Sankyo Company, Limited

Hitachi, Ltd.

Renesas Electronics Corporation

Hitachi Tohbu Semiconductor, Ltd.

Denso Corporation

Takao Okazaki

Seigo Iwado

Mutsuo Nakajima

Tatsuo Haneishi

Akio Torikata

Kazuo Yamakido

Yuko Tamba

Masao Kuroda

Toshiaki Yanai

Yoshio Tsujita

Katsuhiko Kawakubo

Katsuhiro Furukawa

Shuji Takahashi

Kouhei Furuya

Kiyoshi Hamano

Hisaki Kajino

Yukihito Ishihara

Keiji Tanaka

Toshiaki Iwai

Kunio Nakano

Ichiro Somada

Toshiaki Katayama

Norimitsu Nishikawa

Manbu Tohjigamori

Kenta Mochiduki

Takashi Matsumoto

Satoshi Tanaka

Yoichiro Kobayashi

Yukinori Akamine

Mitsuo Yamazaki

Mitsugu Kusunoki

Yasuyuki Kimura

Akira Terahara

Manabu Kawabe

Yusuke Wachi

Mamoru Arai

Ryuzo Enokita

Fumio Nakagawa

Toshinori Ohmine

Masanori Otsuka

Ryuzou Enokita

Atsushi Naito

Akihiro Nagatani

Satoru Fukuchi

Taichi Manome

Yusuke Takada

A power controllable wireless communication device includes a variable gain amplifier having a gain that can be controlled based on a gain control signal, a reference power generation circuit, which generates first reference power and second reference power differing from the first reference power, a sensor circuit supplied with selectively power of a high frequency signal output from the variable gain amplifier, and the first reference power and the second reference power generated by the reference power generation circuit, and a control circuit which generates the gain control signal based on a sensor output from the sensor circuit. When controlling power, the control circuit generates the gain control signal based on ratios among a first sensor output corresponding to the first reference power, a second sensor output corresponding to the second reference power, and a high frequency sensor output corresponding to the power of the high frequency signal.

Power controllable wireless communication device

Provided is an amplifier with a test oscillator for a high frequency characteristic monitor, which has small power loss in a normal operation state and secures good noise performance while it is possible to equip both a transmitter IC and a receiver IC with the amplifier. In a high frequency IC including an amplifier including an inductive load and a test oscillator arranged in a same chip, the test oscillator commonly uses the inductive load of the amplifier, the amplifier has a bias voltage terminal to switch an operation state into an active state/inactive state, and the oscillator has a bias voltage terminal to switch an operation state into an active state/inactive state. In a test operation mode, the amplifier is inactivated and the test oscillator is activated and in a normal operation mode, the amplifier is activated and the test oscillator is inactivated.

High frequency integrated circuit and device using same

A bias circuit includes a first p-n junction element supplied with a current by a first current source connected to a low-voltage side of the first p-n junction element and a base terminal of a second transistor, a second p-n junction element supplied with a current by a second current source, the second current source connected to a low-voltage side of the second p-n junction element and a base terminal of a first transistor, the first and second transistors connected at their emitter terminals to a third current source and receiving base voltages generated by the first and second p-n junction elements, respectively. The second transistor and the first transistor constitute a differential pair in which, at a collector terminal of the second transistor, a current having a temperature coefficient that is substantially twice the temperature coefficient of the current of the second current source is obtained.

Bias circuit

This invention provides a wireless transmitter circuit for mobile communication apparatus and this circuit can be configured with fewer components and is suitable for downsizing. A single PLL synthesizer serves as both RF frequency band PLL and IF frequency band PLL among three oscillators for TX, RX and IF frequency bands, which have been required in conventional mobile communication apparatus. The number of necessary oscillators occupying a large area within a chip is reduced and the number of components is decreased. Specifically, circuitry is arranged to generate local oscillation signals for RF and IF frequency bands by frequency dividing the output of a VCO of the RF frequency band PLL.

Wireless transmitter circuit and transceiver using the same

A total power consumption of a radio communication apparatus is reduced, the radio communication apparatus including a semiconductor integrated circuit (high-frequency IC) which has a clock generation circuit which generates a reference clock signal for use in modulating a transmit signal and demodulating a received signal. The clock generation circuit is provided with a voltage-controlled oscillator circuit (VCXO) which oscillates, when a quartz oscillator is connected thereto, at a frequency dependent on a natural frequency of the quartz oscillator and a control voltage applied thereto. The voltage-controlled oscillator circuit is configured such that a result obtained by converting, in an internal D/A converter circuit, digital frequency control information supplied from the baseband circuit is applied as the control voltage to the voltage-controlled oscillator circuit and such that the voltage-controlled oscillator circuit oscillates at a frequency corresponding to the control voltage.

Semiconductor integrated circuit and radio communication apparatus for communication

In a semiconductor integrated circuit having a plurality of electronic circuits each provided with interfaces used for effecting signal transmission, and supplied with operating voltages from a plurality of independent power supply terminals, protective elements each having high threshold voltages at which the elements are off in the ordinary state of power supply are provided, and a resistor and a diode both for preventing electrostatic breakdown are connected to the gate of an input MOSFET of the interface for carrying out signal transmission between the electronic circuits. Even when a high voltage due to static electricity is applied to each power supply terminal while the semiconductor integrated circuit is handled, electrostatic breakdown of the interface can be prevented by the protective element or the electrostatic breakdown preventive circuit comprising a resistor and a diode.

Semiconductor integrated circuit

The number of current sources and switches necessary for a plurality of unit D/A converters using equal reference currents, are drastically reduced to reduce the parasitic capacitance coupled to current output lines, by converting a plurality of digital signals of a predetermined bit, which are divided from an input digital signal, into an analog current unit D/A converters and by converting the analog current in a manner to correspond to the weights of the corresponding input digital signals, thereby to synthesize the currents. The fixed reference digital signal is inputted to the D/A converter for cancelling offsets. The offsets of a plurality of analog output signals in positive and opposite phases obtained by branching the output of the D/A converter are individually detected. After this, the DC offset values of the individual analog outputs are used as offset adjusted negative feedback signals for a desired value. One of them is the digital signal to be fed back to the input portion of the D/A converter whereas the other is the analog signal to be fed to a path portion obtained by branching the output of the D/A converter.

Converter, offset adjustor, and portable communication terminal unit

A constant current is produced by a first MOSFET of depletion type whose source and gate are interconnected and then is passed through a current mirror circuit made up of MOSFETs of the opposite conduction type with respect to the first MOSFET and to a second MOSFET which has the same conduction type as the first MOSFET and whose gate and drain are interconnected. The voltage between the gate and the source of the second MOSFET is taken as an output constant voltage, which is temperature-compensated by the current ratio of the current mirror circuit.

Reference voltage generating circuit

A demodulation circuit comprises: a phase detection circuit for determining an absolute value of a phase difference between an input signal to be demodulated and a reference signal; a binary phase detection circuit for converting a phase lead or lag between the input signal and the reference signal into a sign of phase difference; and a phase demodulation circuit for calculating, from the absolute value and the sign of phase difference, a phase difference quantity between the input signal and the reference signal and for performing a delay detection on the phase difference quantity; wherein the binary phase detection circuit includes a delay circuit which generates a delay time corresponding to the operation delay of the phase detection circuit; and wherein the phase detection circuit includes a level limiter circuit to limit an internal signal voltage and a reference voltage adjust circuit to correct deviations in the internal signal voltage.

Phase demodulator receiving inputs from phase detector and binary phase

Derivatives of ML-236B carboxylic acid, its salts and esters and corresponding lactone have a hydroxy group at the 3'-position and optionally also at the 6'-position. These derivatives may be prepared by the enzymatic hydroxylation of a corresponding ML-236B compound employing an enzyme produced by a microorganism of the genus Streptomyces or Amycolata, especially Streptomyces sp. SANK 62285, Streptomyces sp. SANK 62385, Streptomyces sp. SANK 62485, Streptomyces sp. SANK 62585, Amycolata autotrophica SANK 62781. Amycolata autotrophica subsp. canberrica SANK 62882 or Amycolata autotrophica subsp. amethystina SANK 62981. These derivatives have the ability to inhibit cholesterol biosynthesis.

Hydroxy-ML-236B derivatives, their preparation and use

An over-sampling analog-to-digital converter using a current switching circuit 102 as a local digital-to-analog converter, wherein a difference between the output currents Isig and Iq of a voltage-to-current converter circuit 101 and a current switching circuit is integrated by a capacitor 105 of which the one end is grounded to a dc potential VB. Further, the current switching circuit 102 has many bits to decrease the difference current between the signal current Isig and the feedback current signal Iq. Moreover, the level-shifting function of the voltage-to-current converter circuit 101 makes it possible to apparently subtract the dc component from the input analog signal Vsig which is produced based on an internally generated dc voltage as a dc bias voltage, and to decrease a change in the voltage between the electrodes of a capacitor caused by the integration of current.

Over-sampling analog-to-digital converter using a current switching

Compounds with acaricidal, insecticidal and anthelmintic activities have the formula: ##STR1## wherein: --X--Y-- is selected from the group consisting of --CH.sub.2 --CH.sub.2 --, --CH.sub.2 --CHOH--, --CH.dbd.CH--, and --CH.sub.2 --C(.dbd.O)--;

Macrolide compounds, their preparation and their use

In an A/D convertor, one comparator is provided for the most significant bit of the output digital signal, two for the second bit, and three each for the third and lower-order bits. When a compare operation is being performed by one of the three comparators that are provided for each of the third and lower bits, the remaining two comparators provide outputs in response to which output switch circuits perform setting of two reference voltages that are specified by the comparison result of a comparator corresponding to an output digital signal two bits higher.

A/D convertor of the pipeline type having additional comparators for use

Derivatives of ML-236B carboxylic acid, its salts and esters and corresponding lactone have a hydroxy group at the 3'-position and optionally also at the 6'-position. These derivatives may be prepared by the enzymatic hydroxylation of a corresponding ML-236B compound employing an enzyme produced by a microorganism of the genus Streptomyces or Amycolata, especially Streptomyces sp. SANK 62285, Streptomyces sp. SANK 62385, Streptomyces sp. SANK 62485, Streptomyces sp. SANK 62585, Amycolata autotrophica SANK 62781, Amycolata autotrophica subsp. canberrica SANK 62882 or Amycolata autotrophica subsp. amethystina SANK 62981. These derivatives have the ability to inhibit cholesterol biosynthesis.

Hydroxyl-ML-236B derivatives, their preparation and use

A new compound, named Substance No. 51262, may be produced by cultivating a suitable microorganism of the genus Streptomyces, especially the new strain SANK 63584 (FERM BP-958). Said compound has herbicidal and growth retardant properties. Said compound has the following structural formula: ##STR1##

Process for the production of an imidazoledione compound by a strain of

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Tokyo, Japan

Takao Okazaki