Ngk Insulators, Inc.

Toyota Jidosha Kabushiki Kaisha

Nippondenso Co., Ltd.

Toyota Boshoku Kabushiki Kaisha

Kabushiki Kaisha Saikosha

Aisin Seiki Kabushiki Kaisha

Takao Saito

Susumu Akiyama

Yoshihisa Sato

Yoshimasa Kondo

Katsunori Ito

Yuji Hirabayashi

Tatsuya Terazawa

Tetsuo Tanigawa

Minoru Imaeda

Yuichiro Imanishi

Yukinori Nakamura

Kazuyuki Shiga

Katsuhiro Ina

Kunihiko Kondo

Takahiro Yasuda

Naoto Ohtake

Toshinao Wada

Seiichiro Hayashi

Naoki Maeda

Teruyoshi Mori

Susumu Matsuoka

Masaki Sugimoto

Takehide Shimoda

Takashi Matsukubo

Hiroshi Kuwahara

Katsonori Ito

Yugi Hirabayashi

Masashi Hayakawa

A vehicle seat includes: a seat frame; a seat cover provided with a rupture portion; an airbag disposed in the seat; a pair of webbings provided so as to surround the airbag on a back surface side of the seat cover, one end sides of the webbings being mounted to the rupture portion; and a mounting section mounting the other end sides of the webbings to the seat frame. In a vehicle collision, the airbag is protruded out of the seat by rupturing and opening the rupture portion. The mounting section is provided at a place where a body of the seat frame is disposed. When the airbag is uninflated, the mounting section holds the other ends of the webbings apart from the body of the seat frame, and an inhibition portion in the mounting section inhibits contact between an edge-shaped portion formed in the body and the webbings.

Vehicle seat

A DLC film mass-producing apparatusincludes a chamberconnected to ground. In the chamber, a plurality of plate-shaped substratesare disposed in parallel at regular intervals, without disposing a counter electrode that faces each of the plate-shaped substrates. Sputtering cleaning is then conducted by plasma discharge and an underlying contact layer is formed on each of the plate-shaped substrates. Subsequently, a DLC film is produced on each of the plate-shaped substratesby injecting a carbon source gas into the chambersuch that the internal pressure of the chamberreaches 0.1 to 10 Pa and applying a negative DC pulse voltage having a pulse half width of 0.1 to 3 &#x3bc;sec to each of the plate-shaped substratesto generate plasma.

Method and apparatus for mass-producing DLC films

A slide member is slidable along a slide rail provided at a vehicle-body side portion. When lock pawls provided at the slide member are engaged with the slide rail, the slide member is locked. The slide member is unlocked by operating an operation cable connected to the lock pawls. The operation cable is fitted to a fitting portion of an attachment bracket connected to the slide rail. A portion from a fixed portion fixed to the fitting portion to a movable portion (one end portion) extends through a region where a non-contact portion is disposed, and does not contact the non-contact portion. The movable portion is connected to the slide member and moved integrally with the slide member.

Vehicle seat reclining apparatus

A die for forming the honeycomb structure includes: a plate-like die main body including an introducing portion provided on the side of one surface thereof and having a plurality of back holes and a forming portion provided on the side of the other surface thereof and having slits; and a back plate detachably attached to the surface of the introducing portion and having a plurality of through holes connected to the back holes of the introducing portion. Through hole opening portions of the through holes formed in the back plate in the one surface of the die main body have such an enlarging shape as to enlarge toward the one surface of the die main body. The die for forming the honeycomb structure can decrease the resistance of a forming material during extrusion.

Die for forming honeycomb structure

There is provided a mold for extrusion forming of ceramic articles which is excellent in wear resistance and can remarkably decrease forming defects in the vicinity of outer peripheries thereof. The mold for the extrusion forming of the ceramic articles includes a diehaving a plurality of back holesand slitsa back pressing plateand a back spacerto adjust the amount of the kneaded clay to be supplied; and a pressing plateand a spacerto regulate the shape and size of the formed ceramic article. At least a portion of the supply endof the diewhich overlaps with the back pressing plateis flattened, and a surface roughness (Ra) thereof is in a range of 0.05 &#x3bc;m to 10 &#x3bc;m.

Mold for extrusion forming of ceramic articles

A method of evaluating kneaded clay includes, preparing kneaded clay by mixing and kneading at least ceramic raw material and water as contained materials, measuring T1 relaxation time and/or T2 relaxation time of proton contained in the contained materials by NMR method, and evaluating a kneaded state of the kneaded clay. There is further provided a method for manufacturing kneaded clay, wherein the kneaded clay is kneaded by using the method for evaluating kneaded clay while checking the kneaded state.

Method for evaluating kneaded clay, and method for manufacturing kneaded clay

A silicon-based thin film depositing apparatus, including a plurality of transparent electrodes disposed to face corresponding counter electrodes with a space therebetween. Subsequently, while injecting a raw material gas from raw material gas injection orifices toward the supporting electrodes and also injecting a barrier gas from barrier gas injection orifices in the same direction as the direction in which the raw material gas is injected, the gases are discharged from a gas outlet, and thereby, the pressure in a chamber is controlled to a pressure of more than 1 kPa. Then, a DC pulse voltage is applied to each counter electrode to deposit a silicon-based thin film. A DC pulse voltage is applied to perform discharge. Therefore, even in a state where the distance between the electrodes is increased, plasma can be generated efficiently, and the in-plane distribution of film thickness can be improved.

Apparatus for depositing silicon-based thin film and method for depositing silicon-based thin film

A silicon-based thin film mass-producing apparatus, including transparent electrodes placed to face in parallel to corresponding counter electrodes with a space therebetween, and silicon-based thin films are deposited on the transparent electrodes by feeding a raw material gas for depositing the silicon-based thin films into the chamber and by applying a DC pulse voltage to the counter electrodes to generate plasma. Unlike methods in which a radio frequency voltage is intermittently applied to perform discharge, a high plasma density distribution does not occur, and in-plane film thickness distribution does not occur. Furthermore, since the DC pulse voltage rises sharply, the ON period can be shortened. As a result, generation of a sheath ceases in the transient state before reaching the steady state, and the thickness of the sheath is small, which allows the space between the counter and transparent electrodes to decrease.

Apparatus for mass-producing silicon-based thin film and method for mass-producing silicon-based thin film

An amorphous carbon film forming apparatus includes a supporting electrode that is connected to ground and supports a substrate, a counter electrode that is disposed so as to face the supporting electrode and has a mixed-gas injection orifice, a chamber containing the supporting electrode and the counter electrode, and a DC pulse generator having a pulse source that applies a DC pulse voltage between the supporting electrode and the counter electrode. An amorphous carbon film is formed by supplying a mixed gas between the supporting electrode and the counter electrode such that the percentage of the acetylene gas relative to the carrier gas is 0.05% by volume or more and 10% by volume or less, and by generating plasma while a DC pulse voltage having a pulse width of 0.1 &#x3bc;sec or more and 5.0 &#x3bc;sec or less is applied to the counter electrode.

Method for forming amorphous carbon film

A direct current pulse voltage is applied on a treatment gas to generate a discharge plasma. The duty ratio of the direct current pulse voltage is controlled within the range of 0.0001% or more and 8.0% or less. The rise time of the direct current pulse voltage is controlled in the range of not lower than 0.1 V/nsec and not higher than 10000 V/nsec. Alternatively, a positive pulse and a negative pulse are applied from a single power source for performing the discharge plasma and the impurity implantation.

Methods of generating plasma, of etching an organic material film, of generating minus ions, of oxidation and nitriding

An object of the present invention is to provide a method of forming a thin film of excellent quality by generating discharge plasma using gaseous raw material including a carbon source under an atmosphere of a relatively high pressure of 100 Torr or higher. A substrateis mounted on at least one of opposing electrodesand. A pulse voltage is applied on the opposing electrodesandunder a pressure of 100 to 1600 Torr in an atmosphere containing gaseous raw material 'A' including a carbon source to generate discharge plasma. A thin filmis thus formed on the substrate. The pulse voltage has a pulse duration of 10 to 1000 nsec.

Thin films and a method for producing the same

A pulse voltage is applied on a process gas to generate discharge plasma. The pulse voltage has a duty ratio controlled in a range of 0.001 percent or more and 8.0 percent or less. Preferably, the discharge plasma has an electron density of 1&#xd7;10cmor larger and an electron temperature of 1.5 eV or lower at a supplied power of 1.0 W/cmor more per a unit area of a discharge electrode.

Method of generating discharge plasma

A pulse power source comprises a first circuit, a second circuit, a transformer for coupling the first circuit and the second circuit, and a switching controller. The second circuit comprises a third semiconductor switch connected in series with a secondary winding of the transformer. The third semiconductor switch is connected in such a direction that a voltage generated in the second circuit is reverse-biased during a period in which the second semiconductor switch is turned on. A gate amplifier for forming a control signal from the switching controller into a pulse and outputting the pulse as a pulse signal is connected between a gate terminal and a cathode terminal of the third semiconductor switch.

High voltage pulse power circuit

There is disclosed a diefor forming a honeycomb structure comprises: a plate-like die substratehaving at least two surfaces, in which back holesfor introducing a green material are formed in one surface, and slitscommunicating with back holesare formed in the other surface; an underlayerdisposed on the substrateso as to coat at least a part of a portion constituting the back holeand the slit; an intermediate layerdisposed so as to coat at least a part of the underlayerand constituted of tungsten carbide particles whose average particle diameter is 5 &#x3bc;m or less and containing WC as a main component; and a surface layerdisposed so as to coat at least a part of the intermediate layerand constituted of diamond and/or diamond-like carbon.

Growing community of inventors

Nagoya, Japan

Takao Saito