Hitachi, Ltd.

Tdk Corporation

Other

Renesas Technology Corp.

Takashi Aoyagi

Toshiaki Nishimoto

Shogo Kiyota

Keitaro Uehara

Shinichiro Toya

Keishi Nakayama

Shuji Ikeda

Atsushi Ogishima

Kenji Endou

Tohru Inoue

Akihiro Unno

Kouichi Nagasawa

Kenichi Tochi

Kazunori Nakajima

Yuji Hara

Kenji Kashiwagi

Katsuya Sato

Katsunori Osanai

Toshihiro Ishiki

Jotaro Akiyama

Akio Ikeya

Yusuke Mure

Naohiro Sezaki

Hirofumi Natori

Hirotaka Kobayashi

Akihiko Tani

Takashi Nishiyama

Motoi Nishijima

A MEMS switch includes a first signal line provided in a first beam, a first GND adjacent to the first signal line, a second signal line provided in a second beam, and a second GND adjacent to the second signal line. A contact terminal is fixed to any one of the first signal line and the second signal line and performs connection between the first signal line and the second signal line according to deformation of the first beam.

MEMS switch and electronic device

Server

In a piezoelectric element, a piezoelectric film, a first electrode film provided on one surface of the piezoelectric film, and a second electrode film provided on the other surface of the piezoelectric film form a layered structure, an outer contour of the first electrode film and an outer contour of the second electrode film are positioned outside an outer contour of the piezoelectric film as viewed in a layering direction, an organic resin film is in contact with the piezoelectric film, and generation of noise is suppressed.

Angular velocity sensor

A blade server apparatus including a plurality of server modules, a backplane for mounting the plurality of server modules thereon, and an SMP coupling device having wiring lines to SMP couple the plurality of server modules. Each of the server modules has one or more processors controlled by firmware and a module manager for managing its own server module, the module manager has an ID determiner for informing each processor of a processor ID, each processor has a processing unit and an SMP virtual connecting unit for instructing ones of wiring lines of the SMP coupling device through which a packet received from the processing unit is to be transmitted, and an ID converter for converting the processor ID and informing it to the SMP virtual connecting unit is provided within the firmware.

Blade server apparatus

To make it possible to take over an IO configuration that is assigned to logical partitions in reallocation of the logical partitions, and to make an IO access work normally. A computer system has a server having an IO bridge, a switch that has a first IO bridge for connecting with the IO bridge of the server through a bus and plural second IO bridges for connecting to plural IO devices through a bus, and bus number assignment management means for fixedly assigning mutually different PCI bus numbers to the plural second IO bridges.

Computer system and bus assignment method

In the semiconductor integrated circuit device, an AND-type flash memory is formed on a substrate in which stripe-like element separation regions are formed and active regions L sandwiched between the element separation regions are formed like stripes. A silicon monocrystal substrate containing nitrogen or carbon is used as the semiconductor substrate, to reduce dislocation defects and junction leakages so that the reliability and yield are improved.

Semiconductor integrated circuit device

A semiconductor integrated circuit device including a plurality of holes in an interlayer insulating film beneath a bonding pad wherein a plug is buried in the respective holes and is made of the same conductive film (W/TiN/Ti) as a plug in a through-hole. Any wire as a second layer is not formed in a lower region of the bonding pad. The plug buried in the holes is connected only to the upper boding pad and is not connected to a lower wire.

Process for multilayer wiring connections and bonding pad adhesion to dielectric in a semiconductor integrated circuit device

Semiconductor integrated circuit device and manufacturing method thereof

A process for producing semiconductor devices having excellent electric characteristics such as high threshold voltage Vth and small leakage current, maintaining high yields while preventing the occurrence of thermal etching at the time of heat-treatment to form a well diffusion layer in semiconductor devices such as CMOS IC's. Namely, a semiconductor wafer having a silicon dioxide film formed on the main surface thereof is heat-treated at a high temperature in an inert gas atmosphere. In this case, oxygen is contained in small amounts in the inert gas, so that pinholes formed in the silicon dioxide film are buried therein by the action of oxygen gas. Therefore, thermal etching is not generated by the high temperature inert gas, and the yields of semiconductor devices can be increased.

Process for producing semiconductor devices

Growing community of inventors

Hitachinaka, Japan

Takashi Aoyagi