Shin-etsu Chemical Co., Ltd.

Nippon Hoso' Kyokai

Other

Takao Kuki

Toshihiko Ryuo

Masayuki Tanno

Masanori Ikari

Toshihiro Nomoto

A magnetostatic wave device includes a Gd,Ga,O,substrate off-angled from a &lcub;110&rcub; plane. A magnetic thin film including a crystal of garnet is formed on the Gd,Ga,O,substrate by liquid-phase epitaxy. A transducer operates for exciting magnetostatic wave in the magnetic thin film in response to an RF electric signal. A bias magnetic field is applied to the magnetic thin film. There is a relation as 20&deg;&lE;&verbar;&thgr;,&plus;&thgr;,&verbar;&lE;35&deg;, where &ldquo;&thgr;,&rdquo; denotes an angle between a longitudinal direction of the transducer and a <001> orientation of the crystal in the magnetic thin film, and &ldquo;&thgr;,&rdquo; denotes an angle between a transverse direction of the transducer and a specified direction. The specified direction is parallel to a line of intersection between a horizontal plane of the magnetic thin film and a given plane which is perpendicular to the horizontal plane of the magnetic thin film and which contains a direction of the bias magnetic field. Also, there is a relation as &verbar;&thgr;,&verbar;&lE;75&deg;, where &ldquo;&thgr;,&rdquo; denotes an angle between the specified direction and the direction of the bias magnetic field.

Magnetostatic wave device with specified angles relating the transducer, magnetic thin film, and bias magnetic field

A magnetostatic wave device includes a Gd.sub.3 Ga.sub.5 O.sub.12 substrate off-angled from a {110} plane. A magnetic thin film including a crystal of garnet is formed on the Gd.sub.3 Ga.sub.5 O.sub.12 substrate by liquid-phase epitaxy. A transducer is operative for exciting magnetostatic wave in the magnetic thin film in response to an RF electric signal. A bias magnetic field is applied to the magnetic thin film. There is a relation as 20.degree..ltoreq..vertline..theta..sub.1 +.theta..sub.2 .vertline..ltoreq.35.degree., where '.theta..sub.1 ' denotes an angle between a longitudinal direction of the transducer and a &lt;001&gt; orientation of the crystal in the magnetic thin film, and '.theta..sub.2 ' denotes an angle between a direction of the bias magnetic field and a transverse direction of the transducer which is perpendicular to the longitudinal direction thereof.

Magnetostatic wave device

A reflection-type S/N enhancer includes a Gd.sub.3 Ga.sub.5 O.sub.12 substrate off-angled from a {110} plane. A magnetic thin film including a crystal of garnet is formed on the Gd.sub.3 Ga.sub.5 O.sub.12 substrate by liquid-phase epitaxy. The magnetic thin film has a saturation magnetization in a range of 500 G to 1,100 G. A transducer is operative for exciting magnetostatic wave in the magnetic thin film in response to an RF electric signal. A bias magnetic field is applied to the magnetic thin film. There is a relation as .vertline..theta..sub.1 +.theta..sub.2 .vertline.&lt;45.degree., where '.theta..sub.1 ' denotes an angle between a longitudinal direction of the transducer and a &lt;001&gt; orientation of the crystal in the magnetic thin film, and '.theta..sub.2 ' denotes an angle between a direction of the bias magnetic field and a transverse direction of the transducer in a horizontal plane. The transverse direction of the transducer is perpendicular to the longitudinal direction thereof.

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Tokyo, Japan

Takao Kuki