Tokyo Electron Limited

Takashi Akahori

Tadashi Hirata

Shuichi Ishizuka

Risa Nakase

Shunichi Endo

Takeshi Aoki

Yoko Naito

Masahide Saito

Masaki Tozawa

Kohei Kawamura

Osamu Yokoyama

Gishi Chung

Akira Suzuki

Takashi Suzuki

Hidenori Miyoshi

Shinsuke Oka

Hiroyuki Takahashi

Kouichiro Inazawa

Yasuhiro Oshima

Koichi Takatsuki

Shuuichi Ishizuka

Hikaru Yoshitaka

Shigeo Ashigaki

Masaaki Hagiwara

Yoichi Inoue

Kouji Senoo

Syoichi Abe

That surface of an electrode platewhich is opposite to a susceptorhas a projection shape. The electrode plateis fitted in an openingof shield ringat a projection. At this time, the thickness of the projectionis approximately the same as the thickness of the shield ringAccordingly, the electrode plateand the shield ringform substantially the same plane. The major surface of the projectionhas a diameter 1.2 to 1.5 times the diameter of a wafer W. The electrode plateis formed of, for example, SiC.

Plasma process device and plasma process method

With a stopper layeras an etching stopper, a second grooveand a contact holeare formed. Copper is buried inside the second grooveand the contact hole, thereby forming a plug layerand an overlying wiring layerconnected to an underlying wiring layervia the plug layer. The stopper layeris comprised of Si, C and N as essential components. First and second cap layersandare also comprised of Si, C and N as essential components.

Semiconductor device and fabrication method therefor

Plasma deposition method and system

Method of manufacturing semiconductor device

It is an object of the present invention to provide a process for a fluorine containing carbon film (a CF film), which can put an interlayer insulator film of a fluorine containing carbon film into practice. A conductive film, e.g., a TiN film , is formed on a CF film . After a pattern of a resist film is formed thereon, the TiN film is etched with, e.g., BCl gas. Thereafter, when the surface of the wafer is irradiated with O plasma, the CF film is chemically etched, and the resist film is also etched. However, since the TiN film functions as a mask, a predetermined hole can be formed. Although an interconnection layer of aluminum or the like is formed on the surface of the CF film , the TiN film functions as an adhesion layer for adhering the interconnection layer to the CF film and serves as a part of the interconnection layer. As the mask, an insulator film of SiO or the like may be substituted for the film.

Process for the production of semiconductor device

Insulating films through of CF films (fluorine-contained carbon films) are formed on a substrate (not shown). In addition, Cu wiring layers and are formed on the CF films and via an adhesion layer which comprises a Ti layer and a TiC layer. By forming the insulating films through of CF films, Cu in the wiring layers is prevented from diffusing into the insulating films through . The relative dielectric constant of the CF film is smaller than the relative dielectric constant of a BCB film.

Semiconductor device having an adhesion layer

A semiconductor device has a dielectric film made of a fluorine-added carbon film formed on a substrate, a metallic layer formed on the fluorine-added carbon film and an adhesive layer formed between the dielectric film and the metallic layer. The adhesive layer is made of a compound layer having carbon and the metal (or metal the same as the metal included in the metallic layer), to protect the metallic layer from being peeled-off from the fluorine-added carbon film.

Semiconductor device having fluorine-added carbon dielectric film and method of fabricating the same

A method for use in a plasma treatment system that shortens the time required for the cleaning of a fluorine containing carbon film adheared in a vacuum vessel and protects the surface of a transfer table when the cleaning is carried out. After a CF film is deposited by, e.g., a plasma treatment system, the cleaning of the CF film adhered in a vacuum vessel 2 is carried out. In the cleaning, a plasma of O gas is produced, and the C&mdash;C and C&mdash;F bonds on the surface of the CF film are physically and chemically cut by the active species of O produced by the plasma. The O gas penetrates into the CF film at places where the C&mdash;C and C&mdash;F bonds have been cut, to react with C of the CF film to form CO which scatters. On the other hand, F scatters as F . Thus, the CF film is removed.

Method for cleaning plasma treatment device and plasma treatment system

Microwave is introduced into a plasma chamber of a plasma processing apparatus and magnetic field is applied thereto to allow plasma generation gas to be placed in plasma state by the electron cyclotron resonance. This plasma is introduced into a film forming chamber of the plasma processing apparatus to allow film forming gas including compound gas of carbon and fluorine or compound gas of carbon, fluorine and hydrogen, and hydro carbon gas to be placed in plasma state. In addition, an insulating film consisting of fluorine added carbon film is formed by the film forming gas placed in plasma state.

Plasma film forming method and plasma film forming apparatus

An objective of this invention is to provide a plasma processing method that is capable of reducing particle contamination during plasma processing performed upon a semiconductor wafer. If the use of electron cyclotron resonance to generate a plasma and form a thin film of SiOF or the like is used by way of example, a sheath zone of a few mm thick is formed between the wafer and the plasma, and particles are trapped within a boundary zone between the sheath zone and the plasma. At this point, a microwave power is not dropped suddenly to zero after the film-formation processing, but is reduced to a lower level of, for example, 1 kW and is held for 10 seconds. This reduces the plasma density and thickens the sheath zone, so that particles are held away from the wafer surface. When the microwave power is subsequently cut, the particles move freely around, but only a small proportion thereof adhere to the wafer.

Plasma processing method

For example, in a plasma processing system, C,F,gas and C,H,gas are introduced as film-forming gases at flow rates of 60 sccm and 30 sccm, respectively, under the conditions of a pressure of 0.2 Pa, a microwave power of 2.7 kW, a radiofrequency power of 1.5 kW, and a wafer temperature of 350&deg; C. At the same time, a plasma gas is also introduced at a flow rate of 150 sccm to form CF film,having an F content of, for example, 22% on silicon substrate,This CF film,has a relative dielectric constant of 2.4.

Semiconductor device and method for producing the same

Growing community of inventors

Hachioji, Japan

Takashi Akahori