Kioxia Corporation

Toshiba Memory Corporation

Takashi Asano

Kensei Takahashi

Yoichi Minemura

Satoshi Wakatsuki

According to one embodiment, a substrate processing apparatus includes: an inner tube extending in a first direction and configured to accommodate a plurality of substrates; an outer tube configured to surround the inner tube and provide an airtight sealed space; a nozzle disposed in the inner tube; a gas supply configured to supply a processing gas to the inner tube via the nozzle; at least one slit provided on a side surface of the inner tube facing the nozzle; and an exhaust port coupled to the outer tube. Along the first direction, an opening area of a central portion of the slit is larger than an opening area of end portions of the slit.

Substrate processing apparatus and method for manufacturing semiconductor device

A semiconductor storage device includes first and second stacked bodies, a first semiconductor layer, a first charge storage layer, a conductive layer, and a first silicon oxide layer. The first stacked body includes first insulation layers and first gate electrode layers that are alternately stacked in a first direction. The first semiconductor layer extends in the first stacked body in the first direction. The first charge storage layer is provided between the first semiconductor layer and the first gate electrode layers. The conductive layer is provided between the first stacked body and the second stacked body and extends in the first direction and a second direction. The first silicon oxide layer is provided between the conductive layer and the first gate electrode layers. The first silicon oxide layer containing an impurity being at least one of phosphorus, boron, carbon, and fluorine.

Semiconductor storage device

A semiconductor storage device includes a semiconductor substrate; an insulating layer provided on the semiconductor substrate; a barrier metal layer provided on the insulating layer; an aluminum compound layer provided on the barrier metal layer; an amorphous layer provided on the aluminum compound layer and including a material that vaporizes upon its chemical reaction with fluorine; and a metal layer provided on the amorphous layer.

Growing community of inventors

Yokkaichi Mie, Japan

Takashi Asano