Tdk Corporation

Takashi Asatani

Fujimi Kimura

Junichi Sato

Susumu Haratani

Tohru Oikawa

Kazuya Maekawa

A thermoelectric device includes a semiconductor stacked thermoelectric thin film including a first high-purity layer composed of SiGe as a main material and a composite carrier supply layer formed on the first high-purity layer. The composite carrier supply layer includes a second high-purity layer and third high-purity layer composed of Si as a main material, and a carrier supply layer held between the second and third high-purity layers and composed of SiGe as a main material. The carrier supply layer is a P-type carrier supply layer to which an additive of a group XIII element is added or a N-type carrier supply layer to which an additive of a group XV element is added.

Thermoelectric device

A thermoelectric element has a first substrate at a high temperature side, a second substrate at a low temperature side facing the first substrate, a thermoelectric material placed on the second substrate via a silicon layer, a first electrode formed on the first substrate, and a second electrode formed on the silicon layer. The thermoelectric element has a stress releasing section which is formed between the first electrode and the thermoelectric material, and which includes a plurality of columnar portions. The stress releasing section suppresses defects such as cracks that might be produced in the thermoelectric element due to a stress generated in the thermoelectric element.

Thermoelectric element

A spin high-frequency mixer includes a spin current generator generating a spin current upon input of a local oscillator signal, a TMR device which inputs a high-frequency signal and the spin current and generates a mixed signal, and an output device outputting the generated mixed signal from the TMR device.

Spin high-frequency mixer and method of manufacture thereof

Thin film thermoelectric element including stress releasing elements

In the magnetic storage device, magnetization characteristics during write cycles are homogenized, and write cycles are carried out efficiently. In the magnetic storage device, the soft magnetic body is formed so as to cover the line either totally or partially, and the anti-ferromagnetic layer is formed on the outer surface of this soft magnetic body. Furthermore, the magneto-resistive element is disposed in the vicinity of the line. Suppose the case where the exchange coupling energy at the interface between the soft magnetic body and the anti-ferromagnetic layer is J (erg/cm), the saturation magnetization of the soft magnetic body is Ms (emu/cc), and the coercive force of the soft magnetic body is Hc (Oe). Then, the thickness t (cm) of the soft magnetic body is selected to be such that t&#x3c;J/(Hc&#xb7;Ms).

Magnetic storage device and method for producing the same

In a magnetic memory, a magneto-resistivity effect elementis disposed adjacently to a wirefor producing a writing magnetic field and further a ferromagnetic bodyis disposed so as to cover at least part of the wireand consequently orient the state X of magnetization of this ferromagnetic bodyin one direction. According to this invention, it is made possible to homogenize the magnetic property during the course of writing and implement the writing work efficiently.

Magnetic memory including ferromagnetic yoke and antiferromagnetic layer

Provided is a magnetic reproducing apparatus capable of controlling a magnetic domain of a free layer, and obtaining a sufficient reproduction output even if the size of an MR device is reduced. The MR device is formed so as to have a laminate structure in which a semi-hard magnetic layer and a first ferromagnetic layer (free layer) are exchange-coupled to each other through a non-magnetic exchange coupling layer. Unlike an abutted junction structure using a hard magnetic layer, the distribution of a magnetic bias applied from the semi-hard magnetic layer to the first ferromagnetic layer becomes uniform, thereby the first ferromagnetic layer is brought into a single magnetic domain state. Moreover, the semi-hard magnetic layer has a moderate coercive force lying halfway between soft magnetism and hard magnetism, so the magnetization direction of the first ferromagnetic layer is not fixed. Therefore, the magnetization direction of the first ferromagnetic layer can be easily rotated, thereby a magnetoresistive ratio can be secured, so even if the size of the MR device is reduced, a sufficient reproduction output can be obtained.

Electromagnetic transducer laminate with different widths for the semi-hard magnetic layer and the first ferromagnetic layer

On a wafer-like substrate , there are formed a number of thin film magnetic head elements in matrix, each of which is formed to include a first shield film formed on the wafer-like substrate , a first insulating film formed on the first shield film, a magnetoresistive element and first and second electrode films connected to respective ends of the magnetoresistive element formed on the first insulating film, a second shield film formed to cover the magnetoresistive element and first and second electrode films , a second insulating film formed on the second shield film, and a conductive film electrically connected to the first electrode film 11 and second shield film and having a middle portion which is separated from a side edge of the second shield film by a distance &Dgr;G viewed in a film stacking direction. Since the first electrode film and second shield film become equipotential, no voltage is applied across the first and second insulating films and dielectric breakdown does not occur. By cutting the middle portion of the conductive film , property of the magnetoresistive element can be measured. Since the middle portion of the conductive film situates outside the second shield film , a generation of conductive material debris upon cutting can be prevented, and a cut surface of the first electrode film and second shield film are not short-circuited.

Thin film magnetic head assembly and method of manufacturing the same

A first insulating film is provided on a first shielding film. A magnetoresistive effective element is provided on the first insulating film. A first and a second leading conductor films are provided on the first insulating film and connected to both ends of the magnetoresistive effective element. A second insulating film covers the first and second leading conductor films and the magnetoresistive effective element, and a second shielding film is provided on the second insulating film. A terminal conductor for measurement is conductively connected to at least one of the first and the second shielding films, and exposed to a different surface of a slider from a medium opposing surface thereof.

Growing community of inventors

Tokyo, Japan

Takashi Asatani