Matsushita Electric Industrial Co., Ltd.

Agency of Industrial Science and Technology

Takao Tohda

Hiroyuki Kado

Tomizo Matsuoka

Atsushi Abe

Yosuke Fujita

Tsuneharu Nitta

Kazuo Yokoyama

Michio Okajima

Ichiro Tanahashi

Jun Kuwata

Masahiro Nishikawa

Osamu Kusumoto

Yoshio Manabe

Hiroshi Kanno

Makoto Kitabatake

Masahiro Deguchi

Shinichi Yamamoto

Kentaro Setsune

Kiyotaka Wasa

Shigeru Hayakawa

Takeshi Uenoyama

Eiichi Hirota

Masaru Yoshida

Motoshi Shibata

Ziro Terada

Yoji Fukuda

Hirofumi Yamada

Nobuhiro Tsuda

In an electron-emitting device, an electron supplying layer for supplying electrons is composed of an n-GaN layer. An electron transferring layer for moving electrons toward the surface is composed of non-doped (intrinsic) Al Ga N (0&lE;x&lE;1) having a graded composition for the Al concentration x. A surface layer is composed of non-doped AlN having a negative electron affinity (NEA). The electron transferring layer composed of Al Ga N has a band gap which is enlarged nearly continuously from the electron supplying layer to the surface layer and a negative electron affinity or a positive electron affinity close to zero. If such a voltage V as to render the surface electrode side positive is applied, the band of Al Ga N is bent, whereby a current derived mainly from a diffused current flows from the electron supplying layer to the surface layer through the electron transferring layer. Thereby excellent electron emitting characteristic is obtained.

Electron-emitting device

An information recording and reproducing device includes an inorganic recording medium having at least one material selected from the group consisting of a phase change material, a shape changing material and a magnetic material. A conductive probe, which is proximate to or contacting a recording surface of the recording medium, is movable relative to the recording medium. Information is recorded by heating the recording medium in the area where the conductive probe is proximate or contacting to change a physical state therein. The area of the recording medium where the conductive probe is proximate or contacting is heated by applying voltage between the conductive probe and the recording medium.

High density recording by a conductive probe contact with phase change

Heat sensitive color developing material and heat sensitive element

The single electron tunnel device of this invention includes: a multiple tunnel junction layer including multiple tunnel junctions; and first and second electrodes for applying a voltage to the multiple tunnel junction layer, wherein the multiple tunnel junction layer includes an electrically insulating thin film and metal particles and/or semiconductor particles dispersed in the electrically insulating thin film.

Single electron tunnel device and method for fabricating the same

A phosphor thin film of a compound of zinc, cadmium, manganese or alkaline earth metals and an element of group VI is sandwiched by barrier layers having a larger energy gap than that of the phosphor thin film, and a plurality of the sandwich structures are accumulated thicknesswise to constitute a light-emitting device. The phosphor thin film ensures the confinement of injected electrons and holes within the phosphor thin film. The light-emitting device has a high brightness and a high efficiency.

Light-emitting thin film and thin film EL device

The dynamic quantity sensor includes an electrically insulating substance layer and at least one pair of electrodes contacting the electrically insulating substance layer, wherein a plurality of conductive particles are dispersed in the electrically insulating substance layer so that a tunnel current flows when a voltage is applied between the at least one pair of electrodes, and a dynamic quantity relating to a distance between the conductive particles is detected based on the tunnel current.

Dynamic quantity sensor and method for producing the same, distortion

An atomic force microscope is preferably used to observe a sample surface and measure a surface profile of a sample by making use of interatomic forces existing between a probing tip and the sample surface. The atomic force microscope includes a cantilever having a probing tip, a laser diode for emitting a laser beam, a lens for focusing the laser beam emitted from the laser diode on the cantilever, and a photodiode for detecting a light beam reflected from the cantilever to thereby detect the amount of deflection of the cantilever. The atomic force microscope further includes a mechanism for finely moving one of a sample and the cantilever in three different directions, and a controller or computer for controlling the mechanism and for imaging the sample surface based on the amount of deflection of the cantilever at a plurality of locations of the sample surface. By this construction, after measurement of the sample surface at a first location thereof, the sample is moved away from the probing tip by a given length and is further moved relative to the probing tip so that the probing tip is positioned above a second location of the sample. Thereafter, the sample is further moved towards the probing tip at the second location by a length substantially equal to the given length. The movement of the sample is repeated until measurements of the sample surface at the plurality of locations thereof are completed.

Method of measuring a surface profile using an atomic force microscope

A novel type projection TV has a large size fluorescent screen bearing three kinds of dots or stripes of fluorescent material which emits visible lights of red, green and blue at excitation by UV-rays, which are emitted from UV-emitting CRTs' for red, green and blue pixel of image, respectively; and a mask having UV-light passing apertures or a lens array is disposed on light paths of the UV-rays to improve color purity,

Display apparatus and method of making the same

A microscope comprises a cantilever having a distal end equipped with an electrically conductive probe allowing current to flow and having a fine tip whose voltage is controllable, a position control mechanism for controlling position of a sample with respect to a base end of the cantilever, a small displacement measuring mechanism for measuring a deflection amount of the cantilever, and a deflection control mechanism for controlling deflection of the cantilever so as to adjust a distance between the fine tip of the probe and the sample. A method for measuring surfaces using this novel microscope comprises steps of: maintaining deflection of the cantilever at a constant value by using the small displacement measuring mechanism and the deflection control mechanism; applying a constant voltage between the electrically conductive probe and the sample; scanning the sample along surface of the sample with the probe, while a tunneling current is maintained at a constant value by using the position control mechanism; and measuring a control amount of the position control mechanism in a direction vertical to the sample and a control amount of the deflection control mechanism.

Scanning probe microscope and method for measuring surfaces by using

A fabrication method provides fine structures which have few carrier trap centers and light absorption levels and find applications in quantum wires and quantum boxes having arbitrary configurations at least within a two-dimensional plane. The fabrication method comprises the steps of having a sharp tip held in close proximity to the surface of a substrate 1 and having a metal constituting the tip evaporated from the top. Alternatively, a metal contained in ambient vapor or a solution decomposed by a tunnel current or the like is provided. The metal is deposited locally on the substrate surface. A finely structured crystal is grown on the locally deposited region by a vapor phase-liquid phase-solid phase reaction.

Fabrication method of fine structures

A cantilever for an atomic force microscope, has a probe formed by a structure at least partially including a linear needle crystal. A method of manufacturing the cantilever comprises the steps of applying adhesive to a distal end portion of a cantilever body and placing on the adhesive, in a state where the cantilever body is held substantially horizontally, a structure having the shape of at least four needle crystals combined with one another so as to bond the structure to the distal end portion of the cantilever body.

Cantilever for atomic force microscope and method of manufacturing the

A method of making a cantilever stylus for an atomic force microscope comprises forming a film on a surface of a substrate, the film comprising a stylus material that is different from the material of the substrate. A resist thin film of a material different from the stylus material is formed on the surface of the stylus material so as to have a tip. The stylus material is then etched with an isotropic etching technique to a depth of etching greater than the radius of curvature of the tip of the resist film so that the stylus material, having two opposite principal surfaces, has a tip formed on one of the principal surfaces with a radius of curvature less than 0.1 .mu.m which protrudes beyond a tip of the other principal surface. At least the resist thin film and the substrate at the tips of the principal surfaces of the stylus material are then removed.

Method of making a cantilever stylus for an atomic force microscope

An atomic force microscope for observing a sample surface (7) is internally provided with a cantilever stylus (1, 14, 23) and makes use of atomic forces acting between the cantilever stylus (1, 14, 23) and the sample surface. The cantilever stylus (1, 14, 23) includes a cantilever (2, 15, 22) having a fixed end and a free end and having two principal surfaces. The cantilever stylus (1, 14, 23) further includes two tip portions formed in the principal surfaces of the free end, respectively. One of the two tip portions has a radius of curvature less than 0.1 .mu.m and protrudes beyond the other tip portion so that the former may be used to observe the sample surface (7).

Cantilever stylus for use in an atomic force microscope and method of

A cantilever stylus suited for use in an atomic force microscope is made in the following processes: forming a first film on a substrate; forming a second film of metallic material on an external surface of the first film; forming a photoresist film on an external surface of the second film by making use of a photolithography technique; performing etching with respect to the second film with only a portion thereof covered with the photoresist film left on the first film; and further performing etching with respect to the first film with the second film being used as a resist film so that the first film may be configured into a cantilever stylus.

Method of making a cantilever stylus for use in an atomic force

A dielectric thin film element comprising a dielectric substrate and a dielectric thin film formed on the substrate. The thin film is made of a perovskite type oxide and formed by sputtering in an atmosphere containing nitrogen, by which the dielectric constant and the breakdown electric field strength are greatly improved. Thin film devices using the film and a method for making the thin film are also described.

Growing community of inventors

Ikoma, Japan

Takao Tohda