Kabushiki Kaisha Toshiba

Gold Industries Co., Ltd.

Takao Emoto

Hisayoshi Kunii

Hiroshi Matsumoto

Shinjiro Kojima

Kentaro Murata

Toshihiro Kato

Noriho Matsuzoe

Takeo Shiomi

A tray (1) has an upper surface (3) an upper surface provided with a plurality or pockets (10) for containing parts (50) in a regular, longitudinal arrangement at a predetermined pitch in a single row. The tray (1) has a pair of longitudinal first side surfaces (6A, 6B), and teeth (30) are arranged at equal intervals on the first side surfaces (6A, 6B). Pins (35) driven by a linear driving mechanism are fitted in grooves (38) between the adjacent teeth (30) to feed the tray (1) accurately in the longitudinal direction. A tray assembly of a desired capacity can be formed by combining a necessary number of the trays (1) in a transverse arrangement by engaging the teeth (30) of the tray (1) with the grooves (38) of the adjacent tray (1).

Tray for containing parts for storage and transportation

A parts transporting tray (1) has a rectangular body, a plurality of parts receiving pits (6) formed in the upper face of the body, rows of detention means (2) each formed along one of perimeters of the body such that the adjacent trays can engage one with another, and a locking means (5) for keeping engaged the detention means of the adjacent trays. Each row consists of an upper and lower series of recesses (3) and protrusions (4) alternating one another at a constant pitch and being of a half thickness of the body. The protrusions on one perimeter are staggered with respect to those on the other perimeter, and each protrusion having a hooking portion (4a) facing transverse sides of the tray's body. The protrusions on one tray can loosely fit in the recesses on the other tray, and the trays are caused to slide relatively so that the protrusions on the neighboring trays engage with the recesses when a desired number of the trays are disintegratively connected one to another.

Parts transporting tray

According to this invention, a semiconductor chip incorporating a power control element is mounted on a heat dissipation member by a conductive solder, and lead members electrically connected to terminals extending from the semiconductor chip are arranged to have a surface level almost equal to that of the heat dissipation member. A main body structure including the semiconductor chip and the members is sealed by a sealing plastic body. A plastic table integrated with the sealing plastic body projects and is formed at a position corresponding to a lower side of outer leads which extends from the heat dissipation and lead members and is extracted from the sealing plastic body, and the outer leads are bent upward at a position corresponding to a position of the plastic table. The sealing plastic body is mounted on an external mounting member having a heat dissipation function.

Plastic molded type power semiconductor device

A packaged semiconductor device having a semiconductor chip mounted on a bed part, a first molded layer which seals the bed part and the semiconductor chip such that the back of the bed part is exposed, a heat sink under the exposed back of the bed part and with a prescribed distance between it and the back of the bed part a second molded layer which is formed such that it covers the outside of the heat sink and the first molded layer, and also fills the gap between the exposed surface of the bed part and the heat sink, and leads which are disposed such that they pass through the second molded layer and their ends are in the first molded layer, and which are connected via bonding wires to the internal terminals of the semiconductor chip.

Recessed thermally conductive packaged semiconductor devices

A 3-phase bridge converting circuit module having six switches, leads connected to the control input terminal of each switch, a lead connected to one terminal of each of the first to third switches, three AC phase leads connected to another terminal of each of the first to third switches, the fourth to sixth switches each connected to one of the AC phase leads, and a lead connected to other terminals of the fourth to sixth switches. A SIP type package seals the inner lead sections of the leads and the six switches. The control leads of the fourth to sixth switches and the lead connected to the other terminals of the fourth to sixth switches are arranged adjacent to one another or a pair of the control lead for the first switch and the first AC phase lead, a pair of the control lead for the second switch and the second AC phase lead, and a pair of the control lead for the third switch and the third AC phase lead are arranged adjacent to one another.

3-phase bridge converting circuit module

This invention relates to high breakdown voltage semiconductor devices and consists in a semiconductor device formed with a highly doped impurity region of the same conductive type as the semiconductor substrate, wherein the highly doped impurity region projects by a prescribed amount opposite a first impurity region and is formed at the back face of the semiconductor substrate, its projecting width T being in the same position as the middle of the first impurity region and being such as to satisfy t1.ltorsim.T.ltorsim.t1+2W0, where t1 is the width of the first impurity region, and W0 is the separtion in the depth direction between the first impurity region and the highly doped impurity region.

Growing community of inventors

Yokosuka, Japan

Takao Emoto