel includes: a pixel electrode; an organic layer; a counter electrode; a sealing layer; a color filter; a readout circuit; and a light-collecting unit as defined herein, the photoelectric layer contains an organic p type semiconductor and an organic n type semiconductor, the organic layer further includes a charge blocking layer as defined herein, an ionization potential of the charge blocking layer and an electron affinity of the organic n type semiconductor in the photoelectric layer has a difference of at least 1 eV, and the sealing layer includes a first sealing sublayer formed by atomic layer deposition and a second sealing sublayer formed by physical vapor deposition and containing one of a metal oxide, a metal nitride, and a metal oxynitride.

Solid-state imaging device, process of making solid state imaging device, digital still camera, digital video camera, mobile phone, and endoscope

A solid-state imaging device includes a substrate, a dielectric layer on the substrate, and an array of pixels, each of the pixels includes: a pixel electrode, an organic layer, a counter electrode, a sealing layer, a color filter, a readout circuit and a light-collecting unit as defined herein, the photoelectric layer contains an organic p-type semiconductor and an organic n-type semiconductor, the organic layer further includes a charge blocking layer as defined herein, an ionization potential of the charge blocking layer and an electron affinity of the organic n-type semiconductor present in the photoelectric layer have a difference of at least 1 eV, and a surface of the pixel electrodes on a side of the photoelectric layer and a surface of the dielectric layer on a side of the photoelectric layer are substantially coplanar.

Process of making a solid state imaging device

An image pickup device includes a plurality of first electrodes, a second electrode, a third electrode, a photoelectric conversion layer, a plurality of signal reading portions, at least one of electric potential adjusting portions. The plurality of first electrodes is arranged on an upper side of a substrate in two dimensions with a predetermined gap interposed between one of the first electrodes and another first electrode adjacent to the one of the first electrode. The second electrode is arranged next to the first electrodes arranged on an outermost side of the first electrodes with the predetermined gap interposed between the first electrodes arranged on the outermost side and the second electrode. The third electrode faces both of the plurality of first electrodes and the second electrode. The photoelectric conversion layer is disposed between the plurality of first electrodes and the second electrode and the third electrode.

Image pickup device and image pickup apparatus

A solid-state imaging device includes a photoelectric conversion layer, a MOS transistor circuit. The photoelectric conversion layer is formed over a semiconductor substrate. The MOS transistor circuit reads out a signal corresponding to charges generated in the photoelectric conversion layer and then collected, and that is formed in the semiconductor substrate, the charges having a given polarity. The MOS transistor circuit includes a charge accumulation portion, a reset transistor, and an output transistor. The charge accumulation portion is electrically connected with the photoelectric conversion layer. The reset transistor resets a potential of the charge accumulation portion to a reset potential. The output transistor outputs a signal corresponding to the potential of the charge accumulation portion. The reset transistor and the output transistor have carriers whose polarity is opposite to the given polarity. In the MOS transistor circuit, following formula (1) is satisfied:2+(/5)&#x2003;&#x2003;(1).

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Kanagawa, Japan

Takashi Goto