Murata Manufacturing Co., Ltd.

Takao Mukai

Michio Kadota

Hideya Horiuchi

Masaru Yata

Yasuhiro Kuratani

Tomoyasu Miyata

Hideharu Yoshikawa

Yasuhisa Fujii

Seiji Kai

Junya Ago

Hisashi Yamazaki

Mitsuyoshi Hira

Mamoru Ikeura

Daisuke Ajima

Shintaro Nakatani

A filter device includes a first filter including series resonators and parallel resonators, a first inductor connected in parallel between a first terminal and the first filter, a second inductor provided in series between the first filter and a second terminal, and a third inductor provided in series in a channel connecting the parallel resonator and ground, the third inductor is incorporated in a multilayer substrate, the first filter is mounted on a main surface of the multilayer substrate and incorporated in a filter chip, and the first inductor and the second inductor are chip inductors including coil conductors and are mounted on the main surface of the multilayer substrate beside the filter chip so as to be adjacent to each other and such that coil axes thereof are orthogonal or substantially orthogonal to each other.

Filter device and multiplexer

An extractor includes a band pass filter and a band elimination filter. One filter of the band pass filter and the band elimination filter includes at least one serial arm resonator and at least one parallel arm resonator that are each defined by an acoustic wave resonator. Any one of the at least one serial arm resonator and the at least one parallel arm resonator includes, among a divided resonator group divided resonator including a plurality of divided resonators coupled in series to each other, a first divided resonator group that is a largest in number of the divided resonators coupled in series and a smallest in capacitance.

Extractor

A multiplexer includes a filter arranged in a first path, a filter arranged in a second path, and a filter arranged in a third path, in which a frequency of intermodulation distortion (IMD) generated from a transmission signal in a pass band of the filter and a transmission signal in a pass band of the filter is included in a pass band of the filter. The filters includes one or more series arm resonant circuits arranged on the first path and one or more parallel arm resonant circuits arranged in a path connecting corresponding nodes on the first path and the ground, in which at least one resonant circuit among the resonant circuits closest to a common terminal in one or more series arm resonant circuits and one or more parallel arm resonant circuits is defined by a divided resonator group defined by multiple divided resonators connected in series.

Multiplexer

A branching device that separates signals of different pass bands increases attenuation characteristics outside the pass bands, and increases isolation characteristics. The branching device includes a duplexer including a transmission filter and a reception filter electrically connected to an antenna terminal, and a filter electrically connected to the antenna terminal. An inductor is electrically connected between the antenna terminal and a ground potential. The transmission filter is a ladder filter including serial arm resonators and parallel arm resonators, and each includes a polarized inductor electrically connected between the parallel arm resonators and a ground potential. The inductor and the polarized inductors inductively couple with each other, and a distance between the inductor and the polarized inductors is shorter than a distance between the polarized inductors.

Branching device

An electronic component includes a frame-shaped supporting body including a heat-curable resin and surrounding a functional unit on one main surface of a substrate and so as to be separated from a periphery of the substrate on an inner side and in which a lid member is fixed to the supporting body such that an opening of the frame-shaped supporting body is sealed. The frame-shaped supporting body includes a frame-shaped supporting body main body, a first protrusion that protrudes toward an inside from the supporting body main body and a second protrusion that protrudes toward an outside from the supporting body main body at a portion where the supporting body main body and the first protrusion are continuous with each other.

Electronic component and manufacturing method therefor

A longitudinally-coupled resonator-type acoustic wave device includes first to third IDT electrodes disposed on a piezoelectric material and first and second reflectors disposed in acoustic wave propagation directions. Each of any two IDT electrodes adjacent to each other in the acoustic wave propagation directions, of the first to third IDT electrodes, has a narrower-pitch electrode finger portion at an edge thereof adjacent to the other IDT electrode. Most portions of the first to third IDT electrodes are apodized, and the narrower-pitch electrode finger portions and the electrode finger portions adjacent thereto are normally shaped.

Acoustic wave device having narrower-pitch electrodes, normally-shaped electrodes and apodized electrodes

A longitudinally coupled resonator boundary acoustic wave filter device includes a piezoelectric substrate made of LiNbOhaving a principal plane obtained by rotating the Y-axis through about 15 degrees +&#x2212;10 degrees, a dielectric substrate made of silicon oxide and laminated on the piezoelectric substrate, and an electrode structure arranged at a boundary between the piezoelectric substrate and the dielectric substrate. The electrode structure includes a plurality of IDTs arranged in a direction in which a boundary acoustic wave propagates, and reflectors, wherein where in each of the plurality of IDTs, the overlap width of electrode fingers is W and the interval of electrode fingers is P, W/P is in a range of about 20 to about 45.

Boundary acoustic wave filter

An edge reflection surface acoustic wave filter includes IDTs disposed on a top surface of a piezoelectric substrate, and surface acoustic waves of the Shear Horizontal type are reflected between opposite edges. At least one outermost electrode finger in the direction of propagation of surface acoustic waves on the side of at least one of the edges is removed. Accordingly, desired filter characteristics can readily be achieved without causing variations in filter characteristics, spurious components at frequencies lower than the passband are minimized, and selectivity is greatly improved.

Edge-reflection surface acoustic wave filter

A method of manufacturing an edge reflection type surface acoustic wave device using a Shear Horizontal type surface acoustic wave includes the steps of making a first half cut defining a first end surface portions having a smooth surface, that is, opposing two end surfaces which function as reflection end surfaces, from the upper surface of a piezoelectric substrate after at least one of a plurality of IDTs has been formed on the upper surface of the piezoelectric substrate, making a second half cut for forming second end surface portions having a rough surface after making the first cut, and making a full cut for cutting the piezoelectric substrate so as to reach the lower surface of the piezoelectric substrate outside of the second end surface portions in the surface acoustic wave propagation direction.

Method of manufacturing an edge reflection type surface acoustic wave device

A method of manufacturing an edge reflection type surface acoustic wave device using a Shear Horizontal type surface acoustic wave includes the steps of making a first half cut defining first end surface portions having a smooth surface, that is, opposing two end surfaces which function as reflection end surfaces, from the upper surface of a piezoelectric substrate after at least one of a plurality of IDTs has been formed on the upper surface of the piezoelectric substrate, making a second half cut for forming second end surface portions having a rough surface after making the first cut, and making a full cut for cutting the piezoelectric substrate so as to reach the lower surface of the piezoelectric substrate outside of the second end surface portions in the surface acoustic wave propagation direction.

Edge reflection type surface acoustic wave device and manufacturing method for the same

A surface acoustic wave device includes a piezoelectric substrate having a pair of substrate edges and an upper surface therebetween. The piezoelectric substrate has at least one inner edge which is in contact with a main region and extends from the upper surface toward a bottom surface of the piezoelectric substrate inside one of the substrate edges. An interdigital transducer is provided on the main region of the piezoelectric substrate such that a SH type surface acoustic wave excited by the interdigital transducer and having a wavelength of &lgr; is reflected by the at least one inner edge. A distance L between the at least one inner edge and the corresponding one of the substrate edges is substantially equal to about 8&lgr; or less.

Surface acoustic wave device having an interdigital transducer provided on a main region of a piezoelectric substrate

An edge reflection type surface acoustic wave device utilizes a Shear Horizontal type surface acoustic wave and includes a surface acoustic wave substrate, and at least two interdigital transducers provided on one main surface of the surface acoustic wave substrate. First and second grooves are formed on the opposite ends in the surface acoustic wave propagation direction of the area where the interdigital transducer is provided. The first and second grooves extend from the one main surface of the surface acoustic wave substrate toward the other main surface thereof without reaching the other main surface. The grooves extend substantially perpendicularly to the surface acoustic wave propagation direction so as to define first and second edges for reflecting the surface acoustic wave. The first and second edges are defined by the inner sideively. walls of the first and second grooves, respectively.

Growing community of inventors

Nagaokakyo, Japan

Takao Mukai