Sumitomo Heavy Industries, Ltd.

Takaomi Suzuki

Masaki Sakamoto

Yasuhiro Okada

Naoki Wakabayashi

Masafumi Yorozu

Sadahiko Kimura

A first region is formed by injecting a first condition type first dopant into a surface layer portion of an IGBT section of a semiconductor substrate. A second region is formed by injecting a second condition type second dopant into a region of the IGBT section shallower than the first region. An amorphous third region is formed by injecting the first conduction type third dopant into a surface layer portion of a diode section at a concentration higher than that of the second dopant. Thereafter, the IGBT section and the diode section are laser-annealed under conditions in which the third region is partially melted and the first dopant is activated. Subsequently, a surface layer portion which is shallower than the second injection region in the entire region of the IGBT section and the diode section is melted and crystallized by annealing the IGBT section and the diode section.

Method of manufacturing semiconductor device and semiconductor device

An annealing object is held at a position on which a laser beam output from a laser light source is incident. An infrared detector detects heat radiation light from the annealing object. An optical element which does not allow light having a wavelength shorter than 1 &#x3bc;m to be incident on the infrared detector is disposed in a pathway of the heat radiation light from the annealing object to the infrared detector.

Growing community of inventors

Kanagawa, Japan

Takaomi Suzuki