Sumitomo Electric Industries, Limited

Takao Maeda

Shunsuke Ban

Shosaku Yamanaka

Masaya Miyake

Keizo Harada

Takatoshi Takikawa

Kouhei Shimoda

Kouichi Sogabe

Hiroshi Yoshino

Masayuki Ishii

Tomohiko Ihara

Masaharu Yasuhara

Kouichi Sogahe

Tsutomu Ooka

A particulate trap for use in a diesel engine can efficiently trap particulates contained in exhaust gas with low pressure drop and can burn collected particulates for regeneration with less power consumption. A filter element having a built-in electric heater is mounted in a case provided in the exhaust line of a diesel engine. The filter has two mutually opposed surfaces between which is mounted the electric heater. With this arrangement, it is possible to increase the filtration area and also the heating efficiency.

Particulate trap

The present invention provides a car exhaust purifying filter member which is high in the capacity to collect solid and liquid contents in exhausts and which has such high heat resistance as to be capable of withstanding heat when burned for cleaning and a method of manufacturing the same. A three-dimensional mesh-like metallic porous member made from Ni--Cr--Al and having a three-dimensional framework is heated at 800-1000 .degree. C. in the atmosphere to form on its surface a densely grown fibrous alumina crystal. This member is used as a filter member. Such a filter member shows excellent collecting capacity and corrosion resistance and can withstand high temperatures. Also, it is possible to firmly carry a catalyst on the fibrous alumina crystal formed on the surface. Because of its increased surface area, it has an increased catalyst carrying capacity.

Filter member for purifying exhaust gas and method for manufacturing the

A process for manufacturing a plastic package type semiconductor device composed of a rolled metal substrate made of copper or copper alloy and an insulating film formed on the surface of the substrate. The film may be a single-layer film made of silicon oxynitride or a composite film formed by laminating a silicon oxide layer and a silicon oxynitride layer (or a silicon nitride layer). A semiconductor element is mounted on the film or on the exposed surface of the substrate. Other passive elements are provided on the film. After connecting these elements with bonding wires, the entire device is sealed in a resin molding. This device is thus free of cracks due to difference in thermal expansion between the film and the substrate, or peeling due to moisture absorption.

Process for manufacturing a semiconductor substrate comprising laminated

A plastic package type semiconductor device is composed of a rolled metal substrate made of copper or copper alloy and an insulating film formed on the surface of the substrate. The film may be a single-layer film made of silicon oxynitride or a composite film formed by laminating a silicon oxide layer and a silicon oxynitride layer (or a silicon nitride layer). A semiconductor element is mounted on the film or on the exposed surface of the substrate. Other passive elements are provided on the film. After connecting these elements with bonding wires, the entire device is sealed in a resin molding. This device is thus free of cracks due to difference in thermal expansion between the film and the substrate, or peeling due to moisture absorption.

Plastic package type semiconductor device having a rolled metal substrate

Wiring board having laminated wiring patterns

A heat conductive aluminum nitride sintered body contains 100 parts by weight of aluminum nitride, at least 0.005 parts by weight and not more than 0.5 parts by weight of carbon, at least 0.01 parts by weight and not more than 15 parts by weight of a rare earth aluminum oxide in terms of the simple substance of a rare earth element, and at least 0.01 parts by weight and not more than 15 parts by weight of at least one element selected from a group of compounds containing elements belonging to the groups IVB, VB and VIB of the periodic table in terms of the simple substance of the element. Such a sintered body has a heat conductivity of at least 100 W/m.multidot.K. and not more than 270 W/m.multidot.K. at room temperature.

Heat conductive colored aluminum nitride sintered body

A heat conductive aluminum nitride sintered body contains 100 parts by weight of aluminum nitride, at least 0.005 parts by weight and not more than 0.5 parts by weight of carbon, at least 0.01 parts by weight and not more than 15 parts by weight of a rare earth aluminum oxide in terms of the simple substance of a rare earth element, and at least 0.01 parts by weight and not more than 15 parts by weight of at least one element selected from a group of compounds containing elements belonging to the groups IVB, VB and VIB of the periodic table in terms of the simple substance of the element. Heat conductivity of the aluminum nitride sintered body is at least 100 W/m.multidot.K and not more than 270 W/m.multidot.K at the ordinary temperature. According to a method of preparing such an aluminum nitride sintered body, at least 0.01 parts by weight and not more than 5 parts by weight of carbon, at least 0.01 parts by weight and not more than 15 parts by weight of an oxide of a rare earth element, and at least 0.01 parts by weight and not more than 15 parts by weight of an oxide, a carbide or a nitride of an element belonging to the group IVB, VB or VIB of the periodic table are added to 100 parts by weight of aluminum nitride. A compact of this mixture is fired in a nonoxidizing atmosphere under a temperature of at least 1500.degree. C. and not more than 2100.degree. C.

Heat conductive colored aluminum nitride sintered body and method of

An AlN sintered body which has a color within the range of gray to black and a thermal conductivity within the range of 100 to 270 W/m.multidot.K at room temperature. Such a body is useful as an electronic material and a method of preparing the same. The AlN sintered body contains 100 parts by weight of AlN, 0.005 to 0.5 parts by weight of carbon, not more than 1 part by weight of a boron compound in terms of the simple substance of boron, 0.01 to 15 parts by weight of a rare earth aluminum oxide in terms of the simple substance of the rare earth element, and 0.01 to 15 parts by weight of a compound containing an element belonging to the group IVB of the periodic table in terms of the simple substance of the element. This AlN sintered body is obtained by shaping a mixture of the above components into a prescribed configuration and thereafter firing the as-formed compact in a non-oxidizing atmosphere containing at least 10 percent by volume of nitrogen, at a temperature of 1500.degree. to 2100.degree. C.

Growing community of inventors

Itami, Japan

Takao Maeda