Average Co-Inventor Count = 3.86
ph-index = 18
The patent ph-index is calculated by counting the number of publications for which an author has been cited by other authors at least that same number of times.
Company Filing History:
1. International Business Machines Corporation (467 from 163,830 patents)
2. Globalfoundries Inc. (29 from 5,671 patents)
3. Sony Corporation (21 from 58,123 patents)
4. Meiji Seika Kaisha, Ltd. (11 from 382 patents)
5. Samsung Electronics Co., Ltd. (8 from 130,321 patents)
6. Nhk Spring Co., Ltd. (7 from 1,223 patents)
7. Fuji Photo Film Company, Limited (5 from 16,454 patents)
8. Meiji Seika Pharma Co., Ltd. (5 from 107 patents)
9. Tokyo Electron Limited (4 from 10,217 patents)
10. Ulvac, Inc. (4 from 439 patents)
11. Other (1 from 832,398 patents)
12. Basf Se Corporation (1 from 5,636 patents)
13. Sony Electronics Inc (1 from 2,333 patents)
14. Elpis Technologies Inc. (1 from 51 patents)
15. Jrs Corporation (1 from 4 patents)
537 patents:
1. 12453293 - Redundant bottom pad and sacrificial via contact for process induced RRAM forming
2. 12446480 - Top contact on resistive random access memory
3. 12408431 - Gate stack quality for gate-all-around field-effect transistors
4. 12408564 - Process-induced forming of oxide RRAM
5. 12408369 - Vertical transport field effect transistors having different threshold voltages along the channel
6. 12402342 - Nanosheet device with T-shaped dual inner spacer
7. 12396376 - Piezoelectric memory
8. 12382621 - Decoupling capacitor inside gate cut trench
9. 12364174 - Global heater for phase change memory
10. 12310034 - Semiconductor device identification using preformed resistive memory
11. 12284922 - Stacked access device and resistive memory
12. 12272657 - RRAM filament location for physically unclonable function
13. 12266393 - Negative capacitance for ferroelectric capacitive memory cell
14. 12255106 - Multi-Vt nanosheet devices
15. 12225833 - Oxide-based resistive memory having a plasma-exposed bottom electrode