Fujitsu Semiconductor Limited

Fujitsu Corporation

Takao Ohno

Eiji Yoshida

Masataka Mizukoshi

Akira Takashima

Takao Nishimura

Susumu Moriya

Izumi Kobayashi

Mitsuhisa Watanabe

Yoshito Akutagawa

Koji Sawahata

Hirohisa Matsuki

Eiji Watanabe

Naoyuki Watanabe

Yuzo Shimobeppu

Koki Otake

Motoshu Miyajima

Keisuke Fukuda

Hiroyuki Matsui

Hiroshi Misawa

Koichi Meguro

Akiyo Mizutani

Shigeru Kamada

A semiconductor device is provided that forms a three-dimensional semiconductor device having semiconductor devices stacked on one another. In this semiconductor device, a hole is formed in a silicon semiconductor substrate that has an integrated circuit unit and an electrode pad formed on a principal surface on the outer side. The hole is formed by etching, with the electrode pad serving as an etching stopper layer. An embedded electrode is formed in the hole. This embedded electrode serves to electrically lead the electrode pad to the principal surface on the bottom side of the silicon semiconductor substrate.

Semiconductor device suitable for a stacked structure

An imaging device includes an image sensing device provided on a semiconductor substrate; a transparent member provided on a light-receiving area of the image sensing device; and a circuit element provided on the transparent member, wherein the image sensing device and the circuit element are electrically coupled to each other.

Imaging device

A solid-state imaging device includes: a solid-state imaging element having a light-receiving area; a transparent member disposed so as to oppose the light-receiving area; a supporting member configured to support the transparent member; a first mark disposed at either an upper surface of the transparent member or an upper surface of the supporting member; and a second mark disposed at an outer side of the light-receiving area, at an upper surface of the solid-state imaging element.

Solid-state imaging device and method of fabricating solid-state imaging device

A semiconductor device includes a semiconductor element having a plurality of electrodes provided on one principal surface thereof and a wiring substrate having a conductive layer on an insulating substrate. The wiring substrate is arranged in a substantially U-shape along an outer edge of the semiconductor element. An end of the conductive layer of the wiring substrate is connected to the electrodes of the semiconductor element. The other end of the conductive layer extends in a direction opposite to the semiconductor element on the other principal surface side of the semiconductor element.

Semiconductor device and stacked semiconductor device that can increase flexibility in designing a stacked semiconductor device

There is provided a chamber open to the outside through openings through which a solder-adhered object is passed and the chamber having a heating/melting area, a carrying mechanism for carrying the solder-adhered object into the heating/melting area, a formic-acid supplying means for supplying a formic acid into the heating/melting area, an exhausting means for exhausting a gas from the heating/melting area and its neighboring area to create a lower pressure area in the heating/melting area as compared to the pressure of outside the chamber, heating means for heating directly or indirectly the solder-adhered object in the heating/melting area, and an air-stream suppressing means for disturbing a gas flow between the heating/melting area and the carrying areas. Accordingly, there can be provided a solder jointing system for jointing solder layers of a semiconductor device, an electronic device, or the like to the wirings or the pads, which is capable of having a high processing ability and preventing re-oxidation.

Solder jointing system, solder jointing method, semiconductor device manufacturing method, and semiconductor device manufacturing system

A semiconductor device is manufactured by an integrated circuit forming process, and a series of subsequent steps. In the series of steps, a protection tape is adhered onto a first surface of a semiconductor substrate on which a plurality of semiconductor elements are formed, and the second surface of the semiconductor substrate is ground so that the semiconductor substrate has a desired thickness, the semiconductor substrate is then conveyed while controlling the temperature of the semiconductor substrate. The semiconductor substrate is then separated into a plurality of semiconductor elements. The occurrence of warping on the semiconductor substrate during conveyance of the semiconductor substrate is thus prevented.

Method of manufacturing semiconductor device using heated conveyance member

Growing community of inventors

Kawasaki, Japan

Takao Ohno