The Japan Steel Works, Ltd.

National Institute of Advanced Industrial Science and Technology

Sony Corporation

Takashi Ebisawa

Tetsuo Tsuchiya

Toshiya Kumagai

Keisuke Washio

Tatsuya Matsumoto

Junichi Shida

Hironobu Arashima

Mitsugu Sohma

Kunihiko Koyanagi

Hideaki Itoh

Kenichi Tsukada

Hidehiko Ohtu

Ryuji Oki

A method of manufacturing a display device having an organic EL device includes the steps of: forming an organic EL device over a substrate; and forming a protection film so as to cover the organic EL device. The protection film is made of a laminated film of a first insulating film containing Si, a second insulating film containing Al and a third insulating film containing Si. The step of forming the protection film includes the steps of: forming the first insulating film by a plasma CVD method so as to cover the organic EL device; forming the second insulating film over the first insulating film by an ALD method; and forming the third insulating film over the second insulating film by a plasma CVD method.

Method of forming protection film for organic EL device, method of manufacturing display device and display device

A method of manufacturing a display apparatus having an organic EL element includes: a step of forming the organic EL element over a substrate made of a flexible substrate; and a step of forming a protecting filmmade of an inorganic insulating material so as to cover the organic EL element by using an ALD method. In the step of forming the protecting film, the protecting filmis formed by alternately performing a step of forming a high-density layerH by using an ALD method and a step of forming, by using an ALD method, a low-density layerL that has the same constituent element as the high-density layerH and has a lower density than the high-density layerH. The protecting filmhas a layered structure made of one or more high-density layersH and one or more low-density layersL so that the low-density layerL and the high-density layerH are alternately layered so as to be in contact with each other.

Display apparatus and method of manufacturing the same

A method of producing a superconductive material involves the step (1) of applying a solution of an organic compound of metals and oxides of the metals forming a superconductive material, onto a support body to be subsequently dried, the provisional baking step (2) of causing organic components of the organic compound of the metals to undergo thermal decomposition, and the main baking process step (3) of causing transformation of the oxides of the metals into the superconductive material, thereby producing an epitaxially-grown superconductive coating material, wherein the support body is irradiated with the laser light during a period between the steps (1) and (2) from a surface of the support body, on the opposite side of the surface coated with the solution of the organic compound of the metals for forming the superconductive material.

Method of producing superconductive oxide material

A method of producing a superconductive material involves the step (1) of applying a solution of an organic compound of metals, oxides of the metals forming a superconductive material, onto a support body to be subsequently dried, a provisional baking step (2) of causing organic components of the organic compound of the metals to undergo thermal decomposition, and a main baking process step (3) of causing transformation of the oxides of the metals into the superconductive material, thereby producing an epitaxially-grown superconductive coating material, wherein at the time of irradiation of a surface of the support body coated with the solution of the organic compound of the metals for forming the superconductive material, and/or of a surface of the support body, opposite to the surface coated with the solution of the organic compound of the metals, with the laser light, during a period between the steps (1) and (2).

A melt of a hydrogen storage alloy having an arbitrary composition is cooled gradually at a cooling rate of 5&#xb0; C./min or less and solidified. Alternatively an alloy having an arbitrary composition, after heating to a temperature equal to or more than a melting point thereof, is cooled gradually at a cooling rate of 5&#xb0; C./min or less and solidified. Thereby a homogeneous alloy reduced in segregation, precipitates, or inclusions is obtained. The homogeneous alloy is excellent in the hydrogen storage amount, in the plateau property and in durability.

Method of producing hydrogen storage alloy

A double superheterodyne receiver has a frontend stage for receiving an RF signal, a first phase-locked loop (PLL) local oscillator circuit for generating a first local oscillator signal, a first mixer for mixing the RF signal with the first local oscillator signal to produce a first IF signal, a second PLL local oscillator circuit for generating a second local oscillator signal, a second mixer for mixing the first IF signal with the second local oscillator signal to produce a second IF signal, a detector for detecting information carried on the second IF signal and control circuitry for controlling the dividing ratios of programmable frequency dividers respectively included in the first and second PLL local oscillator circuits. To tune the receiver to a desired RF frequency, the control circuitry, which can include a micro-computer, selects the dividing ratio N.sub.1 of the first PLL local oscillator circuit and the dividing ratio N.sub.2 of the second PLL local oscillator circuit according to a predetermined scheme. The RF frequency to which the receiver is tuned is determined by the first and second local oscillator signal frequencies. In one version thereof, the second local oscillator circuit includes a frequency converter and a selectively tunable reference oscillator, so that the second local oscillator signal can be accurately tuned for receiving SSB signals.

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Kanagawa, Japan

Takashi Ebisawa