Tokyo Electron Limited

Takashi Chiba

Jun Sato

Kazuhide Hasebe

Mitsuhiro Okada

Jun Ogawa

Takeshi Kobayashi

Shigehiro Miura

Tsuneyuki Okabe

Takeshi Kumagai

Masato Yonezawa

Takahito Umehara

Tatsuya Tamura

Masayuki Hasegawa

Kohichi Orito

Hitoshi Katoh

With respect to a plasma processing method of depositing a nitride film on a substrate by using plasma, the plasma processing method includes (a) supplying a plasma processing gas that includes a nitrogen-containing gas to a plasma processing space inside a processing container, and (b) supplying high-frequency power from a high-frequency power supply to an antenna disposed on a quartz portion exposed to the plasma processing space to generate the plasma in the plasma processing space at a time of performing (a). (b) includes supplying a pulse wave of the high-frequency power to the antenna. The pulse wave repeats on and off.

Plasma processing method and substrate processing apparatus

A deposition method includes causing aminosilane gas to be adsorbed on a substrate in which a recessed portion is formed on a surface of the substrate; causing a first silicon oxide film to be stacked on the substrate by supplying oxidation gas to the substrate to oxidize the aminosilane gas adsorbed on the substrate; and performing a reforming process on the first silicon oxide film by activating, by plasma, a first mixed gas including helium and oxygen, and supplying the first mixed gas to the first silicon oxide film.

Deposition method

A method for dry cleaning a susceptor is performed after a substrate is removed from a processing chamber of a substrate processing apparatus. In the method, a cleaning gas for dry cleaning is supplied to a first region including a substrate receiving region in the susceptor. The cleaning gas is regionally supplied to a second region where the cleaning gas is difficult to reach when the cleaning gas is supplied to the first region.

Method for dry cleaning a susceptor and substrate processing apparatus

A deposition method includes a first process performed by repeating causing aminosilane gas to be adsorbed on a substrate; causing a first silicon oxide film to be stacked on the substrate by supplying oxidation gas to the substrate to oxidize the aminosilane gas adsorbed on the substrate; and performing a reforming process on the first silicon oxide film by activating a first reformed gas by plasma and supplying the first reformed gas to the first silicon oxide film, and a second process, performed after the first process, by repeating causing aminosilane gas to be adsorbed on the substrate; causing a second silicon oxide film to be stacked on the substrate by supplying oxidation gas; and performing a reforming process on the second silicon oxide film by supplying a plasma-activated second reformed gas. The first reformed gas has a smaller effect of oxidizing the substrate than the second reformed gas.

A particle removal method is provided for removing particles on a film etched using a fluorine-containing gas. In the method, a mixed gas of an activated oxygen-containing gas and hydrogen gas added to the activated oxygen-containing gas is supplied to the etched film.

Particle removal method and substrate processing method

A film deposition apparatus includes a vacuum chamber and a turntable provided in the vacuum chamber. A concave portion is formed in a surface of the turntable to accommodate a substrate therein, and a pedestal portion is provided to support a location inside a periphery of the substrate in the concave portion. At least one communication passage is formed in a wall portion of the concave portion to cause a first space around the pedestal portion in the concave portion to be in communication with a second space outside the turntable provided in an end area of the concave portion located opposite to a first center of the turntable when seen from a second center of the concave portion. An exhaust opening is provided to evacuate the vacuum chamber.

Film deposition apparatus

A method of manufacturing a silicon oxide film is provided. In the method, a substrate having a metal film on a surface thereof is loaded in a reaction chamber, and supply of a hydrogen gas into the reaction chamber is started by a hydrogen gas supply unit after the step of loading the substrate in the reaction chamber. Then, supply of an oxidation gas into the reaction chamber is started by an oxidation gas supply unit after the step of starting the supply of the hydrogen gas into the reaction chamber, and supply of a silicon-containing gas into the reaction chamber is started by a silicon-containing gas supply unit after the step of starting the supply of the hydrogen gas into the reaction chamber.

Method of manufacturing a silicon oxide film

A method is used for removing a metal contaminant deposited on a quartz member selected from the group consisting of a reaction tube, wafer boat, and heat-insulating cylinder of a vertical heat processing apparatus for a semiconductor process. The method includes obtaining the quartz member unattached to the vertical heat processing apparatus; then, performing diluted hydrofluoric acid cleaning of cleaning the quartz member by use of diluted hydrofluoric acid; then, performing first purified water cleaning of cleaning the quartz member by use of purified water; then, performing hydrochloric acid cleaning of cleaning the quartz member by use of hydrochloric acid; and then, performing second purified water cleaning of cleaning the quartz member by use of purified water.

Removal of metal contaminant deposited on quartz member of vertical heat processing apparatus

A silicon dioxide film removing method is capable of removing a silicon dioxide film, such as a natural oxide film or a chemical oxide film, at a temperature considerably higher than a room temperature. The silicon dioxide film removing method of removing a silicon dioxide film formed on a workpiece in a processing vesselthat can be evacuated uses a mixed gas containing HF gas and NHgas for removing the silicon dioxide film. The silicon dioxide film can be efficiently removed from the surface of the workpiece by using the mixed gas containing HF gas and NHgas.

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Iwate, Japan

Takashi Chiba