Other

Oki Electric Industry Co., Ltd.

Tokyo Ohka Kogyo Co., Ltd.

Oki Semiconductor Co., Ltd.

Takao Kanehara

Ichiro Koiwa

Akira Hashimoto

Yoshihiro Sawada

Juro Mita

Yukihisa Okada

Hiroyo Kato

Tetsuya Osaka

Kazuhide Abe

Kinya Ashikaga

Yoko Kajita

A hybrid memory device includes a plurality of regions including a memory cell array region upon which are formed a plurality of memory cells and a logic circuit region upon which is formed a logic circuit device, and is provided with a liner oxide layer formed on a region covering the logic circuit region except the memory cell array region and a cover layer formed on the liner oxide layer while extending to the memory cell array region.

Hybrid memory device

The invention discloses a coating solution for use in forming Bi-based ferroelectric thin films containing Bi, metallic element A (at least one selected from the group consisting of Bi, Pb, Ba, Sr, Ca, Na, K and rare earth elements) and metallic element B (at least one selected from the group consisting of Ti, Nb, Ta, W, Mo, Fe, Co and Cr), wherein it contains metal alkoxides of Bi, metallic element A and metallic element B respectively, and an organometallic compound obtainable by hydrolyzing composite metal alkoxides, formed by any two or more of said metal alkoxides, with water alone or in combination with a catalyst, and contains Bi in a molar amount 1-1.1 times as great as the stoichiometric amount; a ferroelectric thin film ( ), a ferroelectric capacitor ( ) and a ferroelectric memory with the use of such a coating solution; and a method for producing the same.

COATING SOLUTIONS FOR USE IN FORMING BISMUTH-BASED FERROELECTRIC THIN FILMS, AND FERROELECTRIC THIN FILMS, FERROELECTRIC CAPACITORS AND FERROELECTRIC MEMORIES FORMED WITH SAID COATING SOLUTIONS, AS WELL AS PROCESSES FOR PRODUCTION THEREOF

An object of the present invention is to reduce a leakage current of a Pb Zr Ti O base ferroelectric thin film when a voltage is applied. A ferroelectric thin film comprising a composition of PbZr Ti Sb O (where 0 <x<1, 0.0001&lE;y&lE;0.05) is provided herein as well as a method of producing it. The presence of the Sb serves to reduce the leakage current of the film when a voltage is applied.

Ferroelectric thin film, production method thereof and coating liquid for making thin film

A perovskite crystallized ferroelectric substance is formed over a lower electrode. A precursor solution, which serves as a ferroelectric film, is applied thereto and dried, followed by low-temperature anneal under the condition of a perovskite crystallization temperature or lower. Further, an upper electrode is formed and thereafter subjected to high-temperature anneal at a temperature of the perovskite crystallization temperature or higher to thereby perfectly crystallize the ferroelectric film, whereby a semiconductor element interposed between the electrodes can be formed.

Method of manufacturing a ferroelectric film

The invention discloses a coating solution for use in forming Bi-based ferroelectric thin films containing Bi, metallic element A (at least one selected from the group consisting of Bi, Pb, Ba, Sr, Ca, Na, K and rare earth elements) and metallic element B (at least one selected from the group consisting of Ti, Nb, Ta, W, Mo, Fe, Co and Cr), wherein it contains metal alkoxides of Bi, metallic element A and metallic element B respectively, and an organometallic compound obtainable by hydrolyzing composite metal alkoxides, formed by any two or more of said metal alkoxides, with water alone or in combination with a catalyst, and contains Bi in a molar amount 1-1.1 times as great as the stoichiometric amount; a ferroelectric thin film (,), a ferroelectric capacitor (,) and a ferroelectric memory with the use of such a coating solution; and a method for producing the same.

Coating solutions for use in forming bismuth-based ferroelectric thin films, and ferroelectric thin films, ferroelectric capacitors and ferroelectric memories formed with said coating solutions, as well as processes for production thereof

An object of the present invention is to reduce a leakage current of a Pb Zr Ti O base ferroelectric thin film when a voltage is applied. A ferroelectric thin film comprising a composition of PbZr.sub.x Ti.sub.1-x Sb.sub.y O.sub.3 (where 0&lt;x&lt;1, 0.0001.ltoreq.y.ltoreq.0.05) is provided herein as well as a method of producing it. The presence of the Sb serves to reduce the leakage current of the film when a voltage is applied.

Ferroelectric thin film, making method thereof and coating liquid for

Alkoxymetals, .beta.-diketones or metal acetates which are metal compounds corresponding independently to Bi, metallic element A (which is at least one member of the group consisting of Ca, Ba, Sr, Pb and Bi) and metallic element B (which is at least one member of the group consisting of Ti, Nb and Ta) are reacted with alcohols, carboxylic anhydrides, glycols, .beta.-diketones or dicarboxylic acid monoesters to prepare compounds for inclusion in coating solutions for use in forming Bi-based dielectric thin films. The coating solutions are used to produce dielectric thin films or memories.

Growing community of inventors

Tokyo, Japan

Takao Kanehara