Japan Science and Technology Agency

Tokyo Institute of Technology

Kawasaki Steel Corporation

Tdk Corporation

Ntt Docomo, Inc.

National Institute of Advanced Industrial Science and Technology

Nippon Electric Co., Ltd.

Nihon Parkerizing Co., Ltd.

Takao Shimizu

Hiroshi Funakubo

Yasuyoshi Watanabe

Koji Kishimoto

Takanori Mimura

Yoshiko Nakamura

Yutaka Ito

Satoshi Ishii

Yusuke Sato

Morito Akiyama

Atsushi Hori

Masao Inaba

Kei Andou

Kuniyuki Kakushima

Masato Uehara

Wakiko Sato

Atsumi Sugimoto

Toshimichi Ukena

Ichiro Fujiwara

Atsushi Nagashima

Mirai Ishida

Shun-ichiro Ohmi

Shinnosuke Yasuoka

Miyu Hasegawa

Keisuke Ishihama

Yu-ki Tashiro

Reijiro Shimura

Joel Molina Reyes

Hiroshi Narumi

Takeo Emori

Yuzo Inoue

Takayuki Ino

Akifusa Ohnishi

Kyoko Noguchi

Provided is a method for forming a ferroelectric film of a metal oxide having a fluorite-type structure at a low temperature of lower than 300° C., and a ferroelectric film obtained at a low temperature. The present invention provides a production method of a ferroelectric film comprising a crystalline metal oxide having a fluorite-type structure of an orthorhombic crystal phase, which comprises using a film sputtering method comprising sputtering a target at a substrate temperature of lower than 300° C., to deposit on the substrate a film of a metal oxide which is capable of having a fluorite-type structure of an orthorhombic crystal phase, and having a subsequent thermal history of said film of lower than 300° C.; or applying an electric field to said film after said deposition or after said thermal history of lower than 300° C. Also provided are the ferroelectric film, which is formed on an organic substrate, glass, or metal substrate, which can be used only at low temperatures, and a ferroelectric element and a ferroelectric functional element or device using the ferroelectric film.

Method for producing ferroelectric film, ferroelectric film, and usage thereof

The invention provides a non-volatile storage element and non-volatile storage device employing a ferroelectric material with low power consumption, excellent high reliability, and especially write/erase endurance, which can be mixed with advanced CMOS logic. The non-volatile storage element has at least a first conductive layer, a second conductive layer, and a ferroelectric layer composed of a metal oxide between both conductive layers, with a buffer layer having oxygen ion conductivity situated between the ferroelectric layer and the first conductive layer and/or second conductive layer. An interface layer composed of a single-layer film or a multilayer film may be also provided between the first conductive layer and the ferroelectric layer, the interface layer as a whole having higher dielectric constant than silicon oxide, and when the buffer layer is present between the first conductive layer and the ferroelectric layer, the interface layer is situated between the first conductive layer and the buffer layer. The non-volatile storage device comprises at least a memory cell array comprising low-power-consumption ferroelectric memory elements formed in a two-dimensional or three-dimensional configuration, and a control circuit. The ferroelectric layer is scalable to 10 nm or smaller and is fabricated at a low temperature of ≤400° C., and is subjected to low temperature thermal annealing treatment at ≤400° C. after the buffer layer has been formed, to provide high reliability.

Non-volatile ferroelectric storage element and devices comprising them

Provided is a dielectric thin film including a metal oxide. The metal oxide includes bismuth, sodium, barium, and titanium, at least a part of the metal oxide is a tetragonal crystal having a perovskite structure, and a (100) plane of at least a part of the tetragonal crystal is oriented in a normal direction of a surface of the dielectric thin film.

Dielectric thin film, dielectric thin film element, piezoelectric actuator, piezoelectric sensor, head assembly, head stack assembly, hard disk drive, printer head and inkjet printer device

It is an object to provide a ferroelectric thin film having much higher ferroelectric properties than conventional Sc-doped ferroelectric thin film constituted by aluminum nitride and also having stability when applied to practical use, and also to provide an electronic device using the same. There are provided a ferroelectric thin film represented by a chemical formula M1M2N, wherein M1 is at least one element selected from Al and Ga, M2 is at least one element selected from Mg, Sc, Yb, and Nb, and X is within a range of 0 or more and 1 or less, and also an electronic device using the same.

Ferroelectric thin film, electronic element using name, and method for manufacturing ferroelectric thin film

A technique is provided that is for efficiently avoiding interference that occurs due to simultaneous communication with different radio systems. An aspect of the present invention relates to user equipment including a cellular communication controller that controls first radio communication with a cellular system, and a different radio system communication controller that controls second radio communication with a different radio system other than the cellular system, wherein the cellular communication controller reports, to the cellular system, interference notice indicating interference between the first radio communication and the second radio communication, based on information obtained in the first radio communication.

User equipment

Novel calcium-independent phospholipases A; genes encoding the same; an antibody against them; an inherent promoter or a regulator gene which comprises a base sequence occurring in intron and inducing site-specific expression in response to an external stimulus; a method of expressing a target protein in response to an external stimulus; and an organism having this gene transferred thereinto. Novel calcium-independent phospholipases Ahaving an amino acid sequence represented by SEQ ID NO: 1, 3 or 5 or an amino acid sequence derived from such an amino acid sequence by the substitution, deletion or addition of one or more amino acids; a gene having a base sequence occurring in an intron and being capable of initiating RNA transcription due to an external stimulus such as a stimulus with kainic acid or an electrical stimulus; a method of regulating expression by using the gene; and an organism having the gene transferred thereinto.

Promoter of novel calcium-independent phospholipase A2

It is intended to provide a novel receptor of LPA and a method of screening a drug such as an LPA receptor antagonist using the same. Use as a lysophosphatidic acid (LPA) receptor comprising a G protein-coupled protein p2y9. More specifically, use of the G protein-coupled protein p2y9 as a lysophosphatidic acid (LPA) receptor. A method of screening an agonist or an antagonist to the LPA receptor as described above by using the receptor.

Lysophosphatidic acid receptor

[object Object]

The present invention is to provide a method for treating sludge as a by-product of a process of tin electroplating a steel plate by means of a plating bath containing haloid ions, together with an equipment therefor. More specifically, by immersing the sludge in water prior to filtration, the residual sludge is subjected to alkali hydrolysis in the presence or absence of the ions of an alkali earth metal within a temperature range of 100.degree. to 400.degree. C., whereby cyanide compounds and fluoride compounds contained therein under environmental regulations are prepared into environmentally non-hazardous matters. By adjusting the filtrate to pH 7.5 to 10, the precipitate with the principal component of tin hydroxide is deposited to recover the tin components contained in the sludge. Furthermore, the recovered tin is refined into the metal tin, for recycling and use as the electrode by the plating.

Method for treating sludge precipitated in a plating bath containing

A device according to the invention comprises trolleys arranged above a plating bath and movable in transverse directions of a steel strip, guide rollers secured to lower ends of vertical levers depending from the trolleys and in contact with edges of the strip by urging means such as counter weights acting upon the vertical levers, and shielding plates secured to the lower ends of the vertical levers below the guide rollers so as to shield undersides of the strip in the proximity of the edges from anodes immersed in the plating bath in opposition to the strip. The device according to the invention can maintain the positional relation between the edges of the strip and shielding plates notwithstanding staggering movements of the strip to prevent the edges of the strip from being excessively plated.

Strip edge overcoating preventing device for continuous electroplating

A frame synchronizer for a television receiver in which the incoming television signal is digitized and stored in a memory, includes a circuit for generating a write-inhibit control signal for inhibiting the write-in of a digitized second television signal into the memory between the switchover from a first television signal to the second television signal and the beginning of a complete frame of the second television signal.

Frame synchronizer having a write-inhibit circuit

Growing community of inventors

Tokyo, Japan

Takao Shimizu