Renesas Electronics Corporation

Hitachi, Ltd.

Hitachi Denshi Kabushiki Kaisha

Tessera Advanced Technologies, Inc.

Renesas Technology Corp.

Hitachi Vlsi Engineering Corp.

Takashi Akazawa

Naotaka Tanaka

Takahiro Naito

Yasuhiro Yoshimura

Michihiro Kawashita

Yoshimune Hagiwara

Masahito Kobayashi

Narimichi Maeda

Shizuo Sugiyama

Yasuhiro Kita

Yuzo Kita

Osamu Yumoto

Tetsuya Nakagawa

Atsushi Kiuchi

Kenji Kaneko

Takafumi Kikuchi

Jun Ishida

Tomoru Sato

Kenji Kanemitsu

In a semiconductor device in which a plurality of semiconductor chips are stacked, performance is enhanced without deteriorating productivity. The semiconductor device has a first semiconductor substrate having a first surface and a second surface opposite the first surface, a first insulating film formed on the first surface, a first hole formed in the first insulating film and partially extending into the first semiconductor substrate, a second hole formed in the second surface, a first electrode entirely filling the first hole, and a conductive film conformally formed in the second hole. The conductive film is electrically connected to a bottom surface of the first electrode and leaves a third hole in the first semiconductor substrate open. The third hole is configured to receive a second electrode of a second semiconductor substrate.

Semiconductor device and method of manufacturing same

In a semiconductor device in which a plurality of semiconductor chips are stacked, performance is enhanced without deteriorating productivity. The semiconductor device has a plurality of elements, an interlayer insulating film, a pad, and a bump electrode electrically connected with the pad sequentially formed on a main surface of a silicon substrate and has a back-surface electrode formed on a back surface of the silicon substrate and electrically connected with the bump electrode. The bump electrode has a protruding portion penetrating through the pad and protruding toward the silicon substrate side. The back-surface electrode is formed so as to reach the protruding portion of the bump electrode from the back surface side of the silicon substrate toward the main surface side and to cover the inside of a back-surface electrode hole portion which does not reach the pad, so that the back-surface electrode is electrically connected with the bump electrode.

Semiconductor device and method of manufacturing the same

A through silicon via reaching a pad from a second surface of a semiconductor substrate is formed. A penetration space in the through silicon via is formed of a first hole and a second hole with a diameter smaller than that of the first hole. The first hole is formed from the second surface of the semiconductor substrate to the middle of the interlayer insulating film. Further, the second hole reaching the pad from the bottom of the first hole is formed. Then, the interlayer insulating film formed on the first surface of the semiconductor substrate has a step shape reflecting a step difference between the bottom surface of the first hole and the first surface of the semiconductor substrate. More specifically, the thickness of the interlayer insulating film between the bottom surface of the first hole and the pad is smaller than that in other portions.

Manufacturing process and structure of through silicon via

When a through-hole electrode and a rear-surface wire are formed on a rear surface of a chip, a convex portion is formed on the rear surface of the chip due to a rear-surface wiring pad which is a part of the through-hole electrode and the rear-surface wire. This causes the air leakage when the chip is sucked, and therefore, the reduction of the sucking force of the chip occurs. A concave portion is formed in advance in a region where a rear-surface wiring pad and a rear-surface wire are formed. The rear-surface wiring pad and the rear-surface wire are provided inside the concave portion. Thus, a flatness of the rear surface of the chip is ensured by a convex portion caused by thicknesses of the rear-surface wiring pad and the rear-surface wire, so that the reduction of the sucking force does not occur when the chip is handled.

After forming a ring-shaped trench penetrating through a semiconductor substrate from a rear surface side thereof and forming an insulating film inside the trench and on the rear surface of the semiconductor substrate, a through hole is formed in the insulating film and semiconductor substrate on an inner side of the ring-shaped trench from the rear surface side, thereby exposing a surface protection insulating film formed on a front surface of the semiconductor substrate at a bottom of the through hole. After removing the surface protection insulating film at the bottom of the through hole to form an opening to expose an element surface electrode, a contact electrode connected to the element surface electrode is formed on inner walls of the through hole and opening, and a pad electrode made of the same layer as the contact electrode is formed on the rear surface of the semiconductor substrate.

Manufacturing process of semiconductor device and semiconductor device

In a semiconductor device in which a plurality of semiconductor chips are stacked, performance is enhanced without deteriorating productivity. The semiconductor device has a plurality of elements, an interlayer insulating film, a pad, and a bump electrode electrically connected with the pad sequentially formed on a main surface of a silicon substrate and has a back-surface electrode formed on a back surface of the silicon substrate and electrically connected with the bump electrode. The bump electrode has a protruding portion penetrating through the pad and protruding toward the silicon substrate side. The back-surface electrode is formed so as to reach the protruding portion of the bump electrode from the back surface side of the silicon substrate toward the main surface side and to cover the inside of a back-surface-electrode hole portion which does not reach the pad, so that the back-surface electrode is electrically connected with the bump electrode.

A semiconductor wafer comprising: a tubular trench formed at a position to form a through-hole electrode of a wafer; an insulating member buried inside the trench and on an upper surface of the trench; a gate electrode film and a metal film formed on an upper surface of the insulating member; a multilevel columnar wiring via formed on an upper surface of the metal film; and an external connection electrode formed electrically connected to the metal film via the multilevel columnar wiring via. In this manner, it is unnecessary to have a new process of dry etching to form a through-hole electrode after thinning the wafer and equipment development. Moreover, introduction of a specific design enables formation of through-hole electrodes with significantly reduced difficulties of respective processes.

Semiconductor wafer and method of manufacturing the same and method of manufacturing semiconductor device

In order to implement a high-density high-performance semiconductor system small in size, there is provided a method for implementing three-dimensional connection between a plurality of semiconductor chips differing from each other with the shortest metal interconnect length, using penetration electrodes, thereby enabling a fast operation at a low noise level, the method being a three-dimensional connection method very low in cost, and short in TAT in comparison with the known example, capable of bonding at an ordinary temperature, and excellent in connection reliability.

Semiconductor device and method of manufacturing thereof

A connection method is disclosed for a high-performance semiconductor system. The connection method enables high-speed operation with low noise, so as to obtain reliable and excellent connection in a short TAT at low costs. Semiconductor chips and the interposer chips are polished by grinding at their rear surfaces, holes are formed at rear surface positions corresponding to external electrode parts on the device side (front surface side) so that the holes extend to front surface electrodes, and metal plating films are applied to the side walls of the holes and rear surface side. Metal bumps of another semiconductor chip laminated at an upper stage being press-fitted into the holes applied with the metal plating films through deformation and being geometrically calked in the through holes formed in the semiconductor chip so as to electrically connected thereto.

In a single chip processor which can be provided with an extended program memory, a high-speed access can be executed without being restricted by the access time for the external program memory when an internal program memory is employed, by varying the effective instruction cycle, and thus a high-speed processing performance for a single chip processor of a stored program type can be attained.

Single chip processor

A signal processor having a wide dynamic range and which can process both data in the fixed point representation and data in the floating point representation by the use of a single floating-point arithmetic circuit is capable of processing digital signals, such as voice signals, at high speed and in real time. In addition, this signal processor includes an arithmetic logic unit for floating point data and/or fixed point data in which there is selectively provided a first pair of first and second floating point data which are to be subjected to an arithmetic operation, or a second pair of data consisting of third floating (fixed) point data which is to be converted to fixed (floating) point data and fourth floating point data which is a reference data for the conversion. If the first pair is selected the first and second pair of floating point data are subjected to the arithmetic operation. If the second pair is selected, the conversion of the fixed (floating) point data to floating (fixed) point data is effected by normalizing the third data with the value of the exponent part of the fourth data.

Arithmetic logic unit for floating point data and/or fixed point data

In an adder for floating point data, two floating point data are adjusted so that the exponent parts have the same value and the resulting adjusted mantissa parts are added. A first shift signal is generated on the basis of the result of the added mantissa parts and having a value necessary for normalization of the addition result, and a second shift signal is generated having a value equal to the difference between the adjusted exponent part of the floating point data and a minimum value predetermined for an exponent of any floating point data at which underflow occurs. The result of addition of the adjusted mantissa parts is shifted on the basis of said second shift signal or said first shift signal depending on whether or not an underflow occurs.

Growing community of inventors

Musashimurayama, Japan

Takashi Akazawa