Cosmo Oil Co., Ltd.

Sumco Corporation

Cosmo Research Institute

Sumitomo Mitsubishi Silicon Corporation

Sumco Techxiv Corporation

Petpoleum Energy Center

Takashi Fujikawa

Kazushi Usui

Katsuyoshi Ohki

Minoru Hashimoto

Masayuki Ishibashi

Masahiro Kato

Takayuki Dohi

John F Krueger

Daizo Horie

Hiroshi Kimura

Nobumasa Nakajima

Kazuyuki Kiriyama

Seiji Sugimoto

Hatsutaro Yamazaki

Takayuki Osaki

Kazuhiro Iriguchi

Hirofumi Mizuguchi

Kazuo Idei

Kouhei Kawano

Motoki Yoshinari

Hiroyasu Tagami

Osamu Chiyoda

Mitsugu Yumoto

Etsuo Suzuki

Yoshinori Kato

Shunji Kitada

Kazuhiro c/o Sumco Techxiv Corp Iriguchi

Kouhei c/o Sumco Techxiv Corp Kawano

A hydrodesulfurization catalyst supports one or more metals selected from elements in Group 6 of the Periodic table, one or more metals selected from elements in Group 9 or Group 10 of the same, phosphorus, and an organic acid on a composite oxide support having a specific content of both alumina and HY zeolite having a specific crystallite size. The catalyst includes 10% to 40% by mass of the Group 6 metal, 1% to 15% by mass of the Group 9 or Group 10 metal, and 1.5% to 8% by mass of phosphorus in terms of an oxide based on the catalyst. The catalyst includes 0.8% to 7% by mass of carbon derived from an organic acid and for 1 mole of the Group 9 or Group 10 element metal in terms of an element based on the catalyst, and includes 0.2 to 1.2 moles of the organic acid.

Hydrodesulfurization catalyst for diesel oil and hydrotreating method for diesel oil

A method for growing an epitaxial film on a surface of a semiconductor wafer by mounting the wafer within a susceptor pocket and supplying source gas and carrier gas to the upper surface side of the susceptor and supplying carrier gas to the lower surface side of the susceptor. The susceptor includes a substantially circular bottom wall and a sidewall encompassing the bottom wall to form a pocket for mounting the wafer, wherein a plurality of circular through-holes are formed in the bottom wall in an outer peripheral region a distance of up to about &#xbd; the radius toward the center of the bottom wall. The total opening surface area of the through-holes is 0.05 to 55% of the surface area of the bottom wall, the opening surface area of each through-hole is 0.2 to 3.2 mmand the density of the through-holes is 0.25 to 25 per cm.

Epitaxial growth method

There is provided a susceptor for a vapor phase epitaxial growth device, by which skidding at the time of loading a silicon wafer is prevented and the wafer can be loaded at a fixed position of the susceptor: wherein a ring-shaped groove having sloping planes widening toward a surface of the susceptor are formed on the outermost circumference of the bottom surface; and gas release openings penetrating through to the back surface of the susceptor are formed, each having a sectional area of 2.0 to 3.0 mmand a ratio of all opening areas is 0.25 to 0.5% on the bottom surface.

Susceptor for vapor phase epitaxial growth device

A susceptor for use in an epitaxial growth apparatus and method where a plurality of circular through-holes are formed in the bottom wall of a pocket in an outer peripheral region a distance of up to about &#xbd; the radius toward the center of the circular bottom wall. The total opening surface area of these through-holes is 0.05 to 55% of the surface area of the bottom wall. The opening surface area of each of the through-holes provided at this outer peripheral region is 0.2 to 3.2 mmand the density of the through-holes is 0.25 to 25 per cm. After a semiconductor wafer is mounted in the pocket, epitaxial growth is carried out while source gas and carrier gas (i.e., reactive gas) is made to flow on the upper surface side of the susceptor and carrier gas is made to flow on the lower surface side.

Epitaxial growth susceptor

An annular step portion provided to a periphery of a wafer housing portion is provided to an area with which an area of 1 to 6 mm from a boundary line with a chamfered surface of a wafer rear surface toward a wafer center comes in contact. As a result, it is possible to produce an epitaxial wafer having no scratch in a boundary area between the rear surface and the chamfered surface, and to eliminate particles generated due to a scratch in a device process.

Epitaxial film growing method, wafer supporting structure and susceptor

An object of the present invention is to provide a catalyst for hydrodesulfurization/dewaxing of a hydrocarbon oil, with which sulfur compounds in the hydrocarbon oil can be desulfurized to a high degree and which simultaneously is extremely effective in reducing the wax deposit content; a process for producing the catalyst; and a method of hydrotreatment with the catalyst. The invention relates to a catalyst for hydrodesulfurization/dewaxing of a hydrocarbon oil, comprising a support comprising an inorganic oxide containing at least one crystalline aluminosilicate having a one- or two-dimensional pore path system and, having provided thereon, 10 to 35% by mass of a metal in Group 6 of the Periodic Table, 1 to 10% by mass of a metal in Group 8 of the Periodic Table, and 1.5 to 6% by mass of phosphorus in terms of oxide amount on the basis of the catalyst and further containing 2 to 14% by mass of carbon derived from an organic acid in terms of element amount on the basis of the catalyst, wherein the content of the crystalline aluminosilicate having a one-or two-dimensional pore path system in the support is 3 to 25% by mass on the basis of the support; a process for producing the catalyst; and a method of hydrotreatment with the catalyst.

Catalyst for hydrodesulfurization/dewaxing of hydrocarbon oil, process for producing the same, and method of hydrotreating hydrocarbon oil with the catalyst

There is provided a catalyst for hydrotreating a hydrocarbon oil, which comprises an inorganic oxide support containing a certain amount of phosphorus oxide having provided thereon: at least one selected from metals in the Group 6 of the periodic table, at least one selected from metals in the Group 8 of the periodic table, and carbon, and which has a certain specific surface area, pore volume, and mean pore diameter, a process for producing the same, and a method for hydrotreating a hydrocarbon oil using the same. Thereby, the catalyst can be produced in a simple and convenient manner and sulfur compounds in the hydrocarbon oil can be exceedingly highly desulfurized and simultaneously nitrogen compounds can be diminished without necessitating severe operating conditions.

Catalyst for hydrotreating hydrocarbon oil, process for producing the same, and method for hydrotreating hydrocarbon oil

An object of the present invention is to provide a hydrotreating catalyst capable of being produced by a simple method and capable of realizing ultra-deep desulfurization of sulfur components in gas oil without requiring severer operating conditions as well as capable of reducing nitrogen components simultaneously, to provide a process for producing the catalyst, and to provide a process for desulfurizing gas oil using the catalyst. The invention relates to a catalyst containing on an inorganic oxide support 10 to 40% by weight of a metal in the Group 6 of the periodic table, 1 to 15% by weight of a metal in the Group 8 of the periodic table, 1.5 to 8% by weight of phosphorus, each in terms of an oxide amount based on the catalyst, and 2 to 14% by weight of carbon in terms of an element amount based on the catalyst, wherein the catalyst has a specific surface area of 150 to 300 m/g, a pore volume of 0.3 to 0.6 ml/g, and an average pore diameter of 65 to 140 &#x212b;, and wherein the catalyst has a certain NO adsorption FT-IR spectrum after sulfidation treatment, a process for producing the catalyst, and a process for desulfurizing gas oil using the catalyst.

Hydrotreating catalyst for gas oil, process for producing the same, and method of hydrotreating gas oil

A catalyst for hydrotreating gas oil, which comprises an inorganic oxide support having provided thereon: at least one selected from metals in the Group 6 of the periodic table at from 10 to 30% by weight, at least one selected from metals in the Group 8 of the periodic table at from 1 to 15% by weight, phosphorus at from 1.5 to 6% by weight, and carbon at from 2 to 14% by weight, each in terms of a respective oxide amount based on the catalyst, wherein the catalyst has a specific surface area of from 220 to 300 m/g, a pore volume of from 0.35 to 0.6 ml/g, and an average pore diameter of about from 65 to 95 &#x212b;; a process for producing the catalyst; and a method for hydrotreating gas oil, which comprises subjecting a gas oil fraction to a catalytic reaction in the presence of the catalyst under conditions at a hydrogen partial pressure of from 3 to 8 MPa, a temperature of from 300 to 420&#xb0; C., and a liquid hourly space velocity of from 0.3 to 5 hr.

Catalyst for hydrotreating gas oil, process for producing the same, and method for hydrotreating gas oil

A process for producing a hydrodesulfurization catalyst is disclosed, comprising impregnating an inorganic oxide carrier containing a crystalline aluminosilicate with a solution consisting of Group VI metal oxide, a Group VIII metal oxide, and phosphorus. Also disclosed is a process for deep hydrodesulfurization of a gas oil fraction using said catalyst to obtain gas oil having an extremely low sulfur content.

Process for producing hydrodesulfurization catalyst and

A process is described for producing a catalyst composition for hydrodesulfurization of hydrocarbon oil, which comprises:

Process for producing catalyst composition for use in

A catalyst composition for the hydrodesulfurization of a hydrocarbon oil, comprising a composite of metal oxides comprising:

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Tokyo, Japan

Takashi Fujikawa