Rohm Co., Ltd.

Takao Fujimori

Yasuo Nakanishi

Hirotaka Obuchi

Nobuaki Matsui

Kazuaki Tsutsumi

Yoshinori Tanaka

Shinichi Kohda

Daisuke Nakagawa

Masahiro Murayama

Hideaki Anzai

Tomohito Kawase

A light emitting device includes a light emitting layer, a substrate that is transparent to an emission wavelength of the light emitting layer and positioned to receive an emission wavelength from the light emitting layer, a convex pattern including a collection of a plurality of convex portions discretely arranged on a front surface of the substrate with a first pitch, an n type nitride semiconductor layer located on the front surface of the substrate to cover the convex pattern and a p type nitride semiconductor layer located on the light emitting layer. The light emitting layer is located on the n type semiconductor layer. Each of the convex portions includes a sub convex pattern comprising a plurality of fine convex portions discretely formed at the top of the convex portion with a second pitch smaller than the first pitch, and a base supporting the sub convex pattern.

Light emitting device and light emitting device package

A semiconductor light emitting element is disclosed. The element includes a substrate including a first surface, a second surface opposite to the first surface, and a side surface that connects the first surface and the second surface; a semiconductor layer formed on the first surface of the substrate and configured to generate light; and a light reflective layer formed on the second surface of the substrate to cover an entire region of the second surface of the substrate and configured to reflect the light generated by the semiconductor layer toward the semiconductor layer. A modified layer, which has a physical property different from that of the other portion of the substrate, is formed on the side surface of the substrate to be spaced apart from the first surface toward the second surface by altering a material forming the substrate.

Semiconductor light emitting element and manufacturing method thereof

A semiconductor light emitting device includes a substrate having a first major surface and a second major surface, a semiconductor layer that includes a first semiconductor layer of a first conductive type formed on the first major surface of the substrate, a light emitting layer formed on the first semiconductor layer and a second semiconductor layer of a second conductive type formed on the light emitting layer, and a mesa structure formed in the semiconductor layer by selectively notching the first semiconductor layer, the light emitting layer and the second semiconductor layer so as to expose the first semiconductor layer, and a ratio of a luminescent area of the light emitting Layer with respect to an area of the first major surface of the substrate being set to equal to or smaller than 0.25.

Semiconductor light emitting device capable of increasing luminous efficiency under a low applied current

A light-emitting element, a light-emitting element unit and a light-emitting element package are provided, which are each reduced in reflection loss and intra-film light absorption by suppressing multiple light reflection in a transparent electrode layer and hence have higher luminance. The light-emitting elementincludes a substrate, an n-type nitride semiconductor layer, a light-emitting layer, a p-type nitride semiconductor layer, a transparent electrode layerand a reflective electrode layer, and the transparent electrode layerhas a thickness T satisfying the following expression (1): wherein &#x3bb; is the light-emitting wavelength of the light-emitting element, and n is the refractive index of the transparent electrode layer

Light-emitting element

A light emitting element unit according to the present invention includes a semiconductor light emitting element that has a surface, a back surface, and a side surface, where the surface or the back surface is a light extracting surface from which light generated inside is emitted, a submount which has a bottom wall and a side wall, has a recess portion defined by the bottom wall and the side wall, and supports the semiconductor light emitting element by the bottom wall in a position in which the light extracting surface is directed upward at the recess portion, and has an inclined surface on the side wall, inclined at a predetermined angle with respect to the bottom wall so as to face the side surface of the semiconductor light emitting element, and a light reflecting film formed on the inclined surface of the submount.

Light emitting element unit and method for manufacturing the same, light emitting element package and illuminating device

The light emitting deviceincludes a substrate, and an n-type conductive type semiconductor layer, a light emitting layerand a p-type conductive type semiconductor layerlaminated in series on a surfaceA of the substrate. The light emitting layer, the p-type conductive type semiconductor layer, and a portion of the n-type conductive type semiconductor layerexcluding the vicinity of the peripheral portion compose a semiconductor laminate structure portion. A p-side transparent electrode layeris formed on a surface of the p-type conductive type semiconductor layer. The p-side transparent electrodecovers a substantially whole area of a predetermined current injection regionon a surface of the p-type conductive type semiconductor layer. A p-side electrodeis formed on a surface of the p-side transparent electrode layer. A plurality of concave portions, which penetrate the p-side transparent electrode layerand enter the semiconductor laminate structure portion, are formed on a surface of the p-side transparent electrode layer

Light emitting device

A light emitting device includes a first conductive-type semiconductor layer laminated on a substrate; a light emitting layer laminated on the first conductive-type semiconductor layer; a second conductive-type semiconductor layer laminated on the light emitting layer; a first ITO layer laminated at a side of the first conductive-type semiconductor layer opposite to the substrate; a second ITO layer laminated at a side of the second conductive-type semiconductor layer opposite to the substrate; a first metal layer laminated on the first ITO layer; and a second metal layer laminated on the second ITO layer. The first and second metal layers have the same structure and each includes a lower metal layer which contacts a corresponding ITO layer of the first ITO layer and the second ITO layer; and an upper metal layer laminated on the lower metal layer, the upper metal layer being thicker than the lower metal layer.

A nitride based semiconductor device includes: an n-type cladding layer; an n-type GaN based guide layer placed on the n-type cladding layer; an active layer placed on the n-type GaN based guide layer; a p-type GaN based guide layer placed on the active layer; an electron block layer placed on the p-type GaN based guide layer; a stress relaxation layer placed on the electron block layer; and a p-type cladding layer placed on the stress relaxation layer, and the nitride based semiconductor device alleviates the stress occurred under the influence of the electron block layer, does not affect light distribution by the electron block layer, reduces threshold current, can suppress the degradation of reliability, can suppress degradation of the emitting end surface of the laser beam, can improve the far field pattern, and is long lasting, and fabrication method of the device is also provided.

Growing community of inventors

Kyoto, Japan

Takao Fujimori