Nippon Hoso' Kyokai

Dai Nippon Printing Co., Ltd.

Hitachi, Ltd.

Takao Kuriyama

Hiroshi Murakami

Eiji Munemoto

Norio Ohta

Toshihiro Katoh

Koji Shimada

Tatsuya Takei

Takashi Kawai

Tadaaki Hirai

Yukio Takasaki

Keiichi Shidara

Yasuhiko Nonaka

Kenkichi Tanioka

Eisuke Inoue

The present invention aims to solve problems involved in the formation of a conductive or insulating layer in a pattern form by photolithography, i.e., an environmental problem associated with handling of a solvent and a problem associated with wastewater treatment in the development with an aqueous alkaline solution. A method for forming a conductive layer (an anode bus 3) or an insulating layer (a barrier 1) on a glass substrate by photolithography using a photosensitive slurry solution prepared by mixing a low-melting glass powder as a binder and a conductive or insulating powder into a PVA-based, water-soluble photosensitive solution, wherein the content of B.sub.2 O.sub.3 component in the whole low-melting glass powder is closely regulated to not more than 6% by weight. This enables coating without gelation of PVA. Unlike the conventional photolithography using a solvent type photosensitive slurry, the method of the present invention can solve the environmental problem associated with handling a solvent and the problem associated with wastewater treatment in the development with an aqueous alkaline solution.

Display substrate, conductor, and insulator

The present invention aims to solve problems involved in the formation of a conductive or insulating layer in a pattern form by photolithography, i.e., an environmental problem associated with handling a solvent and a problem associated with wastewater treatment in the development with an aqueous alkaline solution. A method for forming a conductive layer (an anode bus 3) or an insulating layer (a barrier 1) on a glass substrate by photolithography using a photosensitive slurry solution prepared by mixing a low-melting glass powder as a binder and a conductive or insulating powder into a PVA-based, water-soluble photosensitive solution, wherein the content of B.sub.2 O.sub.3 component in the whole low-melting glass powder is closely regulated to not more than 6% by weight. This enables coating without gelation of PVA. Unlike the conventional photolithography using a solvent type photosensitive slurry, the method of the present invention can solve the environmental problem associated with handling a solvent and the problem associated with wastewater treatment in the development with an aqueous alkaline solution.

Photosensitive slurry

Method for forming conductive or insulating layers

A structure of a photoconductive film related to a target of an image pickup tube of the photo conductivity type is disclosed. This photoconductive film is formed from mainly Se and Te is added in a central part thereof. Further, As, which is considered to form a deep trap level which captures electrons in Se and GaF.sub.3, etc. which form negative space charges by capturing electrons in Se are added in the region adjacent to the region where Te exists. In addition, a thickness of film in the region where GaF.sub.3, etc. exists is selected to be thinner (not smaller than 20 .ANG. and not larger than 90 .ANG.) than a value which has been adopted so far.

Doped photoconductive film including selenium and tellurium

Growing community of inventors

Tokyo-To, Japan

Takao Kuriyama