Nichia Corporation

Nichia Chemical Industries, Limited

Ricoh Company, Ltd.

Takao Yamada

Shuji Nakamura

Motokazu Yamada

Masayuki Senoh

Kanji Bando

Takeshi Kususe

Takashi Ichihara

Kouichiroh Deguchi

Michiaki Shinotsuka

Daisuke Sanga

Ryo Suzuki

Yohei Wakai

Hisashi Kasai

Hiroyuki Iwasa

Ikuko Baike

Hirofumi Yoshida

Nobuhiro Ubahara

Koji Honjo

Koichiro Deguchi

Toshio Matsushita

Yasuo Kanbara

Shigeki Okauchi

Nobuhiko Ubahara

A method for manufacturing a light emitting device comprises (a) preparing a structure including a substrate, a semiconductor layer formed on the substrate, and a p-side electrode and an n-side electrode formed on the semiconductor layer; (b) preparing a support member including a p-side wiring and an n-side wiring on the same surface thereof; (c) electrically connecting the p-side electrode and the n-side electrode of the structure to the p-side wiring and the n-side wiring of the support member, respectively, using an anisotropic conductive material containing conductive particles and a first resin; and after step (c), (d) removing the substrate from the structure.

Light emitting device and method for manufacturing the same

A semiconductor light emitting element comprises a semiconductor laminate including a p-type semiconductor layer, an active layer and an n-type semiconductor layer which are sequentially laminated; and a conductive support substrate joined to the p-type semiconductor layer side of the semiconductor laminate. The semiconductor laminate is divided into at least two semiconductor regions by a trench penetrating the p-type semiconductor layer, the active layer and the n-type semiconductor layer.

Semiconductor light emitting element

A semiconductor light emitting device comprises a semiconductor light emitting element comprising a semiconductor laminate including a p-type semiconductor layer, an active layer and an n-type semiconductor layer which are sequentially laminated, and a conductive support substrate joined to the p-type semiconductor layer side of the semiconductor laminate. The semiconductor laminate is divided into at least two semiconductor regions by a trench. The semiconductor light emitting device further comprises a first transparent sealing resin covering at least a portion of the semiconductor light emitting element, the first transparent sealing resin comprising a plurality of first fluorescent particles, each of the first fluorescent particles having an individual average particle diameter. A width of the trench is smaller than an overall average of the individual average particle diameters of the first fluorescent particles.

Semiconductor light emitting device

A method for manufacturing a semiconductor light emitting element from a wafer in which a gallium nitride compound semiconductor has been laminated on a sapphire substrate having an orientation flat, comprises of: laminating a semiconductor layer on a first main face of the sapphire substrate having an off angle &#x3b8; in a direction Xo parallel to the orientation flat; forming a first break groove that extends in a direction Y substantially perpendicular to the direction Xo, on the semiconductor layer side; forming a second break line that is shifted by a predetermined distance in the &#xb1;Xo direction from a predicted split line within the first break groove and parallel to the first break groove in the interior of the sapphire substrate and corresponding to the inclination of the off angle &#x3b8;; and splitting the wafer along the first and/or second break line.

Semiconductor light emitting element and method for manufacturing the same

A gallium nitride-based III-V Group compound semi-conductor device has a gallium nitride-based III-V Group compound semiconductor layer provided over a substrate, and an ohmic electrode provided in contact with the semiconductor layer. The ohmic electrode is formed of a metallic material, and has been annealed.

Gallium nitride based III-V group compound semiconductor device and method of producing the same

A semiconductor light emitting element includes an conductive oxide film containing at least one element selected from the group consisting of zinc, indium, tin, and magnesium that is electrically connected to the semiconductor layer. The conductive oxide film includes a plurality of voids in the vicinity of the interface with the semiconductor layer.

A gallium nitride-based III-V Group compound semiconductor device has a gallium nitride-based III-V Group compound semiconductor layer provided over a substrate, and an ohmic electrode provided in contact with the semiconductor layer. The ohmic electrode is formed of a metallic material, and has been annealed.

Two or more of striped structures are formed in one chip, and a relaxation oscillation frequency of the first striped structure is greater than a relaxation oscillation frequency of the second striped structure. An RIN value at low output is improved by the first striped structure having a higher relaxation oscillation frequency, and a single transverse mode and reliability at high output are obtained by the second striped structure having a lower relaxation oscillation frequency.

GaN semiconductor laser device, and optical disk information system using the laser device

A nitride semiconductor light emitting element is provided with: a substratehaving a pair of main surfaces that face each other; a nitride semiconductor layer of a first conductivity type layered on one of the main surfaces of substrate; a nitride semiconductor layer of a second conductivity type layered on the nitride semiconductor layer of the first conductivity type; an active layerformed between the nitride semiconductor layer of the first conductivity type and the nitride semiconductor layer of the second conductivity type; and a reflective layerformed on the nitride semiconductor layer of the second conductivity type for reflecting light from active layertoward the nitride semiconductor layer of the second conductivity type. This nitride semiconductor light emitting element can be mounted on a circuit board, with the other main surface of the above described substratebeing used as the main light emitting surface. Furthermore, a translucent conductive layeris formed between reflective layerand the nitride semiconductor layer of the second conductivity type, and an uneven interfaceis formed as the interface between translucent conductive layerand reflective layer

Semiconductor element and manufacturing method for the same

The present invention relates to a phase-change optical information recording medium comprising a recording layer which reversibly phase-changes between the crystalline phase and the amorphous phase by irradiation of a light having a recording wavelength of 390 to 430 nm, and a light transmittance thermally controllable layer showing a light transmittance varying according to temperature, in which the light transmittance increases at a rate of 0.2 to 0.7% /10&#xb0; C.

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Anan, Japan

Takao Yamada