Kabushiki Kaisha Toshiba

Toshiba Materials Co., Ltd.

Other

Tokyo Shibaura Denki Kabushiki Kaisha

Kabushiki Kaishi Toshiba

Takao Sawa

Masami Okamura

Fumiyuki Kawashima

Tatsuoki Kohno

Katsutoshi Nakagawa

Tadahiko Kobayashi

Norio Takami

Hideki Yoshida

Shinsuke Matsuno

Masaaki Yamamoto

Shinya Sakurada

Noriaki Yagi

Motoya Kanda

Takao Kusaka

Masao Obama

Isao Sakai

Teruo Murakami

Hisashi Takahashi

Masashi Sahashi

Tadao Saito

Akiko Saito

Koichiro Inomata

Tomohisa Arai

Susumu Hashimoto

Shinichi Murata

Tsuyoshi Kobayashi

Makoto Hayashi

Takamichi Inaba

Shusuke Inada

Yumiko Takahashi

Yoshiyuki Yamauchi

Hirotaka Hayashida

Hiroshi Kitayama

Katsuhiko Yamada

Toshiya Sakamoto

Shirou Takeno

Masaaki Yagi

Hiroyuki Hasebe

Yoshiyuki Isozaki

Motoyasu Mochizuki

Hiromichi Horie

Yukihiro Fukuta

Tatsuoki Kono

Hiromi Shizu

Sadayoshi Hibino

Tadayuki Sato

Yasuo Sakata

Yoshiko Kanazawa

Shigeo Ozawa

Tadatomo Kimura

Susumu Matsushita

Yumie Watanabe

Hiroshi Sasaki

Masaya Hagiwara

Yosuke Horiuchi

Wu Mei

Yumi Fujita

Keiichi Fuse

Masaki Endo

Keisuke Hashimoto

Naoyuki Sanada

Michio Hasegawa

Akira Ishii

Akihiko Tsutai

Masakatsu Haga

Satoru Habu

Yoshiyuki Yamaguchi

Noriaki Sato

Taiju Yamada

Takao Kusada

Osamu Arakawa

Masaki Sahashi

Kiyoshi Nagasaki

A magnetic sheetof an embodiment includes a stack of a plurality of magnetic thin strips and resin film parts. The stack includes from 5 to 25 pieces of the magnetic thin strips. The magnetic thin strips are provided with cutout portions each having a width of 1 mm or less (including 0 (zero)). A ratio (B/A) of a total length B of the cutout portions provided to the magnetic thin strip to a total outer peripheral length A of an outer peripheral area of the magnetic thin strip arranged on one of the resin film parts is in a range of from 2 to 25.

Magnetic sheet and non-contact power receiving device, electronic apparatus and non-contact charging system using the same

A permanent magnet of the embodiment includes: a composition represented by a composition formula: R(FeMCuCCo)(R is at least one element selected from rare-earth elements, M is at least one element selected from Ti, Zr and Hf, 0.27&#x2264;p&#x2264;0.45, 0.01&#x2264;q&#x2264;0.05, 0.01&#x2264;r&#x2264;0.1, 0.002&#x2264;t&#x2264;0.03, and 6&#x2264;z&#x2264;9); and a metallic structure including a main phase containing a ThZncrystal phase, and a sub phase of the element M having an element M concentration of 30 atomic % or more. The sub phase of the element M precipitates in the metallic structure. A ratio of a circumferential length to a precipitated area of the sub phase of the element M is 1 or more and 10 or less.

Permanent magnet, and motor and generator using the same

A thermoelectric conversion material made of a polycrystalline material represented by a composition formula (1) shown below and having an MgAgAs type crystal structure is provided. An insulating coat is provided on at least one surface of the polycrystalline material. Composition formula (1): (ATi)DX, wherein 0.2&#x2266;a1&#x2266;0.7, 0.3&#x2266;b1&#x2266;0.8, a1+b1=1, 30&#x2266;x&#x2266;35, 30&#x2266;y&#x2266;35 hold, wherein A is at least one element selected from the group consisting of Zr and Hf, D is at least one element selected from the group consisting of Ni, Co, and Fe, and X is at least one element selected from the group consisting of Sn and Sb.

Thermoelectric conversion material, thermoelectric conversion module using the same, and manufacturing method of the same

According to an embodiment, a thermoelectric conversion material is made of a polycrystalline material which is represented by a composition formula (1) shown below and has a MgAgAs type crystal structure. The polycrystalline material includes a MgAgAs type crystal grain having regions of different Ti concentrations.(ATi)DX&#x2003;&#x2003;Composition formula (1)wherein 0.2&#x2266;a&#x2266;0.7, 0.3&#x2266;b&#x2266;0.8, a+b=1, 0.93&#x2266;c&#x2266;1.08, and 0.93&#x2266;e&#x2266;1.08 hold when d=1; A is at least one element selected from the group consisting of Zr and Hf, D is at least one element selected from the group consisting of Ni, Co, and Fe, and X is at least one element selected from the group consisting of Sn and Sb.

A magnetic sheet of an embodiment includes a laminate of a plurality of magnetic thin plates. The laminate constituting the magnetic sheet includes a first magnetic thin plate and a second magnetic thin plate different in kind from the first magnetic thin plate. The first magnetic thin plate has a magnetostriction constant exceeding 5 ppm in an absolute value, and the second magnetic thin plate has a magnetostriction constant of 5 ppm or less in an absolute value. Alternatively, the first magnetic thin plate has a thickness of from 50 to 300 &#x3bc;m, and the second magnetic thin plate has a thickness of from 10 to 30 &#x3bc;m.

Magnetic sheet for non-contact power receiving device, non-contact power receiving device, electronic apparatus, and non-contact charger

A solid scintillator in an embodiment includes a polycrystal body of an oxide having a garnet structure. In the solid scintillator, a linear transmittance at a wavelength of 680 nm is 10% or more. The oxide constituting the solid scintillator has a composition represented by, for Example, General formula: (GdTbLuCe)(AlGa)O, wherein 0&#x3c;&#x3b1;&#x2266;0.55, 0&#x3c;&#x3b2;&#x2266;0.55, 0.0001&#x2266;&#x3b3;&#x2266;0.1, &#x3b1;+&#x3b2;+&#x3b3;&#x3c;1, 0&#x3c;x&#x3c;1, 4.8&#x2266;a&#x2266;5.2, 11.6&#x2266;b&#x2266;12.4.

Solid scintillator, radiation detector, and radiation examination device

In an embodiment, a solid state scintillator material includes a composition represented by a general formula: (GdTBLuCe)(AlGa)O, where &#x3b1; and &#x3b2; are numbers satisfying 0&#x3c;&#x3b1;&#x2266;0.5, 0&#x3c;&#x3b2;&#x2266;0.5, and &#x3b1;+&#x3b2;&#x2266;0.85, &#x3b3; is a number satisfying 0.0001&#x2266;&#x3b3;&#x2266;0.1, x is a number satisfying 0&#x3c;x&#x3c;1, a is a number satisfying 4.8&#x2266;a&#x2266;5.2 and b is a number satisfying 11.6&#x2266;b&#x2266;12.4 (atomic ratio), and a garnet structure.

Solid state scintillator material, solid state scintillator, radiation detector, and radiation inspection apparatus

An electrode material includes an alloy having a GdNiSntype crystal structure.

Electrode material, method of manufacturing the electrode material, electrode, and nonaqueous electrolyte battery

A nonaqueous electrolyte battery includes a positive electrode, a negative electrode and a nonaqueous electrolyte. The negative electrode contains an intermetallic compound having an LaCoSntype crystal structure of which alkaline-earth metal atoms occupy La sites. The nonaqueous electrolyte contains at least one of methyl ethyl carbonate and dimethyl carbonate.

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The present invention provides a nonaqueous electrolyte secondary battery including a positive electrode, a negative electrode and a nonaqueous electrolyte. The negative electrode contains an alloy having a CeNiSitype crystal structure.

Nonaqueous electrolyte secondary battery

A nonaqueous electrolyte secondary battery includes a case, a nonaqueous electrolyte provided in the case, a positive electrode provided in the case and capable of absorbing-releasing Li, and a negative electrode provided in the case and containing an alloy that has a LaCoSntype crystal structure.

The present invention provides a hydrogen absorbing alloy containing as a principal phase at least one phase selected from the group consisting of a second phase having a rhombohedral crystal structure and a first phase having a crystal structure of a hexagonal system excluding a phase having a CaCutype structure, wherein a content of a phase having a crystal structure of ABtype is not higher than 10% by volume including 0% by volume and the hydrogen absorbing alloy has a composition represented by general formula (1) given below:RMgTNiM1M2Mn&#x2003;&#x2003;(1).

Hydrogen absorbing alloy and secondary battery

The present invention provides a hydrogen absorbing alloy containing as a principal phase at least one phase selected from the group consisting of a second phase having a rhombohedral crystal structure and a first phase having a crystal structure of a hexagonal system excluding a phase having a CaCutype structure, wherein a content of a phase having a crystal structure of ABtype is not higher than 10% by volume including 0% by volume and the hydrogen absorbing alloy has a composition represented by general formula (1) given below:MgTNiM1M2Mn.&#x2003;&#x2003;(1)

The magnetic material for magnetic refrigeration of the present invention is characterized by exhibiting, in a certain temperature region, preferably, only in part of a temperature region from 200 K to 350 K, an inflection point at which a second order differential coefficient of a magnetization curve changes from positive to negative with respect to a magnetic field, within the range of this magnetic field formed using a permanent magnet unit. This magnetic material of the present invention can generate a low temperature by using a relatively low magnetic field, by transferring the entropy between the electron spin system and the lattice system near the temperature at which an inflection point appears on the magnetization curve. Examples of the magnetic material meeting this condition are La(Fe,Si), (Hf,Ta)Fe, (Ti,Sc)Fe, and (Nb,Mo)Fe, each containing 50 to 60 atomic % of transition metals such as Fe.

Magnetic material

Growing community of inventors

Yokohama, Japan

Takao Sawa