Hitachi, Ltd.

Hitachi Vlsi Engineering Corp.

Other

Dai Nippon Printing Co., Ltd.

Hitachi Ulsi Engineering Corp.

Dia Nippon Printing Co., Ltd.

Takashi Emata

Takayuki Okinaga

Osamu Horiuchi

Hiromichi Suzuki

Gen Murakami

Kanji Otsuka

Yuuji Shirai

Hajime Hasebe

Kazunori Katoh

Kunihiko Nishi

Masachika Masuda

Tamaki Wada

Toshio Sugano

Yuji Yamaguchi

Tomoaki Kudaishi

Yuji Shirai

Toshihiro Matsunaga

Shouji Matsugami

Hiroshi Koguma

Makoto Omata

Shuichiro Azuma

To realize low-profile electronic apparatus (a memory module and a memory card) of a large storage size by mounting tape carrier packages (TCPs) with a memory chip encapsulated onto a wiring board in high density. To be more specific, a TCP is composed of an insulating tape, leads formed on one side thereof, a potting resin with a semiconductor chip encapsulated, and a pair of support leads arranged on two opposite short sides. The pair of support leads function to hold the TCP at a constant tilt angle relative to the mounting surface of the wiring board. By varying the length vertical to the mounting surface, the TCP can be mounted to a desired tilt angle.

Semiconductor device

A molded semiconductor device has a plurality of slender leads formed with a sealing strip connecting them together to prevent the molding material from leaking out between the leads. Specifically, the sealing strip comprising an adhesive and an electrically insulating material is applied to the leads substantially perpendicular to the lengthwise direction of the leads. The strip is place such that an inner edge thereof substantially lies on a boundary line or inside where the molding terminates. The strip is then thrust into spaces formed between the leads. Thereafter the semiconductor chip is connected to the leads, the semiconductor chip and the leads are placed in a molding unit, the strip serving to block the molding material leaking outside the molding unit.

Method of fabricating a molded semiconductor device having blocking

A leadframe according to this invention is formed by bonding a single leadframe with a substrate using adhesive film or double-sided adhesive resin film, which is divided and attached to two or more predetermined points between them. This reduces the quantity of gas or contaminants generated from adhesives. Also, this results in the reduction of the stress generated during heat treatment of the leadframe and also in the elimination of warping of the lead frame due to thermal stress. Cracking does not occur on the resin because resin is removed easily and assuredly, and no air is left behind. This contributes to high reliability and increased productivity. The lead frame is further formed by bonding a plurality of metal substrates of different materials to single leadframe. This through more stable thermal behavior high reliability.

Semiconductor device having a leadframe and metal substrate

A semiconductor device is provided having a semiconductor pellet that is arranged on a substantially central part of a film base in which a metal plate is overlaid with an insulating member, while inner leads are arranged on a peripheral part of the film base in a state in which they are electrically isolated from the metal plate of the film base. External terminals for a power source among external terminals of the semiconductor pellet and middle parts of the metal plate of the film base, as well as inner leads for the power source among the inner leads and peripheral parts of the metal plate are electrically connected by pieces of bonding wire, respectively.

Semiconductor device and method of producing the same

A multi-layer leadframe according to this invention is formed by laminating on a leadframe body an insulating layer and an electrically conductive layer in this order. The electrically conductive plate includes a planar portion and a given number of terminal portions extending therefrom, said planar portion extending across said insulating layer laminated on said leadframe body. The planar portion is made thinner than the terminal portions. A thin portion of this planar portion is formed by an etching technique, and at least a part of the terminal portions of the electrically conductive plate is fixedly connected with an inner lead of the leadframe body.

Multi-layer leadframes, electrically conductive plates used therefor and

A semiconductor device comprising the fact that a semiconductor pellet is arranged on a substantially central part of a film base in which a metal plate is overlaid with an insulating member, while inner leads are arranged on a peripheral part of the film base in a state in which they are electrically isolated from the metal plate of the film base, and that external terminals for a power source among external terminals of the semiconductor pellet and middle parts of the metal plate of the film base, and inner leads for the power source among the inner leads and peripheral parts of the metal plate are electrically connected by pieces of bonding wire, respectively.

A semiconductor chip package technology which uses thin film wiring from the chip to the package terminals for increased line density and decreased parasitic capacitance and uses a thin film adhesion layer for improved heat conductivity between the package substrate and its sealing cap. The package uses a thin conductor film deposited along the element mounting surface of a sintered substrate. An adhesion layer, to provide a high quality bond between the sealing cap and substrate, is then deposited on the substrate peripheral area by successively laminating metal and metallized layers, or by depositing a single layer of low metal glass. The adhesion layer is thinner and of larger area than thick film technology, for improved heat conduction.

Semi-conductor device

Growing community of inventors

Akishima, Japan

Takashi Emata