Kyocera Corporation

National Institute for Materials Science

Takanori Yasuda

Kyohei Kobayashi

Hisashi Sakai

Shinichi Abe

Isamu Akasaki

Hiroshi Amano

Satoshi Kamiyama

Genki Yoshikawa

Kota Shiba

Gaku Imamura

Masaru Nagata

Toshiya Matsuda

Ryo Ueno

The invention provides: a gas sensor device that is capable of removing a component adsorbed on a gas sensor by relatively simple means and easily restoring a signal baseline of the gas sensor to a constant state; and a method for removing a gas component. The gas sensor device according to an embodiment of the invention includes a gas sensor and cleaning means that contains a liquid for cleaning the gas sensor. The gas sensor includes a sensor main body that is capable of detecting a characteristic parameter of a component present in a gas phase or a liquid phase, and a sensitive membrane that is coated on a surface of the sensor main body and is durable against the liquid.

Gas sensor device and method for removing gas component

A stress sensor comprises: a diaphragm; an intermediate layer disposed on a surface of the diaphragm; a sensitive membrane disposed on the intermediate layer; and a piezoresistive element disposed in a region of the diaphragm in contact with an outer edge of the intermediate layer.

Stress sensor

A semiconductor apparatus includes a substrate made of a diboride single crystal expressed by a chemical formula XB, in which X includes at least one of Ti, Zr, Nb and Hf, a semiconductor buffer layer formed on a principal surface of the substrate and made of AlGaN (0&#x3c;y&#x2266;1), and a nitride semiconductor layer which is formed on the semiconductor buffer layer and which includes at least one kind or plural kinds selected from among 13 group elements and As.

Semiconductor apparatus, method for growing nitride semiconductor and method for producing semiconductor apparatus

Growing community of inventors

Kyoto, Japan

Takanori Yasuda