Kokusai Electric Corporation

Takao Izaki

Yoshitomo Hashimoto

Kimihiko Nakatani

Motomu Degai

Takashi Nakagawa

Takayuki Waseda

A technique includes: (a) providing a substrate having a first surface and a second surface; (b) modifying the first surface to be terminated with a hydrocarbon group by supplying a hydrocarbon group-containing gas to the substrate; and (c) forming a film on the second surface by supplying a precursor and an oxygen- and hydrogen-containing gas to the substrate after modifying the first surface.

Method of processing substrate and method of manufacturing semiconductor device by forming film

A technique includes: (a) modifying a surface of a first base exposed on a surface of a substrate to be terminated with a hydrocarbon group by supplying a hydrocarbon group-containing gas to the substrate having the first base and a second base exposed on the surface of the substrate; and (b) forming a film on a surface of the second base by supplying an oxygen- and hydrogen-containing gas to the substrate after modifying the surface of the first base.

Growing community of inventors

Toyama-shi, Japan

Takao Izaki