Merck Patent Gmbh

Az Electronic Materials (luxembourg) S.a.r.l.

Marck Patent Gmbh

Takashi Fujiwara

Tatsuro Nagahara

Mansour Moinpour

Yuji Tashiro

Ralf Grottenmueller

Atsuhiko Sato

Naoko Nakamoto

Takashi Kanda

Hiroyuki Aoki

Jun Yamakawa

Hideyuki Takagishi

[Problem] According to the present invention, a silicon-containing film forming composition having a high affinity for a substrate can be provided. [Means for Solution] A silicon-containing film forming composition comprising (I) a polymer having a polysilane skeleton comprising a particular repeating unit. (II) a carbodiimide compound having a particular structure, and (III) a solvent.

Silicon-containing film forming composition and method for manufacturing silicon-containing film using the same

To provide an amorphous silicon forming composition, which has high affinity with a substrate, is excellent in filling properties, and is capable of forming a thick film. [Means for Solution] An amorphous silicon forming composition comprising: (a) a block copolymer comprising a linear and/or cyclic block A having a polysilane skeleton comprising 5 or more silicon and a block B having a polysilazane skeleton comprising 20 or more silicon, wherein at least one silicon in the block A and at least one silicon in the block B are connected by a single bond and/or a crosslinking group comprising silicon, and (b) a solvent.

Amorphous silicon forming composition comprising block copolymer and method for producing amorphous silicon film using same

The present invention provides a method for producing a novel amorphous silicon sacrifice film and an amorphous silicon forming composition capable of filling trenches having a high aspect ratio to form an amorphous silicon sacrifice film that is excellent in affinity with a substrate. A method for producing an amorphous silicon sacrifice film, comprising (i) polymerizing a cyclic polysilane comprising 5 or more silicon or a composition comprising the cyclic polysilane by light irradiation and/or heating to form a polymer having a polysilane skeleton, (ii) applying an amorphous silicon forming composition comprising said polymer having a polysilane skeleton, polysilazane and a solvent above a substrate to form a coating film, and (iii) heating the coating film in a non-oxidizing atmosphere.

Method for producing amorphous silicon sacrifice film and amorphous silicon forming composition

To provide a siliceous film manufacturing composition that can fill a narrow and a high aspect ratio trench and can produce a thick siliceous film. [Means for Solution] The present invention provides a siliceous film manufacturing composition that comprises, (a) a block copolymer having a linear and/or cyclic polysilane backbone block with or more silicon atoms and a polycarbosilane backbone block with or more silicon atoms, and (b) a solvent.

Composition comprising block copolymer, and method for producing siliceous film using the same

[Problem] To provide a novel polymer, which fills trenches having narrow widths and high aspect ratios and can form a thicker film. [Means for Solution] The block copolymer comprises a linear or cyclic block A having a polysilane skeleton comprising 5 or more silicon and a block B having a polysilazane skeleton comprising 20 or more silicon.

Block copolymer comprising block having polysilane skeleton and block having polysilazane skeleton

According to the present invention, a siliceous film forming composition, which is capable of filling trenches having narrow widths and high aspect ratios and forming a thick film, can be provided. A siliceous film forming composition comprising: (a) a block copolymer comprising a linear and/or cyclic block A having a polysilane skeleton comprising 5 or more silicon and a block B having a polysilazane skeleton comprising 20 or more silicon, and (b) a solvent.

Silicous film forming composition comprising block copolymer and method for producing siliceous film using same

A copolymerized polysilazane comprising at least repeating units represented by general formula (I): &#x2014;Si(R)(R)&#x2014;NR&#x2014; and repeating units represented by general formula (II): &#x2014;Si(R)(R)&#x2014;NH&#x2014; (in the formulas, Rand Reach independently represent a hydrogen atom, hydrocarbon group, hydrocarbon group-containing silyl group, hydrocarbon group-containing amino group, or hydrocarbon oxy group, and Rrepresents an alkyl group, alkenyl group, alkoxy group, cycloalkyl group, aryl group or alkyl silyl group), and the NR/SiHratio (SiHrepresents the total amount of SiHand SiH) is 0.005-0.3. Said copolymerized polysilazane can be manufactured by reacting Si(R)(R)X(in the formula, X represents a halogen atom) with a primary amine compound: RNHand then reacting with ammonia, and is able to form a siliceous film that has withstand voltage characteristics and solvent resistance by curing at a low temperature.

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Kakegawa, Japan

Takashi Fujiwara