Sumitomo Electric Industries, Limited

Nippon Telegraph and Telephone Corporation

Canon Kabushiki Kaisha

Riken Corporation

Oki Electric Industry Co., Ltd.

Sony Corporation

Fujitsu Corporation

Other

University System of Maryland

Altia Hashimoto Co., Ltd.

Takao Nakamura

Michitomo Iiyama

Hiroshi Inada

Masaki Ueno

Katsushi Akita

Takashi Kyono

Yusuke Yoshizumi

Yohei Enya

Takamichi Sumitomo

Koji Katayama

Takatoshi Ikegami

Hiroshi Ogawa

Masahiro Adachi

Atsuki Tomioka

Shinji Tokuyama

Youichi Takashima

Hiromi Nakanishi

Youichi Nagai

Koji Uematsu

Makoto Kiyama

Hideki Hirayama

Susumu Yamamoto

Atushi Katayama

So Tanaka

Takashi Sakurada

Susumu Yoshimoto

Koshi Ando

Ayako Ikeda

Hideaki Nakahata

Seiji Nakahata

Hideki Matsubara

Hideyuki Ijiri

Ryo Kitahara

Kuniaki Ishihara

Eiichi Nishimura

Tetsuya Kumano

Hisaki Ishida

Tomoki Abe

Takashi Miyatake

Hisato Miyachi

Masashi Yamamuro

Hiroshi Fujii

Hiroyuki Saito

Haruyuki Yanagi

Hiroyuki Tanaka

Hiroshi Sakai

Hiroshi Nakajima

Hiroki Mori

Takashi Matsuura

Seiji Takahashi

Tatsushi Hamaguchi

Hiroyuki Kinoshita

Kenji Kawazoe

Katsunori Yanashima

Yasuhiro Iida

Shimpei Takagi

Keisei Hakamata

Norihiro Nakamura

Hideki Sakamoto

Koya Mori

Toshio Ueda

Eiji Komoto

Yuji Furushima

Masayuki Hanadate

Takumi Iwai

Hiroyuki Yamashita

Haruo Obana

Alp T Findikoglu

Yukio Koike

Yoshinari Oshio

Ryutaro Kawamura

Naohiro Hirota

Ichirou Ono

Takeshi Miki

Hideshi Numata

Yoichi Takashima

Michitoma Iiyama

Mitchimoto Iiyama

Shigekuni Kondo

Seigo Sawada

Tsuneyuki Takai

Hirotaka Nishida

The present invention includes a memory and a processor configured to store, in a storage, a first digital twin in which at least one model defining at least one function of an entity at a given time, and at least one piece of second data that includes, as a constituent element, first data for realizing the function of the entity due to being input to the model are included, create at least one second digital twin by performing predetermined first computation using, as a computation target, at least one first digital twin stored in the storage, and execute computation for arranging the second digital twin in a sandbox for which a predetermined time axis has been set, and realizing a function of an entity indicated by the second digital twin in the sandbox in accordance with the time axis.

Digital twin computing apparatus, digital twin computing method, program and data structure

Laser pointer

An optical moduleaccording to an embodiment includes a plurality of laser diodes (LDs)to, a multiplexing optical systemcombining a plurality of laser beams from the respective plurality of LDs, and a packageaccommodating the plurality of LDs and the multiplexing optical system. The package includes a support mounted with the multiplexing optical system, and a cap having a transmissive window that allows a resultant light beam to pass through. At least one of the LDs has an oscillation wavelength of nor more than 550 nm. The package has an internal moisture content of not more than 3000 ppm. The multiplexing optical system is fixed to the support by a resin curing adhesive.

Optical module and method for manufacturing the optical module

An optical moduleaccording to an embodiment includes a plurality of laser diodes (LDs)to, a multiplexing optical systemcombining a plurality of laser beams from the respective plurality of LDs, and a packageaccommodating the plurality of LDs and the multiplexing optical system. The package includes a support mounted with the plurality of LDs and the multiplexing optical system, and a cap having a transmissive window that allows a resultant light beam to pass through. At least one of the LDs has an oscillation wavelength of nor more thannm. The package has an internal moisture content of not more thanppm. The multiplexing optical system is fixed to the support by a resin curing adhesive.

Light source module

A Group III nitride semiconductor device comprises: a Group III nitride semiconductor layer having a primary surface, inclined with respect to a c-plane of the Group III nitride semiconductor at an angle in a range of 50 degrees or more and 80 degrees or less, of a Group III nitride semiconductor; a p-type Group III nitride semiconductor laminate including first to third p-type Group III nitride semiconductor layers, the first to third p-type Group III nitride semiconductor layers being provided on the primary surface of the Group III nitride semiconductor layer, the first and third p-type Group III nitride semiconductor layers sandwiching the second p-type Group III nitride semiconductor layer such that the second p-type Group III nitride semiconductor layer incorporates strain; and an electrode provided on the p-type Group III nitride semiconductor laminate. The electrode is in contact with the first p-type Group III nitride semiconductor layer.

Group III nitride semiconductor device, p-type contact structure, and method for fabricating group III nitride semiconductor device

A conveying apparatus has a sheet conveying path, a first pair of rollers, which is positioned in the conveying path and which has a drive roller and a pinch roller and conveys the sheet, a second pair of rollers, which is positioned downstream relative to the first pair of rollers in the conveying direction and conveys the sheet conveyed by the first pair of rollers, and a mechanism which reduces the force for sandwiching the sheet by the drive roller and the pinch roller of the first pair of rollers or which moves both away from each other. After the sheet is conveyed by the first pair of rollers while the leading edge of the sheet is being stopped by the second pair of rollers, the second pair of rollers starts conveying the sheet, and the mechanism is actuated thereafter.

Conveying apparatus and recording apparatus with movable drive roller and movable pinch roller

This invention includes an input operation unit which accepts the operation of selecting a first or a second printing medium and outputs information indicating the selected printing medium, a conveyance path, a conveyance mechanism which conveys the selected printing medium in the conveyance direction, and a control unit. The conveyance mechanism includes a main roller, a driven roller which presses the main roller through the selected printing medium, a rotation member having a cam shape, and an elastic member which deforms to change a pressing force in accordance with the rotational position of the rotation member. The control unit rotates the rotation member to the first rotational position when the first printing medium is selected, and rotates the rotation member to the second rotational position where the pressing force becomes smaller than that at the first rotational position when the second printing medium is selected.

Conveyance controller, printing apparatus, method of conveying printing medium, and printing medium conveyance apparatus

Provided is a III-nitride semiconductor laser diode which is capable of lasing at a low threshold. A support base has a semipolar or nonpolar primary surface. The c-axis Cx of a III-nitride is inclined relative to the primary surface. An n-type cladding region and a p-type cladding region are provided above the primary surface of the support base. A core semiconductor region is provided between the n-type cladding region and the p-type cladding region. The core semiconductor region includes a first optical guide layer, an active layer, and a second optical guide layer. The active layer is provided between the first optical guide layer and the second optical guide layer. The thickness of the core semiconductor region is not less than 0.5 &#x3bc;m. This structure allows the confinement of light into the core semiconductor region without leakage of light into the support base, and therefore enables reduction in threshold current.

III-nitride semiconductor laser diode

A group-III nitride semiconductor laser device comprises: a laser structure including a semiconductor region and a support base having a semipolar primary surface of group-III nitride semiconductor; a first reflective layer, provided on a first facet of the region, for a lasing cavity of the laser device; and a second reflective layer, provided on a second facet of the region, for the lasing cavity. The laser structure includes a laser waveguide extending along the semipolar surface. A c+ axis vector indicating a &#x3c;0001&#x3e; axial direction of the base tilts toward an m-axis of the group-III nitride semiconductor at an angle of not less than 63 degrees and less than 80 degrees with respect to a vector indicating a direction of an axis normal to the semipolar surface. The first reflective layer has a reflectance of less than 60% in a wavelength range of 525 to 545 nm.

Group-III nitride semiconductor laser device

A method of forming a p-type gallium nitride based semiconductor without activation annealing is provided, and the method can provide a gallium nitride based semiconductor doped with a p-type dopant. A GaN semiconductor regioncontaining a p-type dopant is formed on a supporting basein a reactor. An organometallic source and ammonia are supplied to the reactorto grow the GaN semiconductor layeron a GaN semiconductor layer. The GaN semiconductor is doped with a p-type dopant. Examples of the p-type dopant include magnesium. After the GaN semiconductor regionsandare grown, an atmospherecontaining at least one of monomethylamine and monoethylamine is prepared in the reactor. After the atmosphereis prepared, a substrate temperature is decreased from the growth temperature of the GaN semiconductor region. When the substrate temperature is lowered to room temperature after this film formation, a p-type GaN semiconductorand an epitaxial wafer E has been fabricated.

Method of forming p-type gallium nitride based semiconductor, method of forming nitride semiconductor device, and method of forming epitaxial wafer

Provided is a group-III nitride semiconductor laser device with a laser cavity of high lasing yield, on a semipolar surface of a support base in which the c-axis of a hexagonal group-III nitride is tilted toward the m-axis. First and second fractured faces to form the laser cavity intersect with an m-n plane. The group-III nitride semiconductor laser device has a laser waveguide extending in a direction of an intersecting line between the m-n plane and the semipolar surface. In a laser structure, a first surface is opposite to a second surface. The first and second fractured faces extend from an edge of the first surface to an edge of the second surface. The fractured faces are not formed by dry etching and are different from conventionally-employed cleaved facets such as c-planes, m-planes, or a-planes.

Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device

Provided is a group-III nitride semiconductor laser device with a laser cavity allowing for a low threshold current, on a semipolar surface of a support base in which the c-axis of a hexagonal group-III nitride is tilted toward the m-axis. First and second fractured facesto form the laser cavity intersect with an m-n plane. The group-III nitride semiconductor laser devicehas a laser waveguide extending in a direction of an intersecting line between the m-n plane and the semipolar surface. For this reason, it is feasible to make use of emission by a band transition enabling the low threshold current. In a laser structure, a first surfaceis opposite to a second surface. The first and second fractured facesextend from an edgeof the first surfaceto an edgeof the second surface. The fractured faces are not formed by dry etching and are different from conventionally-employed cleaved facets such as c-planes, m-planes, or a-planes.

Growing community of inventors

Itami, Japan

Takao Nakamura