Tokyo Electron Limited

Daikin Industries, Ltd.

Iwatani Corporation

Takashi Fuse

Koji Takeya

Kyo Tsuboi

Tadashi Kotsugi

Kiwamu Fujimoto

Tomoyo Yamaguchi

Yasuo Itami

Madoka Okkotsu

Hidetoshi Kinoshita

Tatsuya Fukasawa

Masanobu Honda

Kazuya Nagaseki

Kazuya Dobashi

Akinori Kitamura

Takashi Namikawa

Takashi Enomoto

Daisuke Nishide

Katsuhiko Iwabuchi

Masato Morishima

Akiteru Koh

Madoka Fujimoto

Hiroharu Ito

Jae Young Jeong

Kiwami Fujimoto

A film formation method includes: a step of preparing a substrate including a layer of a first material formed on a surface in a first region, and a layer of a second material formed on a surface in a second region; a first SAM formation step of forming a first self-assembled monolayer in the first region by supplying a raw material gas for the first self-assembled monolayer, wherein the raw material gas corresponds to the first material; and a second SAM formation step for forming a second self-assembled monolayer including an organic acid group or a second self-assembled monolayer including a condensable group on top of the first self-assembled monolayer in the first region by supplying a first gas, which includes an organic acid group, while including a self-assembling molecule, or by supplying a second gas, which includes a condensable group, while including a self-assembling molecule.

Film formation method

A film forming method is a method of forming a film on a substrate top face including a first region in which a metal or a semiconductor is exposed and a second region in which an insulator is exposed. The method includes a SAM forming process of forming a self-assembled monolayer film of a perfluoropolyether group-containing compound on the first region and a film growth process of forming a predetermined film on the second region after execution of SAM forming process.

Film forming method and film forming apparatus

A surface-treating agent including a fluorine-containing compound having a carbon-carbon unsaturated bond at its molecular terminal as a group of &#x2014;Y-A wherein Y is a single bond, an oxygen atom or a divalent organic group, and A is &#x2014;CH&#x2550;CHor &#x2014;C&#x2261;CH, which is able to form a layer having higher alkaline resistance.

Antifouling composition, treatment device, treatment method, and treated article

A surface-treating agent for a nitrided surface, including a fluorine-containing compound having a carbon-carbon unsaturated bond at its molecular terminal as a group of &#x2014;Y-A wherein Y is a single bond, an oxygen atom or a divalent organic group, and A is &#x2014;CH&#x2550;CHor &#x2014;C&#x2261;CH. Also disclosed is an article treated with the surface-treating agent, a method for forming a surface-treating layer on a surface of a base material, a surface-treating layer forming apparatus, and a process for producing an article including a base material and a surface-treating layer coating a surface of the base material.

Antifouling treatment composition, treating apparatus, treating method and treated article

A plasma electrode is provided with an electrode plate, a ground plate, and an insulating plate arranged between the electrode plate and the ground plate. Protrusions of the electrode plate are arranged inside through holes of the ground plate and inside through holes of the insulating plate. One of the through hole provided on the center axes of the protrusions and the through hole provided around the through hole discharges a first processing gas to below the ground plate. The other of the through holes exhausts a gas existing below the ground plate. A second flow path around the protrusions supplies a second processing gas supplied via a first flow path to a gap between outer walls of the protrusions and inner walls of the through holes. The second processing gas supplied to the gap is converted into plasma by high frequency power applied to the electrode plate.

Plasma electrode and plasma processing device

A substrate cleaning device is capable of removing more diverse contaminants from substrates than ultra-low temperature aerosol ejection, while avoiding technical problems inherent to wet cleaning, such as micro-roughness, watermarks, loss of substrate material and destruction of the device structure. A substrate cleaning device for cleaning wafers to which cleaning target objects have adhered includes a cluster spraying unit which sprays the wafer with one or more types of clusters formed of cleaning preparation molecules agglomerated together, a suction unit which sucks the cleaning target objects separated by spraying the clusters of the cleaning agent molecules; and a unit for moving the wafer and the cluster spraying unit relative to the one another along the surface of the wafer W to which the cleaning target objects have adhered.

Substrate cleaning apparatus and substrate cleaning method

A substrate processing apparatus which irradiates a substrate under processing with an electron beam and processes the substrate with the electron beam is disclosed. The substrate processing apparatus includes an electron beam generation mechanism which generates the electron beam, first area having a plurality of first static electricity deflecting devices whose thicknesses gradually increase in a traveling direction of the electron beam, and a second area disposed on a downstream side of the electron beam of the first area and having a plurality of second static electricity deflecting devices whose thicknesses are nearly same in the traveling direction of the electron beam. The substrate processing apparatus may further include a plurality of lenses whose thicknesses gradually decrease in the traveling direction of the electron beam, at least one of the plurality of lenses being disposed in each of the first area and the second area.

Static electricity deflecting device, electron beam irradiating apparatus, substrate processing apparatus, substrate processing method, and method of manufacturing substrate

Static electricity deflecting device, electron beam irradiating apparatus, substrate processing apparatus, substrate processing method and method of manufacturing substrate

An object to be process has a structure having an SiC filmand an organic Si-low dielectric constant filmformed on the SiC film. The SiC filmis etched using a plasma produced from an etching gas and using the organic Si low-dielectric constant filmas a mask. The etching gas contains CHFor CHF.

Method for etching an object to be processed

A plasma processing method includes a step of preparing a process subject having an organic layer on a surface thereof, and a step of irradiating the process subject with Hplasma to improve plasma resistance of the organic layer.

Plasma processing method

An object to be processed has a structure having an SiC film and an organic Si-low dielectric constant film formed on the SiC film. The SiC film is etched using a plasma produced from an etching gas and using the organic Si low-dielectric constant film as a mask. The etching gas contains CHFor CHF.

Method for etching object to be processed

A plasma processing method is conducted while a thickness of a resist film being monitored, thereby preventing the thickness of the resist film from being reduced. The plasma processing method includes steps of supplying a processing gas into an airtight processing chamber, and plasma-processing a target layer formed on an object to be processed by using a resist film as a mask. The method includes a main etching process (first process) of plasma-processing the target layer while the thickness of the resist film being monitored until the reduction rate of the thickness of the resist film reaches a predetermined value, and an over-etching process (second process) of plasma-processing the target layer in a changed process condition in which selectivity against the resist film is higher than in the first process.

A plasma etching method is performed by plasma etching an SiN layer through a mask layer to form a first wiring portion and a second wiring portion, the first and the second wiring portions having different wiring densities in the etched SiN layer, the mask having two pattern portions respectively corresponding to the first and the second wiring portions. In the plasma etching step, by using an etching gas including fluorocarbon and CHF, the line width variation between the first and the second wiring portions is restrained.

Growing community of inventors

Nirasaki, Japan

Takashi Fuse