Shin-etsu Handotai Co., Ltd.

Shin-etsu Handotai Kabushiki Kaisha

Shin-etsu Handotai Company Limited of Japan

Takao Takenaka

Masato Yamada

Nobuhiko Noto

Yutaka Kitagawara

Keizo Adomi

Ryoji Hoshi

Akio Nakamura

Masahisa Endo

Susumu Kuwahara

Shinji Orimo

Masaro Tamatsuka

Hiroshi Takeno

Ken Aihara

Hitoshi Ikeda

Satoshi Tobe

Toshio Otaki

Hiroshi Kubota

Kazuhisa Takamizawa

Satoshi Ushio

Provided are a thin film silicon wafer having high gettering capability, a manufacturing method therefor, a multi-layered silicon wafer formed by laminating the thin film silicon wafers, and a manufacturing method therefor. The thin film silicon wafer is manufactured by: forming one or more gettering layers immediately below a device layer which is formed in a vicinity of a front surface of a semiconductor silicon wafer; fabricating a device in the device layer of the semiconductor silicon wafer; and after the device has been fabricated, removing part of the semiconductor silicon wafer from a rear surface thereof to immediately below the gettering layers so as to leave at least one of the gettering layers in place. As a result, the thin film silicon wafer is allowed to have gettering capability even after having been reduced in thickness to be in a thin film form.

Thin film silicon wafer and method for manufacturing the same

The present invention provides an AlGaInP light-emitting device with a longer life and higher reliability. The AlGaInP light-emitting device comprises an n-type (Al.sub.0.7 Ga.sub.0.3).sub.0.51 In.sub.0.49 P cladding layer (about 1 .mu.m in thickness), an (Al.sub.0.15 Ga.sub.0.85).sub.0.51 In.sub.0.49 P active layer (about 0.6 .mu.m in thickness), a p-type (Al.sub.0.7 Ga.sub.0.3).sub.0.51 In.sub.0.49 P cladding layer (about 1 .mu.m in thickness), and a p-type current-spreading layer composed of either a p-type Al.sub.0.7 Ga.sub.0.3 As layer (about 3 .mu.m in thickness) or a p-type Al.sub.0.7 Ga.sub.0.3 As.sub.0.97 P.sub.0.03 layer (about 3 .mu.m in thickness) and a p-type GaAs.sub.0.5 P.sub.0.5 layer (about 7 .mu.m in thickness), in sequence formed on an n-type GaAs substrate, and further an upper surface electrode mounted on the p-type GaAs.sub.0.5 P.sub.0.5 layer and a lower surface electrode mounted on the lower surface of the n-type GaAs substrate.

Algainp light-emitting device

A lifetime related quality evaluation method, used with a semiconductor wafer having a semiconductor thin layer over the main surface of a semiconductor substrate, for evaluating the lifetime related quality of the semiconductor thin layer and/or the vicinity thereof, characterized by: generating electron-hole pairs in the vicinity of a surface of the semiconductor thin layer by the use of excitation light having a larger energy than the band gap of a semiconductor to be tested; then detecting the intensity at a particular wavelength of light emitted by recombination of the electron-hole pairs; and evaluating the lifetime related quality of the semiconductor thin layer and/or the vicinity thereof based on the detected intensity. The lifetime related quality evaluation method realizes a non-contact, non-destructive quality evaluation of the epitaxial semiconductor wafer.

Method of evaluating lifetime related quality of semiconductor surface

A semiconductor light emitting device comprising an n-type GaAs substrate, a light emitting layer portion consisting of an AlGaInP double heterojunction structure formed on the substrate, and a p-type current spreading layer formed on the light emitting layer portion, wherein the p-type current spreading layer comprises an undoped current spreading layer and a heavily-doped current spreading layer formed on said undoped current spreading layer. With this construction, it is possible to achieve a stable control of carrier concentration in a p-type cladding layer, to prevent deterioration of the interface between the p-type cladding layer and an active layer and also to prevent crystallinty-deterioration of the active layer with the result that the emission intensity of the device can be increased to a considerable extent.

Semiconductor light emitting device with current spreading layer

According to the invention, it is sought to provide a method of evaluating single crystal of silicon, which permits determination of the amount of precipitated oxygen of even a sample having been heat treated and with unknown initial interstitial oxygen concentration. X-rays radiated from X-ray source 7 is converted by slit 6 into a thin, parallel incident X-ray beam 3 to be incident on sample single crystal 1. After adjusting the angle .theta.1 of sample with respect to the incident X-ray beam such as to satisfy Bragg conditions, diffracted X-rays 4 produced by diffraction on the sample single crystal 1 are coupled from the back side thereof through X-ray receiving slit 8 to scintillator 5 for intensity measurement. The amount of precipitated oxygen is calculated from the measured diffracted X-ray intensity.

Method of evaluating a silicon single crystal

An epitaxial layer(s) of compound semiconductor alloy doped with nitrogen and represented by the formula (Al.sub.x Ga.sub.1-x).sub.y In.sub.1-y P (0&lt;x.ltoreq.1, 0&lt;y.ltoreq.1) is formed on a compound semiconductor single crystal substrate composed of an element(s) from Group III and an element(s) from Group V in the periodic table by means of the metalorganic vapor phase epitaxy method (MOVPE method), while controlling the amount of the organic aluminum compound introduced. The organic aluminum compound is, for example, trimethyl aluminum (TMAl). The nitrogen-doped epitaxial layer is, for example, an active layer composed of said compound semiconductor alloy which has a band gap of 2.30 eV or larger and also has an alloy composition of an indirect transition area or similar to it.

Semiconductor light emitting device and methods of manufacturing it

A method for fabricating a semiconductor device includes the steps of growing a second semiconductor layer on a first semiconductor layer which is highly doped with an impurity such as Zn and diffusing the impurity concurrently with the growing step of the second semiconductor layer from the first semiconductor layer as an impurity source to the second semiconductor layer to have a predetermined carrier concentration profile, by controlling both the diffusing speed of said impurity and the growing speed of said second semiconductor layer by changing the temperature in accordance with a predetermined sequence to have a predetermined carrier concentration profile in the second semiconductor layer.

Method for fabricating a semiconductor device

The height x.sub.i (i=1, 2, . . . , N) of a plurality of measuring points on a silicon wafer from a reference plane is measured by means of an AFM (atomic force microscope), the autocorrelation function R.sub.j represented by the equation below is determined: ##EQU1## Where x denotes: ##EQU2## is determined, an arbitrary number of autocorrelation function R.sub.j with large value from said autocorrelation function R.sub.j are selected, and the microroughness on said silicon wafer is analyzed based on the distances between the point R.sub.j=0 and said selected points R.sub.j 's with large value except for R.sub.j=0.

Method of evaluating silicon wafers

An AlGaInP double heterojunction structure or an AlGaInP single heterojunction structure is formed on a first conductivity-type GaAs substrate, and then a layer made of a second conductivity-type Al.sub.w Ga.sub.1-w As.sub.1-v P.sub.v mixed crystal (Al.sub.0.7 Ga.sub.0.3 As.sub.0.97 P.sub.0.03, for example) which has the bandgap energy larger than the energy of photon emitted from the active layer of said light emitting layer portion, and has good lattice-matching with (Al.sub.B Ga.sub.1-B).sub.0.51 In.sub.0.49 P mixed crystal (layer) constituting said light emitting layer portion, is formed as a current spreading layer on top of said light emitting layer portion. Here, w and v are in the range of 0.45.ltoreq.w&lt;1 and 0&lt;v.ltoreq.0.08, respectively.

AlGaInP light emitting device

A semiconductor light emitting device has a light emitting layer portion comprising AlGaInP layers formed on a GaAs substrate. A light reflecting layer portion comprising alternately laminated layers with different refractive indices is provided between the GaAs substrate and the light emitting layer portion. The light reflecting layer portion comprises Al.sub.w Ga.sub.1-w As.sub.1-v P.sub.v layers (where: 0.ltoreq.w.ltoreq.1, 0&lt;v.ltoreq.0.05 w). An active layer which constitutes the light emitting layer portion comprises an (Al.sub.y Ga.sub.1-y).sub.0.51 In.sub.0.49 P layer (where: 0.ltoreq.y.ltoreq.0.7).

Semiconductor light emitting device having AlGaAsP light reflecting

Semiconductor light emitting device with nitrogen doping

Disclosed are a light-emitting semiconductor device substrate and a method of manufacturing the same. The substrate is prepared by causing a Ga.sub.1-x Al.sub.x As compound semiconductor single crystalline thick-film layer having a first AlAs mole fraction and a low Al containing and oxidation-delaying Ga.sub.1-y Al.sub.y As compound semiconductor single crystalline thin film serving as a surface protective layer and having a second AlAs mole fraction to be sequentially grown on a GaAs crystal substrate. The method comprises the step of causing the thick-film layer and the thin film to be sequentially grown on the GaAs crystal substrate. The GaAs crystal substrate is removed after sequential epitaxial growth of the thick-film layer and thin film on the GaAs crystal substrate.

Method of manufacturing a light-emitting semiconductor device substrate

A method and apparatus disclosed by this invention allows determination of the interstitial oxygen concentration in a silicon single crystal to be effected stably and accurately without being appreciably affected by change of the temperature of a sample under test. The interstitial oxygen concentration in the silicon single crystal is determined on the basis of the value of:

Method and apparatus for determination of interstitial oxygen

A method and an apparatus capable of efficiently producing an epitaxial layer grown at one time on a multiplicity of substrates with uniform thickness and quality are disclosed, in which a sealable growth chamber filled in a solution used to achieve liquid-phase epitaxial growth and holding therein at least one row of thin plate-like substrate is turned about the horizontal axis. The growth chamber is tilted or overturned so that the solution in the growth chamber is stirred homogeneously and the effect of gravity on the solution is excluded. A solution chamber for holding therein the solution is connected with the growth chamber via a gate valve. After the liquid-phase epitaxial growth, the growth chamber is overturned and then the gate valve is opened so that the solution in the growth chamber returns to the solution chamber. Thus, reuse of the solution is possible.

Apparatus for liquid-phase epitaxial growth

To manufacture epitaxial wafers with a smaller amount of semiconductor crystals at a lower cost by means of an efficient epitaxial growth process. An epitaxial wafer is made by forming, by means of epitaxial growth, GaAlAs layers with identical structures on both sides of a GaAs substrate wafer with the crystal plane orientation of {100}. The epitaxial wafer is then divided in the GaAs substrate wafer portion into two pieces to obtain two epitaxial wafers. To perform the epitaxial growth process, a plurality of GaAs substrate wafers are held at their edges and then the GaAs substrate wafers are placed in a Ga solution at prescribed spatial intervals. To divide the epitaxial wafer in the GaAs substrate portion into two pieces, the substrate wafer portion is cut parallel to the main surface. Or, the GaAs substrate wafer can also be removed by means of etching while the epitaxial wafer is rotated at a high speed in the etching solution.

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Annaka, Japan

Takao Takenaka