Renesas Electronics Corporation

Takao Kihara

Taizo Yamawaki

Takahiro Nakamura

Masakazu Mizokami

Tomohiro Sano

Takayasu Norimatsu

In an RFIC provided in a semiconductor device according to an embodiment, a low-noise amplifier () for reception and a power amplifier () for transmission are connected to a common antenna connection terminal (). Between the antenna connection terminal () and an LNA (), a circuit () is connected to be used for impedance matching, and a semiconductor switch (SW) is connected in parallel with the circuit ().

Semiconductor device

A semiconductor device includes a plurality of first inductors having a spiral shape and provided in a modulator of a transmitting side, and a plurality of second inductors having a horseshoe shape and provided in an oscillator of a receiving side, the plurality of second inductors being arranged such that an opening of plurality of second inductors is disposed opposite to the plurality of first inductors. The semiconductor device performs a transmission process and a reception process using a radio wave.

Semiconductor device including spiral shape inductor and horseshoe shape inductor

A wireless transceiver includes a semiconductor device configured to perform a transmission process and a reception process using a radio wave, the semiconductor device including a transmission unit and a reception unit. The wireless transceiver further includes an antenna configured to transmit an output signal from the transmission unit and provide a received input signal to the reception unit, and a baseband circuit configured to receive an output signal from the reception unit and output the output signal to the transmission unit.

Semiconductor device including spiral-shape inductor and horseshoe-shape inductor

A semiconductor device is configured to perform a transmission process and a reception process using a radio wave, includes a transmission unit configured to perform the transmission process, and includes a modulator having a first inductor of a spiral shape, and a reception unit configured to perform the reception process, which includes a local oscillator having a second inductor. The second inductor includes a first portion extending in a first direction, a second portion extending in a second direction and a third portion extending in a third direction. The second direction and the third direction intersect with the first direction. The first portion, second portion and third portion include a same conductor layer. The second portion has an end which is not connected with the first portion. The third portion has another end which is not connected with the first portion, and the end of the second portion and said another end of the third portion are located apart in a plan view.

Semiconductor device including first inductor of a spiral shape and a second inductor having an opening which is opposite the first inductor

A semiconductor device includes a filter circuit operable to pass a desired signal component of a high-frequency signal inputted and operable to attenuate a harmonic component of an integral multiple of the desired signal, wherein the filter circuit includes a first inductor and a second inductor coupled in series to a signal line transmitting the high-frequency signal, a first variable capacitor coupled between a power supply line and a node of the first inductor and the second inductor, and a second variable capacitor coupled between the signal line and the power supply line.

Semiconductor device and adjustment method of filter circuit

A semiconductor device includes a low noise amplifier configured to amplify a radio signal from an antenna and output an reception signal, a down converter configured to down-convert the reception signal, a first divider coupled with the down converter, a first local oscillator coupled with the first divider, a modulator configured to modulate a transmission signal, a second divider coupled with the modulator, and a second local oscillator coupled with the second divider. The modulator includes a first inductor of a spiral shape, the local oscillator includes a second inductor of a horse-shape having an opening, and the opening of the second inductor is disposed opposite to the first inductor.

Semiconductor device having horseshoe and spiral shape inductors

A semiconductor device includes: a spiral-shaped inductor formed to include a metal wire; and a horseshoe-shaped inductor formed to include the metal wire. The horseshoe-shaped inductor is arranged such that an opening of the horseshoe-shaped inductor is disposed opposite to the spiral-shaped inductor. Accordingly, unnecessary wave (spurious) output from a transmitting unit can be reduced as small as possible.

A quadrature modulator has first to fourth transistors, a first node, a second node, and a first output node. A non-inversion in-phase analog signal, an inversion in-phase analog signal, a non-inversion quadrature analog signal, and an inversion quadrature analog signal are supplied to input electrodes of the first to fourth transistors, respectively. Control electrodes of the first to fourth transistors respond to a non-inversion in-phase RF signal, an inversion in-phase RF signal, a non-inversion quadrature RF signal, and an inversion quadrature RF signal, respectively. Output electrodes of the first and second transistors are coupled to the first node, and output electrodes of the third and fourth transistors are coupled to the second node. A first high-pass filter is coupled between the first node and the first output node, and a second high-pass filter is coupled between the second node and the first output node.

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Kawasaki, Japan

Takao Kihara